EPA025A EXCELICS | Alldatasheet

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Technical content

High Efficiency Heterojunction Power FET

  • +22.5dBm TYPICAL OUTPUT POWER
  • 11.0dB TYPICAL POWER GAIN AT 18 GHz
  • TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12 GHz
  • 0.3 X 250 MICRON RECESSED “MUSHR OOM” GATE
  • Si3N 4 PASSIVATION
  • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
  • Idss SORTED IN 5 mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1dB Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz 21.0 22.5 22.5 dBm G 1dB Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz 12.0 13.5 11.0 dB PAE Gain at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz NF Noise Figure f=12GHz Vds=2V, Ids=15mA 0.85 dB Ga Associated Gain f=12GHz Vds=2V, Ids=15mA 11.0 dB Idss Saturated Drain Current Vds=3V, Vgs=0V 40 75 105 mA Gm Transconductance Vds=3V, Vgs=0V 50 80 mS Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0 -2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -11 -15 V BVgs Source Breakdown Voltage Igs=1.0mA -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 155 oC/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 90mA Igsf Forward Gate Current 12mA 2mA Pin Input Power 19dBm @3dB Compression Tch Channel Temperature 175 oC 150 oC Tstg Storage Temperature -65/175 oC -65/150 oC Pt Total Power Dissipation 880mW 730mW Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com Chip Thickness: 75 ± 13 microns All Dimensions In Microns /G18/G13 /G17/G1B /G18/G13 /G17/G13 /G18/G1C /G1A/G1B /G14/G13/G17 /G17/G15/G13 /G15/G19/G13 /G1C/G13 /G27/G27 /G2A /G2A /G36/G36

High Efficiency Heterojunction Pow er FET S-PARA M ETERS 8V, 1/2 Idss (GH z) M A G A NG M A G A NG M A G A N G M A G A NG (GH z) M A G A NG M A G A NG M A G A NG M A G A NG N ote: T he data included 0.7 mils diame ter Au bonding wires 2 gate w ires, 15 m ils each; 2 drain w ires, 20 m ils each; 4 source w ires, 7 m ils each.

High Efficiency Heterojunction Pow er FET S-PARA M ETERS 2V , 15m A G H z M ag Ang M ag Ang M ag Ang M ag Ang G H z M ag Ang M ag Ang M ag Ang M ag Ang EP A025A Noise Parameters Vds=2V, Ids=15m A Freq G am m a Opt N fm in (GHz) (MAG) (ANG) (dB) Rn/50 2 0 .82 17 0.37 0.57 4 0 .8 36 0.46 0.51 6 0 .78 49 0.56 0.49 8 0 .76 63 0.64 0.44 10 0 .73 79 0.76 0.39 12 0 .71 94 0.88 0.35 14 0 .69 103 1.08 0.31 16 0 .68 118 1.31 0.26 18 0 .68 131 1.51 0.19 20 0 .67 142 1.65 0.14 22 0 .66 149 1.88 0.12 24 0 .64 162 2.05 0.076 26 0 .62 172 2.29 0.064