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Technical content
N-Channel 30-V (D-S) MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition TrenchFET ® Power MOSFET 100 % R g Test ed
APPLICATIONS
- Notebook - Netbook Load Switch Low Current DC/DC PROD UCT SUMMARY VDS (V) RD S(on) (Ω) ID (A )a Qg ( Typ.) 0.028 at VGS = 10 V 6 .8 nC0.034 at VGS =
4.5 V 6
G D S Notes: Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS 30 VGat e-Source Voltage VGS ± 20 Contin uous Drain Current (TJ = 150 ° TC = 25 °C ID A TC = 70 °C 6a TA = 25 °C 6a,b , c TA = 70 °C 5.5a, b, c Pulsed Dr ain Current IDM 30 Contin uous Source-Drain Diode Current TC = 25 °C IS 4.8 TA = 25 °C 1.9b, c Max imum Power Dissipation TC = 25 °C PD 5.7 WTC = 70 °C 3.6 TA = 25 °C 2.3b, c TA = 70 °C 1.5b, c Ope rating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Solder ing Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS P arameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient t ≤ 5 s RthJ A 45 55 °C/WMaximum Junction-to-Foot (Drain) Steady State R thJF 18 D G SD D5$ www.daysemi.jp
tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V , ID = 250 µA 30 V VDS T emperature Coefficient ΔVDS /TJ ID = 250 µA 35 mV/°CVGS( th) T emperature Coefficient ΔVGS( th)/TJ - 4. Gate-Source Threshold Voltage VGS( th) VDS = VGS , ID = 250 µ A 1.0 2.5 V Gate-Source Leakage IGSS VDS = 0 V , VGS = ±
20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 µAVDS = 30 V, VGS = 0 V , TJ = 55 °C On-State Drain Currenta ID(on) V DS ≥ 5 V , VGS = 10 V 20 A Drain-Source On-State Resistancea RDS( on) VGS = 10 V , ID = 6.8 A 0.023 0.028 ΩVGS = 4.5 V , ID = 6.2 A 0.028 0.034 Forward Transconductancea gfs VDS = 10 V , ID = 6.8 A 17 S Dy namicb Inpu t Capacitance Ciss VDS = 15 V , VGS = 0 V , f = 1 MHz 435 pFOutput Capacitance Cos s 95 Re verse Transfer Capacitance Crs s 42 T otal Gate Charge Qg VDS = 15 V , VGS = 10 V, ID = 7.8 A 81 nCVDS = 15 V , VGS = 4.5 V , ID = 7.8 A 3.8 Gate-Source Charge Qgs 1.4 Gate- Drain Charge Qgd 1.1 G ate Resistance Rg f = 1 MHz 1.5 3.2 4.5 Ω Tur n-On Delay Time td( on) VDD = 15 V , RL = 2.4 Ω ID ≅ 6.3 A, VGEN = 4.5 V , Rg = 1 Ω ns Rise Time tr 12 Turn-Off Delay Time td( off) 13 Fall Time tf 10 Tur n-On Delay Time td( on) VDD = 15 V , RL = 2.4 Ω ID ≅ 6.3 A, VGEN = 10 V , Rg = 1 Ω Rise Time tr 10 Turn-Off Delay Time td( off) 15 Fall Time tf 10 Drain -Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.2 A Pulse Diode Forward Current ISM 30 Body Diode V oltage VSD IS = 6.3 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 6.3 A, dI /dt = 100 A/µs, TJ = 25 °C 25 ns Body Diode Reverse Recovery Charge Qrr 71 2 n C Reverse Recovery Fall Time ta 9 ns Re verse Recovery Rise Time tb 6 D5$ www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted Outp ut Characteristics On Resistance vs. Drain Current Gate Charge 0.0 VGS =1 0V thru 4 V VGS =3V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D - On -Resistance (Ω)RDS( on) ID - Drain Current (A) 0.010 0.015 0.020 0.025 0.030 0.035 5 10 15 20 25 30 VGS =1 VGS =4 . 5V 024 VDS =2 ID =7 .8 A VDS =1 - Gate -to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Tran sfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 TC = 25 °C TC = 125 °C TC =- 5 5 ° C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss 100 200 300 400 500 600 5 10 15 20 25 30 Cis s Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =4 . 5V VGS =1 ID =6 .8 A TJ -J unction Temperature (°C) (Normalized) - On -ResistanceRDS(on) D5$ www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Fo rward Diode Voltage vs. Temperature Threshold Voltage 0.0 100 TJ = 25 °C TJ = 150 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS( th) TJ - Temperature (°C) On-Resistance vs . Gate-Source Voltage Single Pulse Power - On -Resistance (Ω)RDS( on) VGS - Gate-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 46 8 10 TJ = 25 °C TJ = 125 °C ID =6 .8 A P ower (W) T ime (s) 100 6001010-110-210-3 Safe Ope rating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse Limited byR DS (on)* BVDSS Limited s ms 100 ms s 100 s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS (on) is specified Drain Current (A)ID D5$ www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted * T he power dissipation P D is based on T J( max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 25 50 75 100 125 150 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) Power Derating 50 75 100 125 150 TC - Case T emperature (°C) Power (W) D5$ www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Norm alized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Nor malized Effective Transient Thermal Impedance Duty Cycle, D = 2. Per Unit Base = Rth JA = 80 °C/W TJM - TA = PDMZth JA(t) Notes: Surface Mounted PDM No rmalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Nor malized Effective Transient Thermal Impedance D5$ www.daysemi.jp
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max D A C L E H B e
Package Information
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