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Technical content

www.GD\\VHPLMS Dual N-Channel 20 V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition  TrenchFET Power MOSFET  100 % R g Tested  Typical ESD Protection 2100 V HBM  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Load Switch for Portable Applications Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. PRODUCT SUMMARY V DS (V) R DS(on) (Ω)I D (A) a Q g (Typ.) 0.198 at V GS = 4.5 V 1.3 a 0.9 nC0.225 at V GS = 2.5 V 1.3 a 0.263 at V GS = 1.8 V 1.3 a SOT-363 SC-70 (6-LEADS) Top View S G D D G S D S G D S G ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 8 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D 1.3 a A T C = 70 °C 1.3 a T A = 25 °C 1.3 a, b, c T A = 70 °C 1.2 b, c Pulsed Drain Current I DM Continuous Source-Drain Diode Current T C = 25 °C I S T A = 25 °C 0.61 b, c Maximum Power Dissipation T C = 25 °C P D 1.25 W T C = 70 °C 0.8 T A = 25 °C 0.74 b, c T A = 70 °C 0.47 b, c Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symb ol Typical Maximum Unit Maximum Junction-to-Ambient b, d t ≤ 5 s R thJA 130 170 °C/W Maximum Junction-to-Foot (Drain) Steady State R thJF 80 100 DTS www.daysemi.jp

www.GD\\VHPLMS Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (T J = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 µA 20 V V DS Temperature Coefficient ΔV DS J I D = 250 µA mV/°C V GS(th) Temperature Coefficient ΔV GS(th) J - 2.3 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 0.4 1 V Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 8 V ± 25 µA V DS = 0 V, V GS = ± 4.5 V 1 Zero Gate Voltage Drain Current I DSS V DS = 20 V, V GS = 0 V 1 µA V DS = 20 V, V GS = 0 V, T J = 55 °C 10 On-State Drain Current a I D(on) V DS ≤ 5 V, V GS = 4.5 V 4 A Drain-Source On-State Resistance a R DS(on) V GS = 4.5 V, I D = 1 A 0.165 0.198 ΩV GS = 2.5 V, I D = 1 A 0.187 0.225 V GS = 1.8 V, I D = 0.2 A 0.210 0.263 Forward Transconductance a g fs V DS = 4 V, I D = 1.5 A 4 S Dynamic b Total Gate Charge Q g V DS = 10 V, V GS = 8 V, I D = 1.5 A 1.6 2.5 nC V DS = 10 V, V GS = 4.5 V, I D = 1.5 A 0.9 1.8 Gate-Source Charge Q gs 0.1 Gate-Drain Charge Q gd 0.2 Gate Resistance R g f = 1 MHz 0.4 1.9 3.8 k Ω Tur n-On Delay Time t d(on) V DD = 10 V, R L = 8.3 Ω I D ≅ 1.2 A, V GEN = 4.5 V, R g = 1 Ω 43 65 ns Rise Time t r 80 120 Turn-Off Delay Time t d(off) 480 720 Fall Time t f 220 330 Turn-on Delay Time t d(on) V DD = 10 V, R L = 8.3 Ω I D ≅ 1.2 A, V GEN = 8 V, R g = 1 Ω 22 33 Rise Time tr 46 70 Turn-Off Delay Time t d(off) 645 968 Fall Time tr 215 323 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C 1 A Pulse Diode Forward Current I SM Body Diode Voltage V SD I S = 1.2 A, V GS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time t rr I F = 1.2 A, dI/dt = 100 A/µs, T J = 25 °C 91 8 n s Body Diode Reverse Recovery Charge Q rr 24 nC Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b DTS www.daysemi.jp

www.GD\\VHPLMS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Current vs. Gate-to-Source Voltage Output Characteristics On-Resistance vs. Drain Current V GS - Gate-to-Source Voltage (V) I G - Gate Current (mA) 0.1 0.2 0.3 0.4 0.5 0369 12 1 5 T J = 25 °C V GS =5Vt hr u2V V GS =1 .5V V GS =1V V DS - Drain-to-Source Voltage (V) I D - Drain Current (A) 0.13 0.16 0.19 0.22 0.25 012 34 V GS =1 .8V V GS =2 .5V V GS =4 .5V R DS(on) - On-Resistance (Ω) I D - Drain Current (A) Gate Current vs. Gate-to-Source Voltage Transfer Characteristics Gate Charge -10 0369 12 1 5 V GS - Gate-to-Source Voltage (V) I G - Gate Current (A) T J = 150 °C T J = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 T C = 125 °C T C = 25 °C T C = - 55 °C V GS - Gate-to-Source Voltage (V) I D - Drain Current (A) I D =1 .5A V DS =1 0V V DS =1 6V V DS =5V Q g - Total Gate Charge (nC) V GS - Gate-to-Source Voltage (V) DTS www.daysemi.jp

www.GD\\VHPLMS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 I D =1A V GS =4 .5V V GS =2 .5V T J - Junction Temperature (°C) (Normalized)R DS(on) - On-Resistance 0.0 0.1 0.2 0.3 0.4 123 45 T J = 25 °C T J = 125 °C I D =1A R DS(on) - On-Resistance (Ω) V GS - Gate-to-Source Voltage (V) Power (W) Time (s) 0 0 611 00.10.01 100 Source-Drain Diode Forward Voltage Threshold Voltage Safe Operating Area, Junction-to-Ambient 0.1 T J = 25 °C T J = 150 °C I S - Source Current (A) V SD - Source-to-Drain Voltage (V) 0.20 0.35 0.50 0.65 0.80 - 50 - 25 0 25 50 75 100 125 150 I D = 250 μA V GS(th) (V) T J - Temperature (°C) 0.1 0.1 1 10 T A = 25 °C Single Pulse 1m s 0.01 1s ,1 0s DC 100 Limited by R DS(on)* 10 ms 100 ms 100 μs BVDSS Limited V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified I D - Drain Current (A) DTS www.daysemi.jp

www.GD\\VHPLMS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.6 1.2 1.8 2.4 0 25 50 75 100 125 150 Package Limited T C - Case Temperature (°C) I D - Drain Current (A) Power, Junction-to-Foot 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 T F - Case Temperature (°C) Power (W) Power, Junction-to-Ambient 0.00 0.15 0.30 0.45 0.60 0.75 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power (W) DTS www.daysemi.jp

www.GD\\VHPLMS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 0 0 60 1110 100 0.1 0.01 0.2 0.1 0.05 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 170 °C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM 0.02 Normalized Thermal Transient Impedance, Junction-to-Foot 0 1110 0.1 0.01 0.2 0.1 0.05 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.02 DTS www.daysemi.jp

L c E E e D e A A A -A- b -B- 65 4 www. GD\\VHPLMS /C0083/C0067/C0262/C0055/C0048/C0058/C0032/C0032/C0032/C0054/C0262/C0076/C0069/C0065/C0068/C0083 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083 /C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Nom Max Min Nom Max A 0.90 1.10 0.035 0.043 A 0.10 0.004 A 0.80 1.00 0.031 0.039 b 0.15 0.30 0.006 0.012 c 0.10 0.25 0.004 0.010 D 1.80 2.00 2.20 0.071 0.079 0.087 E 1.80 2.10 2.40 0.071 0.083 0.094 E 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65BSC 0.026BSC e 1.20 1.30 1.40 0.047 0.051 0.055 L 0.10 0.20 0.30 0.004 0.008 0.012 7/C0095Nom 7/C0095Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550

Package Information

www.GD\\VHPLMS APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.096 (2.438) Recommended Minimum Pads Dimensions in Inches/(mm) 0.067 (1.702) 0.026 (0.648) 0.045 (1.143) 0.016 (0.406) 0.026 (0.648) 0.010 (0.241) Return to Index Return to Index Application Note

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