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/C0068T renchFET/C0114 Power MOSFET /C0068175/C0095C Maximum Junction Temperature /C0068100% Rg T ested N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rD S(on) (/C0087) ID (A) 60 0.016 @ VGS = 10 V 40 D G S N-Channel MOSFET T O-252 SGD T op View ABSOLUTE MAXIMUM RATINGS (TA = 25/C0095C UNLESS OTHER WISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source V oltage VGS /C003420 V Continuous Drain Current (TJ = 175/C0095C)b TC = 25/C0095C ID Continuous Drain Current (TJ = 175/C0095C)b TC = 125/C0095C ID Pulsed Drain Current IDM 60 A Continuous Source Current (Diode Conduction) IS 40 A valanche Current IAR 40 Repetitive Avalanche Energy (Duty Cycle /C0118 1%) L = 0.1 mH EAR 80 mJ Maximum Power Dissipation TC = 25/C0095C P 136b WMaximum Power Dissipation TA = 25/C0095C PD 3a W Operating Junction and Storage T emperature Range TJ, Tst g −55 to 175 /C0095C THERMAL RESISTANCE RATINGS Parameter Symbol T ypical Maximum Unit Jt i t A b i t a t /C0118 10 sec R 15 18 Junction-to-Ambienta Steady State Rth JA 40 50 /C0095C/W Junction-to-Case Rth JC 0.85 1.1 C/W Notes Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. D56/ www.daysemi.jp

TIONS (TJ = 25/C0095C UNLESS OTHER WISE NOTED) Parameter Symbol T est Condition Min Ty pa Max Unit Static Drain-Source Breakdown Voltage V( BR)DSS VGS = 0 V , ID = 250 /C0109A 60 V Gate Threshold V oltage VGS (th) VDS = VGS, ID = 250 /C0109A 2.0 4.0 V Gate-Body Leakage IGS S VDS = 0 V , VGS = /C003420 V /C0034100 nA VDS = 60 V , VGS = 0 V 1 Zero Gate V oltage Drain Current IDS S VDS = 60 V , VGS = 0 V , TJ = 125/C0095C 50 /C0109Ag DS S VDS = 60 V , VGS = 0 V , TJ = 175/C0095C 250 /C0109 On-State Drain Currentb ID( on) VDS = 5 V , VGS = 10 V 40 A VGS = 10 V , ID = 40 A 0.013 0.016 Drain-Source On-State Resistanceb rDS (on) VGS = 10 V , ID = 40 A, TJ = 125/C0095C 0.027 /C0087DS (on) VGS = 10 V , ID = 40 A, TJ = 175/C0095C 0.037 Forward T ransconductanceb gfs VDS = 15 V , ID = 40 A 45 S Dynamica Input Capacitance Cis s 1960 Output Capacitance Cos s VGS = 0 V , VDS = 25 V , F = 1 MHz 370 pF Reverse T ransfer Capacitance Crss 200 T otal Gate Chargec Qg 42 60 Gate-Source Chargec Qgs VDS = 40 V , VGS = 10 V , ID = 40 A 7 nC Gate-Drain Chargec Qgd DS , GS , D Gate Resistance Rg 0.5 2.7 /C0087 T urn-On Delay Timec td( on) 12 20 Rise T imec tr VDD = 40 V , RL = 1.0 /C0087 52 80 ns T urn-Off Delay Timec td( off) VDD = 40 V, RL = 1.0 /C0087 ID /C0094 40 A, VGE N = 10 V , Rg = 2.5 /C0087 25 38 ns Fall T imec tf 10 15 Source-Drain Diode Ratings and Characteristic (TC = 25/C0095C) Pulsed Current ISM 40 A Diode Forward V oltageb VSD IF = 40 A, VGS = 0 V 1.0 1.5 V Source-Drain Reverse Recovery T ime trr IF = 40 A, di/dt = 100 A//C0109s 45 70 ns Notes Guaranteed by design, not subject to production testing. b. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. Independent of operating temperature. D56/ www.daysemi.jp

CHARACTERISTICS (25/C0095C UNLESS NOTED) 2 04 06 08 0 1 0 0 500 1000 1500 2000 2500 3000 204 06 08 0 Output Characteristics Transfer Characteristics Capacitance Gate Charge Transconductance On-Resistance vs. Drain Current VDS − Drain-to-Source V oltage (V) − Drain Current (A)I D VGS − Gate-to-Source V oltage (V) − Drain Current (A)I D− Gate-to-Source V oltage (V) − On-Resistance ( Qg − T otal Gate Charge (nC) ID − Drain Current (A) VDS − Drain-to-Source V oltage (V) C − Capacitance (pF) rDS(on) /C0087)V GS − T ransconductance (S)g fs 100 2468 1 0 1 53 04 56 07 5 0.00 0.01 0.02 0.03 0.04 2 04 06 08 0 1 0 0 100 012 34567 −55/C0095C TC = 125/C0095C VDS = 10 V ID = 40 A VGS = 10 thru 7 V 5 V VGS = 10 V TC = −55/C0095C 25/C0095C 125/C0095C Cos s Cis s ID − Drain Current (A) 6 V 25/C0095C Crss 3, 4 V D56/ www.daysemi.jp

CHARACTERISTICS (25/C0095C UNLESS NOTED) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 −50 −25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage TJ − Junction T emperature (/C0095C) VSD − Source-to-Drain V oltage (V) − Source Current (A)I S 100 0.01 0.3 0.6 0.9 1.2 VGS = 10 V ID = 40 A 0.1 TJ = 25/C0095C TJ = 150/C0095C rDS (on) − On-Resiistance (Normalized) THERMAL RATINGS Safe Operating Area VDS − Drain-to-Source V oltage (V) − Drain Current (A)I D 0.1 0.1 1 10 100 Limited by rDS (on) 1000 Normalized Thermal T ransient Impedance, Junction-to-Case Square W ave Pulse Duration (sec) 0.1 0.01 10−4 10−3 10−2 10−1 11 Normalized Ef fective Transient Thermal Impedance Maximum A valanche Drain Current vs. Case Temperature TC − Case T emperature (/C0095C) − Drain Current (A)I D 25 50 75 100 125 150 175 0.2 0.1 Duty Cycle = 0.5 10 ms 100 ms 1 s, dc 100 /C0109s 10 /C0109s 1 ms 0.05 0.02 Single Pulse 100 TC = 25/C0095C Single Pulse D56/ www.daysemi.jp

  • Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347

Package Information

OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to IndexRe turn to Index Application Note

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