DTS7001

DTS7001 DINTEK | Alldatasheet

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Technical content

P-Channel 60 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET Power MOSFET  High-Side Switching  Low On-Resistance: 5   Low Threshold: - 2 V (typ.)  Fast Swtiching Speed: 20 ns (typ.)  Low Input Capacitance: 20 pF (typ.)  1200 V ESD Protection  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 D rivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  Battery Operated Systems  Power Supply Converter Circuits  Solid-State Relays BENEFITS  Ease in Driving Switches  Low Offset (Error) Voltage  Low-Voltage Operation  High-Speed Circuits  Easily Driven without Buffer Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. PRODUCT SUMMARY V DS (V) R DS(on) ()V GS(th) (V) I D (mA) - 60 5 at V GS = - 10 V - 1 to - 3 - 130 ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS - 60 V Gate-Source Voltage V GS ± 20 Continuous Drain Current a T A = 25 °C I D - 130 mAT A = 100 °C - 105 Pulsed Drain Current b I DM - 800 Power Dissipation a T A = 25 °C P D 350 mWT A = 100 °C 140 Maximum Junction-to-Ambient a R thJA 350 °C/W Operating Junction and Storage Temperature Range T T stg - 55 to 150 °C S G D P-Channel MOSFET G TO-236 (SOT-23) S D Top View DTS01 www.din-tek.jp DTS7001

Notes: a. Pulse test: PW  300 µs duty cycle  2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T A = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. a Max. Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = - 10 µA - 60 V Gate-Threshold Voltage V GS(th) V DS = V GS , I D = - 250 µA - 1 - 3 Gate-Body Leakage I GSS V DS = 0 V, V GS = ± 20 V ± 10 µA V DS = 0 V, V GS = ± 10 V ± 200 nA V DS = 0 V, V GS = ± 10 V, T J = 85 °C ± 500 V DS = 0 V, V GS = ± 5 V ± 100 Zero Gate Voltage Drain Current I DSS V DS = - 60 V, V GS = 0 V - 25 V DS = - 60 V, V GS = 0 V, T J = 85 °C - 250 On-State Drain Current a I D(on) V GS = - 10 V, V DS = - 4.5 V - 50 mA V GS = - 10 V, V DS = - 10 V - 600 Drain-Source On-Resistance a R DS(on) V GS = - 4.5 V, I D = - 25 mA 10 GS = - 10 V, I D = - 500 mA 5 V GS = - 10 V, I D = - 500 mA, T J =125 °C 9 Forward Transconductance a g fs V DS = - 10 V, I D = - 100 mA 80 mS Diode Forward Voltage V SD I S = - 200 mA, V GS = 0 V - 1.4 V Dynamic Total Gate Charge Q g V DS = - 30 V, V GS = - 15 V I D  - 500 mA 1.7 nCGate-Source Charge Q gs 0.26 Gate-Drain Charge Q gd 0.46 Input Capacitance C iss V DS = - 25 V, V GS = 0 V f = 1 MHz pFOutput Capacitance C oss Reverse Transfer Capacitance C rss Switching b Tur n-On Time t d(on) V DD = - 25 V, R L = 150  I D  - 200 mA, V GEN = - 10 V, R g = 10  ns Turn-Off Time t d(off) www.din-tek.jp DTS7001

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 012345 V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D V GS = 10 V 5 V 4 V 6 V 7 V 8 V 0 200 400 600 800 1000 I D - Drain Current (mA) V GS = 4.5 V V GS = 10 V - On-Resistance (Ω)R DS(on) V GS = 5 V I D = 500 mA - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V GS V DS = 30 V V DS = 48 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 300 600 900 1200 0246 8 10 V GS - Gate-to-Source Voltage (V) - Drain Current (mA)I D T J = - 55 °C 125 °C 25 °C 0 5 10 15 20 25 V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) C rss C oss C iss V GS = 0 V 0.0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) V GS = 10 V at 500 mA V GS = 4.5 V at 25 mA R DS(on) - On-Resistance (Normalized) www.din-tek.jp DTS7001

Source-Drain Diode Forward Voltage Threshold Voltage Variance Over Temperature 1.2 1.5 100 1000 0.00 0.3 0.6 0.9 T J = 25 °C T J = 125 °C V SD - Source-to-Drain Voltage (V) - Source Current (A)I S T J = - 55 °C V GS = 0 V - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 V GS(th) Variance (V) I D = 250 µA T J - Junction Temperature (°C) On-Resistance vs. Gate-Source Voltage Single Pulse Power, Junction-to-Ambient 0246 8 10 V GS - Gate-to-Source Voltage (V) I D = 500 mA I D = 200 mA R DS(on) - On-Resistance (Ω) 0.01 2.5 100 6000.1 Power (W) Time (s) 1.5 0.5 T A = 25 °C Normalized Thermal Transient Impedance, Junction-to-Ambient 0 0 601110 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 350 °C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM THERMAL RATINGS (TA = 25 ° C, unless otherwise noted) www.din-tek.jp DTS7001

SOT-23 (T O-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.0 35 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0 346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.03

74 Ref

e1 1.90 BSC 0.0748 Ref L 0 .40 0.60 0.016 0.024 L1 0.64 Ref 0.

025 Ref

S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

Package Information

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OMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to IndexR eturn to Index Application Note www.din-tek.jp

PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertech nology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Legal Disclaimer Notice www.din-tek.jp