DTU40N03

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Technical content

N-Channel 30-V (D-S) MOSFET

FEATURES

• Halo gen-free  TrenchFET ® Power MOSFET  100 % R g Test ed  100 % UIS Tested

APPLICATIONS

 Notebo ok DC/DC PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A )a Qg ( Typ.) 0.0057 at VGS = 1

0 V 40

13.8 nC 0.0076 at VGS = 4.5 V 40 Notes: Based on TC = 25 ° C. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS 30 VGat e-Source Voltage VGS ± 20 Contin uous Drain Current (TJ = 150 ° TC = 25 ID 40a A TC = 70 °C 40a TA = 25 °C 22.7b, c TA = 70 °C 19.7b, c Pulsed Dr ain Current IDM 70 A valanche Current L = 0.1 mH IAS 35 A valanche Energy EAS 61 mJ Contin uous Source-Drain Diode Current TC = 25 °C IS 40a ATA = 25 °C 4.1b, c Max imum Power Dissipation TC = 25 PD WTC = 70 °C 32 TA = 25 °C 5b, c TA = 70 °C 3.2b, c Ope rating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °CSoldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS P arameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient t ≤ 10 s RthJ A 20 25 °C/WMaximum Junction-to-Case (Drain) Steady State RthJC 2.0 2.5 RoHS COMPLIANT N-Channel MOSFET G D S TO-252 SGD Top View D56/ www.daysemi.jp

tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V , ID = 250 µA 30 V VDS T emperature Coefficient ΔVDS/TJ ID = 250 µA 27 mV/°C VGS( th) T emperature Coefficient ΔVGS( th)/TJ - 5. Gate-Source Threshold Voltage VGS (th) VDS = VGS , ID = 250 µA 13 V Gate-Source Leakage IGSS VDS = 0 V , VGS = ± 20 V ± 1 00 nA Zero Gate Voltage Drain Current IDSS VDS = 3

0 V, VGS = 0 V 1

µAVDS = 30 V , VGS = 0 V , TJ = 55 °C 5 On-State Drain Currenta ID( on) V DS ≥ 5 V , VGS = 10 V 50 A Drain-Source On-State Resistancea RDS( on) VGS = 10 V , ID = 20 A 0.0047 0.0057 ΩVGS = 4.5 V , ID = 18 A 0.0062 0.0076 Forward Transconductancea gfs VDS = 15 V , ID = 20 A 90 S Dy namicb Inpu t Capacitance Ciss VDS = 15 V, VGS = 0 V , f = 1 MHz 1720 pFOutput Capacitance Cos s 35 Reverse Transfer Capacitance Crs s 13 Total Gate Charge Qg VDS =

15 V, VGS = 1

0 V, ID = 2

0 A 29 44

VDS = 15 V , VGS = 4.5 V , ID = 20 A 13.8 Gate-Source Charge Qgs 5.0 Gate- Drain Charge Qgd 4.6 G ate Resistance Rg f = 1 MH z 1.1 2.2 Ω Tur n-On Delay Time td( on) VDD = 15 V , RL = 15 Ω ID ≅ 1.0 A, VGEN = 4.5 V , Rg = 1 Ω ns Rise Time tr 14 Turn-Off Delay Time td( off) 30 Fall Time tf 15 Tur n-On Delay Time td( on) VDD = 15 V , RL = 15 Ω ID ≅

1.0 A, VGEN =

10 V, Rg = 1

Ω 11 20 Rise Time tr 91 Turn-Off Delay Time td( off) 27 Fall Time tf 91 Drain -Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 ° C 40 A Pulse Diode Forward Current ISM 70 Body Diode V oltage VSD IS = 4.1 A, VGS = 0 V 0.75 1.2 V Body Diode Reverse Recovery Time trr IF =

4.1 A, dI/dt = 100 A/µs, TJ = 25

Body Diode Reverse Recovery Charge Qrr 1 7 35 nC Reverse Recovery Fall Time ta 13 ns Re verse Recovery Rise Time tb 12 D56/ www.daysemi.jp

L CHARACTERISTICS 25 °C, unless otherwise noted Outp ut Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0.0 0.5 1.0 1.5 2.0 VGS =1 0t h ru 4 V VGS =3V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.003 0.004 0.005 0.006 0.007 0.008 1 02 03 04 05 06 07 0 VGS =1 VGS =4 . 5V - On -Resistance (Ω)RDS(on) ID - Drain Current (A) 6 12 18 24 30 VDS =2 2 . 5V ID =2 VDS =7 . 5V VDS =1 - Gate -to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Tran sfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 600 1200 1800 2400 6 12 18 24 30 Cis s Coss Crss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.7 0.9 1.1 1.3 1.5 1.7 50 - 25 0 25 50 75 100 125 150 VGS =1 VGS =4 . 5V ID =2 TJ -J unction Temperature (°C) (Normalized) - On -ResistanceRDS( on) D56/ www.daysemi.jp

PICAL CHARACTERISTICS 25 °C, unless otherwise noted Sou rce-Drain Diode Forward Voltage Threshold Voltage 0.0 0.01 0.001 0.1 100 TJ = 150 °C TJ = - 50 °C TJ = 25 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =1m A Variance (V)VGS( th) TJ - Temperature (°C) On -Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 012 34567 8 91 0 TJ = 25 °C TJ = 125 °C - On -Resistance (Ω)RDS(on VGS - Gate-to-Source Voltage (V) 120 160 200 0 111 0 0 .00 .01 Time (s) Power (W) 0.1 Saf e Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse Limited byR DS (on)* BVDSS Limited s 100 µs ms 100 ms s 100 s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS (on) is specified Drain Current (A)ID D56/ www.daysemi.jp

L CHARACTERISTICS 25 °C, unless otherwise noted The power dissipation P D is b ased on T J(max ) = 15 0 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 25 50 75 100 125 150 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) Pow er, Junction-to-Case 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Po wer, Junction-to-Ambient 0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 TA -A mbient Temperature (°C) Power (W) D56/ www.daysemi.jp

PICAL CHARACTERISTICS 25 °C, unless otherwise noted Norm alized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM Duty Cycle, D = 2. Per Unit Base = RthJA = 70 °C/W 3. TJM -T A =P DMZthJA(t) Surface Mounted Duty Cycle = 0.5 0.02 No rmalized Thermal Transient Impedance, Junction-to-Case 0.1 0.01 0.2 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 10-3 10-2 110-110-4 0.05 0.02 Single Pulse 0.1 D56/ www.daysemi.jp

• Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347

Package Information

OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to IndexRe turn to Index Application Note

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