EPA018B EXCELICS | Alldatasheet

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ISSUED 11/01/2007 High Efficiency Heterojunction Power FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 Chip Thickness: 75 ± 13 micron All Dimensions in Microns

FEATURES

  • VERY HIGH fmax: 120GHz
  • +20.0dBm TYPICAL OUTPUT POWER
  • 13.0dB TYPICAL POWER GAIN AT 18 GHz
  • TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz
  • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
  • Si 3N4 PASSIVATION
  • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
  • Idss SORTED IN 5 mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL PARAMETERS/TEST CONDITIONS 1 MIN TYP MAX UNITS P1dB Output Power at 1dB Compression f = 12GHz VDS = 6 V, IDS ≈ 50% Idss f = 18GHz 18.0 20.0* 20.0* dBm G1dB Gain at 1dB Compression f =12GHz VDS = 6 V, IDS ≈ 50% Idss f = 18GHz 13.0 14.5 13.0 dB PAE Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss f=12Ghz 48 % NF Noise Figure, f = 12GHz VDS = 2 V, IDS ≈ 15 mA 0.75 dB Ga Associated Gain, f = 12GHz VDS = 2 V, IDS ≈ 15 mA 12.5 dB IDSS Saturated Drain Current VDS =3 V, VGS = 0 V 30 55 80 mA GM Transconductance VDS =3 V, VGS = 0 V 35 60 mS VP Pinch-off Voltage VDS = 3 V, IDS = 1.0 mA -1.0 -2.5 V BVGD Drain Breakdown Voltage I GD = 0.5mA -9 -15 V BVGS Source Breakdown Voltage IGS = 0.5mA -7 -14 V RTH Thermal Resistance (Au-Sn Eutectic Attach) 185 oC/W *P1dB = 21.5dBm can be obtained with 8v/50% Idss bias. Consult factory for wafer selection. MAXIMUM RATINGS AT 25°C SYMBOL CHARACTERISTIC ABSOLUTE 1 CONTINUOUS 2 Vds Drain to Source Voltage 12V 6 V VGS Gate to Source Voltage -8V - 3 V Ids Drain Current Idss Idss IGSF Forward Gate Current 9mA 1.5 mA PIN Input Power 16dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C PT Total Power Dissipation 740mW 625mW Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.

ISSUED 11/01/2007 High Efficiency Heterojunction Power FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 S-PARAMETERS 6V, ½ IDSS 2V, 15mA - S11 - - S21 - - S12 - - S22 - - S11 - - S21 - - S12 - - S22 - FREQ (GHz) MAG ANG MAG ANG MAG ANG MAG ANG FREQ (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wire, 15 mils each; 1 drain wire, 20 mils each; 6 source wires, 8 mils each.

ISSUED 11/01/2007 High Efficiency Heterojunction Power FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.