DTW2070 DINTEK | Alldatasheet

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Technical content

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition
  • Surface Mount
  • Low-Profile Through-Hole
  • Available in Tape and Reel
  • Dynamic dV/dt Rating
  • 150 °C Operating Temperature
  • F a s t S w i t c h i n g
  • Fully Avalanche Rated
  • Compliant to RoHS Directive 2002/95/EC Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J g = 25 , I AS = 18 A (see fig. 12). c. I SD 20 A, dI/dt  150 A/μs, V DD  V DS , T J  150 °C. d. 1.6 mm from case. PRODUCT SUMMARY V DS (V) 200 R DS(on) ()V GS = 10 V 0.09 Q g (Max.) (nC) 70 Q gs (nC) 13 Q gd (nC) 39 Configuration Single N-Channel MOSFET G D S D PAK (TO-263) G D S I PAK (TO-262) ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS

200 V Gate-Source Voltage V

± 20 Continuous Drain Current V GS at 10 V T C = 25 °C I D AT C = 100 °C 13 Pulsed Drain Current a, e I DM Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energy b, e E AS 580 mJ Avalanche Current a I AR 20 A Repetiitive Avalanche Energy a E AR 13 mJ Maximum Power Dissipation T C = 25 °C P D

3.1 W T

A = 25 °C 130 Peak Diode Recovery dV/dt c, e dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300 d * Pb containing terminations are not RoHS compliant, exemptions may apply www.din-tek.jp DTW2070

a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Uses IRF640/SiHF640 data and test conditions. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, Steady-State) a R thJA -4 0 °C/W Maximum Junction-to-Case (Drain) R thJC -1 .0 SPECIFICATIONS (T J = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 μA 200 - - V V DS Temperature Coefficient V DS J Reference to 25 °C, I D = 1 mA c -0 .2 9- V / ° C Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 μA 2.0 - 4.0 V Gate-Source Leakage I GSS V GS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current I DSS V DS = 200 V, V GS = 0 V - - 25 μA V DS = 160 V, V GS = 0 V, T J = 125 °C - - 250 Drain-Source On-State Resistance R DS(on) V GS = 10 V I D = 11 A b - - 0.09  Forward Transconductance g fs V DS = 50 V, I D = 11 A d 6.7 - - S Dynamic Input Capacitance C iss V GS = 0 V, V DS = 25 V, f = 1.0 MHz, see fig. 5 d - 1300 - pFOutput Capacitance C oss - 430 - Reverse Transfer Capacitance C rss - 130 - Total Gate Charge Q g V GS = 10 V I D = 20 A, V DS = 160 V, see fig. 6 and 13 b, c -- 7 0 nC Gate-Source Charge Q gs -- 13 Gate-Drain Charge Q gd -- 39 Turn-On Delay Time t d(on) V DD = 100 V, I D = 20 A, R g = 9.1 , R D = 5.4 , see fig. 10 b, c -1 4 - ns Rise Time t r -5 1 - Turn-Off Delay Time t d(off) -4 5 - Fall Time t f -3 6 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode -- 2 0 A Pulsed Diode Forward Current a I SM -- 72 Body Diode Voltage V SD T J = 25 °C, I S = 20 A, V GS = 0 V b -- 2. 0 V Body Diode Reverse Recovery Time t rr T J = 25 °C, I F = 20 A, dI/dt = 100 A/μs b, c - 300 610 ns Body Diode Reverse Recovery Charge Q rr -3 .4 7 . 1 μ C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D S D G www.din-tek.jp DTW2070

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, T J = 25 °C Fig. 2 - Typical Output Characteristics, T J = 175 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 91037_01 Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 25 °C 4.5 V V DS , Drain-to-Source Voltage (V) I D , Drain Current (A) V DS, Drain-to-Source Voltage (V) I D , Drain Current (A) Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 150 °C 91037_02 4.5 V 20 µs Pulse Width V DS = 50 V I D , Drain Current (A) V GS, Gate-to-Source Voltage (V) 5 6 789 1 04 C 150 C 91037_03 I D = 20 A V GS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0 2.5 T Junction Temperature (°C) R DS(on) , Drain-to-Source On Resistance (Normalized) 91037_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 www.din-tek.jp DTW2070

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 3000 2500 2000 1500 500 1000 Capacitance (pF) V DS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = C gs + C gd , C ds Shorted C rss = C gd C oss = C ds + C gd 91037_05 Q G , Total Gate Charge (nC) V GS , Gate-to-Source Voltage (V) 0 15 75604530 V DS = 40 V V DS = 100 V For test circuit see figure 13 V DS = 160 V 91037_06 I D = 20 A V SD , Source-to-Drain Voltage (V) I SD , Reverse Drain Current (A) C 150 C V GS = 0 V 91037_07 1.50 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) V DS , Drain-to-Source Voltage (V) I D , Drain Current (A) T C = 25 °C T J = 150 °C Single Pulse 0.1 0.1 22 5 91037_08 www.din-tek.jp DTW2070

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case I D , Drain Current (A) T C , Case Temperature (°C) 25 1501251007550 91037_09 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % R D V GS R g D.U.T. 10 V V DS V DD V DS 90 % 10 % V GS t d(on) t r t d(off) t f 0.1 0.1 1 10 P DM t t t , Rectangular Pulse Duration (s) Thermal Response (Z thJC Notes: 1. Duty Factor, D = t 2. Peak T j = P DM x Z thJC + T C Single Pulse (Thermal Response) 0 − 0.5 0.2 0.1 0.05 0.02 0.01 91037_11 www.din-tek.jp DTW2070

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit A R g I AS 0.01 Ωt p D.U.T. LV DS - V DD Driver 15 V 20 V I AS V DS t p 1400 400 600 800 1000 1200 25 1501251007550 Starting T J , Junction Temperature (°C) E AS , Single Pulse Energy (mJ) Bottom Top I D 8.0 A 11.0 A 20.0 A V DD = 50 V 91037_12c 200 Q GS Q GD Q G V G Charge 10 V D.U.T. 3 mA V GS V DS I G I D 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. www.din-tek.jp DTW2070

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current V GS = 10 V a I SD Driver gate drive D.U.T. l SD waveform D.U.T. V DS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit V DD  dV/dt controlled by R g  Driver same type as D.U.T.  I SD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer R g Note a. V GS = 5 V for logic level devices V DD www.din-tek.jp DTW2070

TO-263AB (HIGH VOLTAGE) Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 1 3 D B B E H BA Detail A A A c A 2 x e 2 x b2 2 x b

0.010 A B

± 0.004 B M Base metal Plating b1, b3 (b, b2) c1(c) Section B - B and C - C Scale: none Lead tip (Datum A) C C B B View A - A E B H Seating plane Gauge plane 0° to 8° Detail “A” Rotated 90° CW scale 8:1 L3 A1L4L MILLIMETERS INCHES MILLIMETERS INCHES ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 www.din-tek.jp DTW2070

RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead 0.635 (16.129) Recommended Minimum Pads Dimensions in Inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) www.din-tek.jp DTW2070

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertech nology, Inc. hereby certifies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. www.din-tek.jp DTW2070