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N-Channel 20-V (D-S) MOSFET FE ATURES

  • Halo gen-free  Tren chFET® Power MOSFET APPLI CATIONS  Load Switches for Portable Devices No tes: a. Package limited, TC = 25 ° b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 °C/W. e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a sol dering iron is not recommended for leadless components. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A )a Qg (T yp.) 0.020 at VGS = 4.5 V 10 nC 0.025 at VGS = 2.5 V N-Channel MOSFET G D S AB SOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS 20 VGate-Sou rce Voltage VGS ± 12 Con tinuous Drain Current (TJ = 150 °C) TC = 2 5 °C ID A TC = 7 0 °C 6a TA = 25 °C 6a, b , c TA = 70 °C 6a, b , c Pulsed Drain Current IDM 30 Con tinuous Source-Drain Diode Current TC = 2 5 °C IS 5.2 TA = 25 °C 2.1b, c Maxim um Power Dissipation TC = 2 5 °C PD 6.3 WTC = 7 0 °C 4 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Oper ating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)e, f 260 THERMAL RES ISTANCE RATINGS P arameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c , d t ≤ 5 s Rth JA 40 50 °C/W Maximum Junction-to-Foot (Drain) Steady State Rth JF 15 RoHS COMPLIANT D G SD D5$ www.daysemi.jp

tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V , ID = 250 µA 20 V VDS T emperature Coefficient ΔVDS /TJ ID = 250 µA 25 mV/°CVGS( th) T emperature Coefficient ΔVGS( th)/TJ - 4. Gate-Source Threshold Voltage VGS( th) VDS = VGS , ID = 250 µ A 0.6 1.5 V Gate-Source Leakage IGSS VDS = 0 V , VGS = ±

12 V ± 100 nA

Zero Gate Voltage Drain Current IDSS VDS = 20 V , VGS = 0 V 1 µAVDS = 20 V, VGS = 0 V , TJ = 55 °C On-State Drain Currenta ID(on) V DS ≥ 5 V , VGS = 4.5 V 30 A Drain-Source On-State Resistancea RDS( on) VGS = 4.5 V , ID = 8.3 A 0.016 0.020 ΩVGS = 2.5 V , ID = 4.5 A 0.020 0.025 Forward Transconductancea gfs VDS = 10 V , ID = 8.3 A 45 S Dy namicb Inpu t Capacitance Ciss VDS = 10 V , VGS = 0 V , f = 1 MHz 1200 pFOutput Capacitance Cos s 220 Re verse Transfer Capacitance Crs s 100 T otal Gate Charge Qg VDS = 10 V , VGS = 10 V, ID = 8.3 A 22 nCVDS = 10 V , VGS = 4.5 V , ID = 8.3 A Gate-Source Charge Qgs 2.5 Gate- Drain Charge Qgd 1.7 G ate Resistance Rg f = 1 MHz 2.4 Ω Turn-on Delay Time td( on) VDD = 10 V , RL = 1.5 Ω ID ≅ 6.7 A, VGEN = 4.5 V , Rg = 1 Ω ns Rise Time tr 10 Turn-Off Delay Time td( off) 35 Fall Time tf 12 Turn-on Delay Time td( on) VDD = 10 V , RL = 1.5 Ω ID ≅ 6.7 A, VGEN = 10 V , Rg = 1 Ω Rise Time tr 12 Turn-Off Delay Time td( off) 25 Fall Time tf 10 Drain -Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 5.2 A Pulse Diode Forward Current ISM 30 Body Diode V oltage VSD IS = 6.7 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 6.7 A, dI /dt = 100 A/µs, TJ = 25 °C 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta 10 ns Re verse Recovery Rise Time tb 10 D5$ www.daysemi.jp

L CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 5 thru 2.5 V VGS = 1.5 V VGS = 2 V VGS = 1 V 0.010 0.012 0.014 0.016 0.018 0.020 0.022 0.024 6 12 18 24 30 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS =4 . 5V VGS =2 . 5V 0.026 5 10 15 20 25 ID = 8.3 A - Gate-to-Source Voltage (V) Qg - T otal Gate Charge (nC) VGS VDS = 16 V VDS = 10 V T ransfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D TC = 25 °C TC = 125 °C TC = - 55 °C Crss 300 600 900 1200 1500 5 10 15 20 Cis s VDS - Drain-to-Source Voltage (V) C - Capacitance (pF)Cos s 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction T emperature (°C) (Normalized) - On-ResistanceRDS(on) VGS = 4.5 V, 2.5 VID = 8.3 A D5$ www.daysemi.jp

PICAL CHARACTERISTICS 25 °C, unless otherwise noted So urce-Drain Diode Forward Voltage Threshold Voltage 0.0 TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 100 TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - T emperature (°C) On-Resista nce vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.010 0.020 0.030 0.040 0.050 12345 - On-Resistance (Ω)RDS(on VGS - Gate -to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 8.3 A ) W ( r e w o P Ti me (s) 1 600 0.1 0.01 0.001 10 100 Safe Operating Area, Junction-to-Ambient VDS - Drain -to-Source Voltage (V) * VGS > minimum VGS at which RDS (on) is specified 100 0.1 1 10 100 0.01 ID - Drain Current (A) 0.1 TA = 25 °C Single Pulse BVDSS Limited Limited byR DS (on)* s DC s 100 µs ms 100 ms D5$ www.daysemi.jp

L CHARACTERISTICS 25 °C, unless otherwise noted * T he power dissipation P D is based on T J( max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 2 55 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) ID - Drain Current (A) P ackage Limited Po wer Derating 50 75 100 125 150 TC - Case Temperature (°C) Power (W) D5$ www.daysemi.jp

PICAL CHARACTERISTICS 25 °C, unless otherwise noted Norm alized Thermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 1 10 600 10 -110 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) i t c e f f E d e z i l a m r o N t n e i s n a r T e v e c n a d e p m I l a m r e h T Duty Cycle, D = 2. Per Unit Base = R th JA = 80 °C/W 3. T JM - TA = PDMZth JA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM No rmalized Thermal Transient Impedance, Junction-to-Foot 10 -3 10 -2 10 10 -110 -4 0.1 0.01 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 Square Wave Pulse Duration (s) v i t c e f f E d e z i l a m r o N t n e i s n a r T e e c n a d e p m I l a m r e h T Single Pulse D5$ www.daysemi.jp

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max D A C L E H B e

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