EC103D1 KERSEMI | Alldatasheet

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Technical content

  1. Description Very sensitive gate thyristor intended to be interfaced directly to low power gate trigger circuits, with very low drive current capability. Product availability: EC103D1 in SOT54 (TO-92). 2. Features ■ Blocking voltage to 400 V ■ On-state RMS current to 0.8 A ■ Ultra low gate trigger current ■ Low cost package. 3. Applications ■ Earth leakage circuit breakers ■ Solid state relays ■ General purpose switching. 4. Pinning information Table 1: Pinning - SOT54 (TO-92), simplified outline and symbol Pin

Description

Simplified outline Symbol 1 anode (a) SOT54 (TO-92) 2 gate (g) 3 cathode (k) MSB033 MBL308 www.kersemi.com

  1. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V DRM repetitive peak off-state voltage 25°C ≤ T j ≤ 125 °C - 400 V V RRM repetitive peak reverse voltage - 400 V I T(RMS) on-state current (RMS value) - 0.8 A I TSM non-repetitive peak on-state current - 8.0 A Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V DRM repetitive peak off-state voltage 25°C ≤ T j ≤ 125 °C - 400 V V RRM repetitive peak reverse voltage - 400 V I T(AV) average on-state current half sine wave; T lead ≤ 83 °C - 0.5 A I T(RMS) on-state current (RMS value) all conduction angles - 0.8 A I TSM non-repetitive peak on-state current half sine wave; T j = 25°C prior to surge t=1 0m s - 8 . 0 A t = 8.3 ms - 9.0 A I tI t for fusing t = 10 ms - 0.32 A s dI T /dt rate of rise on-state current I TM = 2.0 A; I G = 10 mA; dI G /dt = 100 mA/µs -5 0 A / µs I GM peak gate current - 1.0 Α V GM peak gate voltage - 5.0 V V RGM peak reverse gate voltage - 5.0 V P GM peak gate power - 2.0 W P G(AV) average gate power over any 20 ms period - 0.1 W T stg storage temperature −40 +150 °C T j operating junction temperature - +125 °C www.kersemi.com

α = conduction angle n = number of cycles at f = 50 Hz Fig 1. Maximum on-state dissipation as a function of average on-state current; typical values. Fig 2. Maximum permissible non-repetitive peak on-state current as a function of number of cycles for sinusoidal currents; typical values. f = 50 Hz; T lead ≤ 83°C. Fig 3. Maximum permissible on-state current (RMS value) as a function of lead temperature; typical values. Fig 4. Maximum permissible repetitive on-state current (RMS value) as a function of surge duration for sinusoidal currents; typical values. 0.2 0.4 0.6 0 0.2 0.4 0.6 α = 180 ο α = 120 ο α = 90 ο α = 60 ο α = 30 ο Ptot (W) IT(AV) (A) 003aaa111 α n ITSM (A) 1 10 102 103 003aaa110 IT(RMS) (A) 1.0 0.8 0.6 0.4 0.2 Tlead (οC) -50 0 50 100 150 003aaa116 IT(RMS) (A) 1.0 2.0 1 1010-110-2 tsurge (s) 003aaa117 1.5 0.5 www.kersemi.com

  1. Thermal characteristics

7.1 Transient thermal impedance

Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit R th(j-lead) thermal resistance from junction to lead 80 K/W R th(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; lead length = 4 mm

150 K/W

Fig 5. Transient thermal impedance from junction to lead as a function of pulse duration. Zth(j-lead) (K/W) 10 10 tp (s) 003aaa108 tp t PD www.kersemi.com

  1. Characteristics Table 5: Characteristics T j =2 5 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics I GT gate trigger current V D = 12 V; I T = 0.1 A; gate open circuit -3 1 2 µA I L latching current V D = 12 V; I GT = 0.5 mA; R GK =1k Ω -2 6 m A I H holding current - 2 5 mA V T on-state voltage I T = 1.0 A - 1.2 1.35 V V GT gate trigger voltage I T = 10 mA; gate open circuit V D = 12 V - 0.5 0.8 V V D DRM (max) ; T j I D off-state current V D DRM (max) ; V R RRM (max) T j = 125°C; R GK =1k Ω - 50 100 µA I R reverse current - 50 100 µA Dynamic characteristics dV D /dt rate of rise of off-state voltage V D = 0.67 V DRM(max) case = 125°C; exponential waveform; R GK =1k Ω -2 5- V / µs t gt gate controlled turn-on time I TM = 2.0 A; V D DRM(max) I G = 10 mA; dI G /dt = 0.1 A /µs -2 - µs t q commutated turn-off time V D = 0.67 V DRM(max) ; T j = 125°C; I TM = 1.6 A; V R =3 5V ; dI TM / d t=3 0A /µs; dV D / d t=2V /µs; R GK =1k Ω - 100 - µs www.kersemi.com

Fig 6. On-state current as a function of on-state voltage; typical and maximum values. Fig 7. Normalized latching current as a function of junction temperature; typical values. Fig 8. Normalized gate trigger voltage as a function of junction temperature; typical values. Fig 9. Normalized gate trigger current as a function of junction temperature; typical values. 125 οC typ 125 οC max IT (A) VT (V) 003aaa109 3.0 2.0 1.0 0.4 0.8 1.2 1.6 25 οC typ 2.0 1.6 1.2 0.8 0.4 -50 0 50 100 150 a Tj (οC) 003aaa114 a I LT j() I L2 5C 0-50 50 100 150 1.6 1.2 0.8 0.4 a Tj (οC) 003aaa112 2.0 1.6 1.2 0.8 0.4 0 50 100 150-50 a Tj (οC) 003aaa113 a V GT Tj() V GT 25 C GT Tj() I GT 25 C www.kersemi.com

  1. Package outline Fig 10. SOT54 (TO-92). UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 (1) 2.5 0.66 0.56 DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 TO-92 SC-43 97-02-28 A L 0 2.5 5 mm scale b c D b d E Plastic single-ended leaded (through hole) package; 3 leads SOT54 e www.kersemi.com
  1. Revision history Table 6: Revision history Rev Date CPCN

01 20011101 - Product data; initial version www.kersemi.com