DTU50N03

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Technical content

N-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  100 % R g and UIS Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Secondary Synchronous Rectification  DC/DC Converter PROD UCT SUMMARY VDS (V) RDS(on) (Ω)I D (A ) Q g (T yp.) 0.0051 at VGS = 10 V 50d 21.70.0063 at VGS = 4.5 V 50d Notes: a. Duty cycle ≤ 1 % b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gat e-Source Voltage VGS ± 20 Contin uous Drain Current (TJ = 150 ° TC = 25 ° C ID 50d A TC = 70 ° C 50d Pulsed Dr ain Current IDM 100 A valanche Current IAS 40 Single A valanche Energya L = 0.1 mH EAS 80 mJ Maximum Power Dissipationa TC = 25 ° C PD 59.5b W TA = 25 °Cc 2.7 Ope rating Junction and Storage Temperature Range TJ, Tstg - 55 to 1 50 °C THERMAL RESISTANCE RATINGS P arameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c Rth JA 46 Junction-to-Case (Drain) Rth JC 2.1 D G S N-Channel MOSFET T O-252 SGD T op View D56/ www.daysemi.jp

tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage V DS VDS = 0 V , ID = 250 µA V Gate Threshold Voltage VGS( th) VDS = VGS, ID = 250 µA 1 2.5 Gate-Body Leakage IGSS VDS = 0 V , VGS = ±

20 V ± 250 nA

Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V µAVDS = 30 V , VGS = 0 V , TJ = 125 °C VDS = 30 V , VGS = 0 V , TJ = 150 °C 250 On-State Drain Currenta ID( on) V DS ≥ 10 V , VGS = 1

0 V 50 A

Drain-Source On-State Resistancea RDS( on) VGS = 10 V , ID = 22 A 0.0042 0.0051 Ω VGS = 4.5 V , ID = 20 A 0.0052 0.0063 Forward Transconductancea gfs VDS = 15 V , ID = 20 A 110 S Dy namicb Inpu t Capacitance Ciss VGS = 0 V , VDS = 15 V , f = 1 MHz 2780 pFOutput Capacitance Coss 641 Re verse Transfer Capacitance Crs s 260 T otal Gate Chargec Qg VDS = 15 V, VGS = 10 V, ID =

20 A 44 66

VDS = 15 V , VGS = 4.5 V , ID = 20 A 21.7 32.6 Gate-Source Chargec Qgs 7 Gate- Drain Chargec Qgd 6.7 G ate Resistance Rg f = 1 MHz 0.4 2 4 Ω Tur n-On Delay Timec td(on VDD = 15 V , RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V , Rg = 1 Ω ns Rise Timec tr 91 Turn-Off Delay Timec td(off) 35 Fall Timec tf 91 Drain -Source Body Diode Ratings and Characteristics TC = 25 °Cb Co ntinuous Current IS 50 A Pulse d Current ISM 10 Forward Voltagea VSD IF = 10 A, VGS = 0 V 0.75 1.5 V Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs 34 51 ns Peak Reverse Recovery Current I RM( REC) 23 A Reverse Recovery Charge Qrr 34 51 nC D56/ www.daysemi.jp

L CHARACTERISTICS 25 °C, unless otherwise noted Drain to Source Voltage vs. ID Transfer Charac teristics Transconductance 100 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS =3 V VGS =

10 V thru 4 V

0.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 135 180 6 12 18 24 30 ID - Drain Current (A) Transconductance (S)gfs TC = 125 °C TC = - 55 °C TC = 25 °C On-Resistance vs . Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.003 0.004 0.005 0.006 0.007 20 40 60 80 100 VGS =1 VGS =4 . 5V - On -Resistance (Ω)RDS (on) ID - Drain Current (A) 0.000 0.003 0.006 0.009 0.012 0.015 246 8 1 0 TJ = 25 °C TJ = 150 °C - On -Resistance (Ω)RDS (on) VGS - Gate-to-Source Voltage (V) 1 02 03 04 05 0 ID =2 VDS =1 VDS =8V VDS =2 - Gate -to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS D56/ www.daysemi.jp

PICAL CHARACTERISTICS 25 °C, unless otherwise noted S ource-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 0.0 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 750 1500 2250 3000 3750 5 10 15 20 25 30 Cis s Coss Crss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 ID =2 VGS =4 . 5V VGS =1 TJ - Junction Temperature (°C) (Normalized) - On -ResistanceRD S(on) Th reshold Voltage Drain Source Breakdown vs. Junction Temperature Current Derating 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 μA (V)VGS( th) TJ - Temperature (°C) - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 μA VDS - Drain-to-Source Voltage (V) TJ - Temperature (°C) 100 2 55 07 5 1 0 0 1 2 5 1 5 0 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) D56/ www.daysemi.jp

L CHARACTERISTICS 25 °C, unless otherwise noted Sin gle Pulse Avalanche Current Capability vs. Time Time (s) (A)I DAV 100 10-3 10-2 10-110-410-6 TJ 10-5 TJ = 25 °C= 150 Safe Ope rating Area 0.01 0.1 100 1000 0.1 1 10 100 TC = 25 °C Single Pulse BVDSS Limited Limited by RDS (on)* 100 μA s VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS (on) is specified Drain Current (A)ID ms 1 s, 10 s, DC 100 ms Norm alized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 0 1110-110-4 0.2 0.1 D uty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.05 Single Pulse 0.02 D56/ www.daysemi.jp

• Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347

Package Information

OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to IndexRe turn to Index Application Note

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