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N-Channel 30-V (D-S) MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition TrenchFET Power MOSFET 100 % R g and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Power Supply - Secondary Synchronous Rectification DC/DC Converter PRODUCT SUMMARY V DS (V) R DS(on) (Ω)I D (A) Q g (Typ.) 0.0036 at V GS = 10 V 70 d 670.0044 at V GS = 4.5 V 70 d Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D d A T C = 70 °C 60 d Pulsed Drain Current I DM 120 Avalanche Current I AS Single Avalanche Energy a L = 0.1 mH E AS 101 mJ Maximum Power Dissipation a T C = 25 °C P D 78.1 b W T A = 25 °C c 3.1 Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount) c R thJA °C/W Junction-to-Case (Drain) R thJC 1.6 D56/ www.daysemi.jp D G S N-Channel MOSFE T TO-252 S GD Top View
tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VDS = 0 V , ID = 250 µA 30 V Gate T hreshold Voltage VGS( th) VDS = VGS, ID = 250 µA 12 Gate-Body Leakage IGSS VDS = 0 V , VGS = ±
20 V ± 250 nA
Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 µAVDS = 30 V , VGS = 0 V , TJ = 125 °C 50 VDS = 30 V , VGS = 0 V , TJ = 150 °C 25 On-State Drain Currenta ID( on) V DS ≥ 10 V , VGS = 1
0 V 50 A
Drain-Source On-State Resistancea RDS( on) VGS = 10 V , ID = 22 A 0 .0030 0.0036 ΩVGS = 4.5 V , ID = 20 A 0 .0036 0.0044 Forward Transconductancea gfs VDS = 15 V , ID = 20 A 110 S Dy namicb Inpu t Capacitance Ciss VGS = 0 V , VDS = 15 V , f = 1 MHz 3535 pFOutput Capacitance Coss 680 Re verse Transfer Capacitance Crs s 400 T otal Gate Chargec Qg VDS = 15 V, VGS = 10 V, ID = 2 0 A 67 100 nCGate-Source Chargec Qgs 10.5 Gate- Drain Chargec Qgd 12.2 G ate Resistance Rg f = 1 MHz 0.3 1.4 2.8 Ω Tur n-On Delay Timec td(on VDD = 15 V , RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V , Rg = 1 Ω nsRise Timec tr 10 Turn-Off Delay Timec td(off) 35 Fall Timec tf 10 Drain -Source Body Diode Ratings and Characteristics TC = 25 °Cb Co ntinuous Current IS 70 A Pulse d Current ISM 12 Forward Voltagea VSD IF = 10 A, VGS = 0 V 0.83 1.5 V Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs 41 62 ns Peak Reverse Recovery Current IRM( REC) 23 A Reverse Recovery Charge Qrr 40 60 nC D56/ www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted Outpu t Characteristics Transfer Characteristics Transconductance 100 120 0.0 0.5 1.0 1.5 2.0 VGS =1 0V thru 4 V VGS =3V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 120 180 240 300 1 22 43 64 8 60 TC = 125 °C TC = - 55 °C TC = 25 °C ID - Drain Current (A) Transconductance (S)gfs On -Resistance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.0025 0.0030 0.0035 0.0040 0.0045 2 04 06 080 100 VGS =4 . 5V VGS =1 - On -Resistance (Ω)RDS(on) ID - Drain Current (A) 0.000 0.004 0.008 0.012 0.016 0.020 46 8 10 TJ = 25 °C TJ = 150 °C - On -Resistance (Ω)RDS( on) VGS - Gate-to-Source Voltage (V) 0 4 0 6 0 80 VDS =2 VDS =1 ID =2 VDS = 8V - Gate -to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS D56/ www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Sou rce-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 TJ = 25 °C TJ = 150 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S 1000 2000 3000 4000 5000 5 10 15 20 25 30 Cis s Coss Crss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 ID =2 VGS =4 . 5V VGS =1 TJ -J unction Temperature (°C) (Normalized) - On -ResistanceRDS (on) Th reshold Voltage Drain Source Breakdown vs. Junction Temperature Current Derating 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS( th) TJ - Temperature (°C) 50 - 25 0 25 50 75 100 125 150 ID = 250 µA VDS - Drain-to-Source Voltage (V) TJ -J unction Temperature (°C) 120 160 25 50 75 100 125 150 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) D56/ www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted Sin gle Pulse Avalanche Current Capability vs. Time Time (s) (A)I DAV 100 10-3 10-2 10-110-410-5 TJ = 25 °CTJ = 150 Safe Ope rating Area 0.01 0.1 100 1000 0.1 1 10 100 TC = 25 °C Single Pulse BVDSS Limited Limited byR DS (on)* ,1 0s ,D C 1m s 10 ms, 100 ms 100 µA VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS (on) is specified Drain Current (A)ID Norm alized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.05 Single Pulse 0.02 D56/ www.daysemi.jp
- Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347
Package Information
OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to IndexRe turn to Index Application Note
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