DTU40N10

DTU40N10_13 DINTEK | Alldatasheet

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N-Channel 100-V (D-S) MOSFET

FEATURES

• T renchFET® Power MOSFETS 175 °C Junction Temperature  Low Thermal Resistance Package PRODUC T SUMMARY V(BR)DSS (V) rDS(on) (Ω)I D (A) 100 .030 at VGS = 10 V 40 0.034 at VGS = 6 V 37.5 D G S N-Channel MOSFET Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Pa rameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate -Source Voltage VGS ± 20 Continuous D rain Current (TJ = 175 °C TC = 25 °C ID A TC = 125 °C 23 Pulsed Dr ain Current IDM 75 Av alanche Current IAR 35 Repetitive A valanche Energya L = 0.1 mH EAR 61 mJ Max imum Power Dissipationa TC = 25 °C PD 107b W TA = 25 °Cc 3.75 Oper ating Junction and Storage Temperature Range TJ, Tstg - 55 to 17 5 °C THERMAL RESIST ANCE RATINGS Pa rameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJ A 40 °C/ W Junction-to-Case (Drain) RthJC 1.4 Available RoHS* COMPLIANT T O-252 SGD T op View DT81 www.din-tek.jp

es: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIF ICATIONS TJ = 25 °C, unless otherwise noted Pa rameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(B R)DSS VSS = 0 V, ID = 250 µA 100 V Gate-Thres hold Voltage VGS(t h) VDS = VGS, ID = 250 µA 24 Gate-Bo dy Leakage IGSS VDS = 0 V, VGS = ± 2

0 V ± 100 nA

Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V 1 µAVDS = 80 V, VGS = 0 V, TJ = 125 °C 50 VDS = 80 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on ) V DS ≥ 5 V, VGS = 10 V 75 A Drain-Source On-State Resistancea rDS(o VGS = 10 V, ID = 15 A 0.024 0.030 Ω VGS = 6 V, ID = 10 A 0.026 0.034 VGS = 10 V, ID = 15 A, TJ = 125 °C 0.054 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.067 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 S Dynam icb Input Capacita nce Ciss VGS = 0 V, VDS = 25 V, f = 1 MH z 2400 pFOutput Capacitance Coss 270 Rev erse Transfer Capacitance Crss 90 To tal Gate Chargec Qg VDS = 5

0 V, VGS = 10 V

, ID = 40 A 35 60 nCGate-Source Chargec Qgs 11 Gate-Dr ain Chargec Qgd 9 Ga te Resistance RG 1.7 Ω Tur n-On Delay Timec td(on) VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 11 2 nsRise Timec tr 12 2 Turn-Off Delay Timec td(off) 30 4 Fall Timec tf 12 2 Sour ce-Drain Diode Ratings and Characteristics TC = 25 °Cb Contin uous Current IS 40 A Pulsed Current ISM 75 Forw ard Voltagea VSD IF = 30 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 30 A, di/dt = 100 A/µs 60 10 0 ns Peak Reverse Recovery Current IRM(REC) 58 A Re verse Recovery Charge Qrr 0.15 0.4 µC DT81 www.din-tek.jp

HARACTERISTICS 25 °C, unless otherwise noted Output Charac teristics Transconductance Capacitance 0 2468 1 0 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 6 V 4 V - Dr ain Current (A)I D 5 V 100 0 1 53 04 56 07 5 - T ransconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 600 1200 1800 2400 3000 0 2 04 06 08 0 1 0 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Ch aracteristics On-Resistance vs. Drain Current Gate Charge 0 123 456 VGS - Gate-to-Source Voltage (V) - Dr ain Current (A)ID 25 °C - 55 °C TC = 125 °C 0.00 0.02 0.04 0.06 0.08 0 1 53 04 56 07 5 ID - Drain Current (A) VGS = 10 V On-Resistance (Ω)rDS(on) VGS = 6 V 0 1 02 03 04 05 06 07 0 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 50 V ID = 40 A DT81 www.din-tek.jp

CAL CHARACTERISTICS 25 °C, unless otherwise noted On-Res istance vs. Junction Temperature Avalanche Current vs. Time (Normaliz ed) - On-Resistance rDS(on) 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - J unction Temperature (°C) VGS = 10 V ID = 15 A tin (s) 1000 0.00001 0.001 0.1 0.1 (A) I Dav 0.01 IAV (A) at TA = 150 °C 100 0.0001 IAV (A) at TA = 25 °C Sour ce-Drain Diode Forward Voltage Drain-Source Breakdown Voltage vs. Junction Temperature VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 100 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C 100 105 110 115 120 125 130 - 50 - 25 0 25 50 75 100 125 150 175 TJ - J unction Temperature (°C) ID = 10 mA Drain-Source Breakdo wn Voltage (V) DT81 www.din-tek.jp

m Avalanche and Drain Current vs. Case Temperature 0 25 50 75 100 125 150 175 TC - Ambient Temperature (°C) - Dr ain Current (A)I D Sa fe Operating Area 1000 0.1 1 10 1000 0.1 100 TC = 25 °C Single Pulse - Dr ain Current (A)I D 1 ms 10 ms DC, 100 ms 10 µs 100 µs 100 Limited by rDS( on)* VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS( on) is specified Normalized T hermal Transient Impedance, Junction-to-Case Square Wa ve Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normaliz ed Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 DT81 www.din-tek.jp

• Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347

Package Information

OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to IndexRe turn to Index Application Note

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