EPA018BV-70SC EXCELICS | Alldatasheet

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ISSUED 01/31/2006 High Efficiency Heterojunction Power FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised January 2006

FEATURES

  • None-Hermetic Low Cost Ceramic 70mil Package
  • +20.0 dBm Output Power at 1dB Compression
  • 11.0 dB Power Gain at 18GHz
  • Typical 0.75 dB Noise Figure and 12.5 dB Associated Gain at 12GHz
  • 0.3 x 180 Micron Recessed “Mushroom” Gate
  • Si 3N4 Passivation
  • Advanced Epitaxial Heterojunction Profile Provides Extra High Power Efficiency, and High Reliability ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL PARAMETERS/TEST CONDITIONS 1 MIN TYP MAX UNITS P1dB Output Power at 1dB Compression f = 12GHz VDS = 6V, IDS ≈ 50% IDSS f = 18GHz 18.5 20.0 20.0 dBm G1dB Gain at 1dB Compression f = 12GHz VDS = 6V, IDS ≈ 50% IDSS f = 18GHz 12.0 12 dB PAE Power Added Efficiency at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS f = 12GHz 45 % NF Noise Figure VDS = 2V, IDS = 15mA f = 12GHz 0.75 dB GA Associate Gain VDS = 2V, IDS = 15mA f = 12GHz 12.5 dB IDSS Saturated Drain Current V DS = 3 V, VGS = 0 V 40 55 90 mA GM Transconductance V DS = 3 V, VGS = 0 V 35 60 mS VP Pinch-off Voltage V DS = 3 V, IDS = 1.0 mA -1.0 -2.5 V BVGD Drain Breakdown Voltage I GD = 1.0mA -9 -15 V BVGS Source Breakdown Voltage I GS = 1.0mA -6 -14 V RTH Thermal Resistance 480* oC/W |S21| Insersion Gain in dB VDS = 6V, IDS ≈ 50% IDSS f = 24GHz 2.5 dB Notes: * Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 6 V VGS Gate to Source Voltage -3 V IDS Drain Current 40 mA IGSF Forward Gate Current 1.5 mA PIN Input Power @ 3dB compression PT Total Power Dissipation 240 mW TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.