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N-Channel Reduced Qg, Fast Switching MOSFET

FEATURES

  • Halogen-free Acc ording to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFETs 175 °C Maximum Junction Temperature  Compliant to RoHS Directive 2002/95/EC PRODUCT SU MMARY VDS (V) RDS (on) (Ω)I D (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4. 5 V 7.2 Notes: a. Surfac e Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symb ol 10 s Steady State Unit Drain-Source Voltage VDS 60 VGate -Source Voltage VGS ± 20 Continuous D rain Current (TJ = 175 °C )a TA = 25 °C ID 8.5 6 ATA = 70 °C 7.1 5 Pulsed Drain Current IDM 40 Av alanche Current IAS 15 Single Pulse Av alanche Energy EAS 11 mJ Max imum Power Dissipationa TA = 25 °C PD 3.3 1 .7 WTA = 70 °C 2.3 1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESIST ANCE RATINGS Parameter Symb ol Typical Maximum Unit Maximum Junction-to-Ambient a t ≤ 10 s RthJA 36 45 /WSteady State 75 90 Maximum Junction-to-Foot (Drain) Steady State RthJF 17 20 N-Channel MOSFET G D S SOT-223 G D S D DT# www.daysemi.jp

tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TY PICAL CHARACTERISTICS 25 °C, unless otherwise noted S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS( th) VDS = VGS, ID = 250 µA 13 Gate-B ody Leakage IGSS VDS = 0 V , VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V , VGS = 0 V 1 µAVDS = 60 V , VGS = 0 V , TJ = 55 °C 20 On-State Drain Currenta ID(on) V DS ≥ 5 V , VGS = 10 V 40 A Drain-Source On-State Resistancea RDS( on) VGS = 1

0 V, ID =

6.0 A 0.018 0.022 Ω VGS = 10 V , ID = 6.0 A, TJ = 125 °C 0.031 0.037 VGS = 1

0 V, ID = 6

.0 A, TJ = 175 ° C 0.039 0.047 VGS = 4.5 V , ID = 5.1 A 0.025 0.031 Forward Transconductancea gfs VDS = 15 V , ID = 6.0 A 25 S Diode Forward Voltagea VSD IS = 1.

7 A, VGS

= 0 V 0.8 1.2 V Dy namicb T otal Gate Charge Qg VDS = 30 V , VGS = 10 V , ID = 6.0 A nCGate-Source Charge Qgs 3.4 Gate- Drain Charge Qgd 5.3 G ate Resistance Rg VGS = 0. 1 V, f = 5 MHz 0.5 1.4 2.4 Ω Tur n-On Delay Time td( on) VDD =

30 V, RL =

30 Ω ID ≅ 1 A, VGEN = 10 V , Rg = 6 Ω ns Rise Time tr 10 Turn-Off Delay Time td( off) 25 Fall Time tf 12 Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs 50 80 Outpu t Characteristics 0.0 VGS = 10 V thru 5 V 4 V 3 V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) T ransfer Characteristics 12345 - 55 °C 25 °C ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 150 °C DT# www.daysemi.jp

L CHARACTERISTICS 25 °C, unless otherwise noted On-R esistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 8 16 24 32 40 VGS = 4.5 V RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 10 V 04 8 12 16 20 ID = 6.0 V VDS = 30 V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) 2.0 2.5 0.00 0.5 1.0 1.5 TJ = 25 °CTJ = 175 °C IS - Source Current (A) VSD - Source-to-Drain Voltage (V) Cap acitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 200 400 600 800 1000 1200 1400 1 02 03 04 05 06 0 Crss Cos s Cis s C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 VGS = 10 V ID = 6.0 A RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 46 8 10 ID = 6.0 A VGS - Gate-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) DT# www.daysemi.jp

PICAL CHARACTERISTICS 25 °C, unless otherwise noted Th reshold Voltage - 1.2 - 0.8 - 0.4 0.0 0.4 0.8 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA VGS(th) Variance (V) TJ - T emperature (°C) Sing le Pulse Power 0.01 10000.1 Time (s) )W( r ewo P 100 No rmalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10 -2 11 0 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) evi t c e f f E d e zil a mroN t n e i s n a r T e c n a d e p mI l a m reh T Duty Cycle, D = 2. Per Unit Base = R th JA = 75 °C/W 3. T JM - TA = PDMZth JA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM No rmalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) evitc e f f E d e z i l a m r oN t n e i s n a r T ec n a d e p m I l a m r e h T DT# www.daysemi.jp

SOT-223 ( HIGH VOLTAGE) No tes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. D B 0.10 (0.004) M C M H 0.10 (0.004) M C B M 0.20 (0.008) M C A M 0.10 (0.004) M C B M 3 x B e 1 2 3 A E C A 0.08 (0.003) θ 4 x L 4 x C MILL IMETERS INCHES A 1.55 1.80 0.061 0.071 B 0.65 0.85 0.026 0.033 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 0.146 e 2.30 BSC 0.0905 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 0.287 L 0.91 - 0.036 - L1 0.061 BSC 0.0024 BSC θ - 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969

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