DTU30N02

DTU30N02_13 DINTEK | Alldatasheet

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Technical content

N-Channel 20-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET Gen III Power MOSFET  100 % R g Tested  100 % UIS Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 DC/DC  Low Voltage Drive  POL PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 0.015 at V GS = 10 V 30 15.5 nC0.024 at V GS = 4.5 V 30 0.033at V GS = 2.5 V 30 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS

20 VGate-Source Voltage V

± 12 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D a A T C = 70 °C 30 a T A = 25 °C 22.6 b, c T A = 70 °C 18.2 b, c Pulsed Drain Current I DM Continuous Source-Drain Diode Current T C = 25 °C I S a T A = 25 °C 4.1 b, c Single Pulse Avalanche Current L = 0.1 mH I AS Single Pulse Avalanche Energy E AS 20 mJ Maximum Power Dissipation T C = 25 °C P D 27.7 WT C = 70 °C 17.7 T A = 25 °C 4.6 b, c T A = 70 °C 3.0 b, c Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Un it Maximum Junction-to-Ambient t ≤ 10 s R thJA 22 27 °C/W Maximum Junction-to-Case (Drain) Steady State R thJC 3.5 4.5 N-Channel MOSFET G D S T O-252 S GD Top V ie w www.din-tek.jp DTU30N02

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T J = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 µA 20 V V DS Temperature Coefficient ΔV DS J I D = 250 µA 19 mV/°CV GS(th) Temperature Coefficient ΔV GS(th) J - 4.0 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 0.6 1.5 V Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current I DSS V DS = 20 V, V GS = 0 V 1 µAV DS = 20 V, V GS = 0 V, T J = 55 °C 10 On-State Drain Current a I D(on) V DS ≥ 5 V, V GS = 10 V 20 A Drain-Source On-State Resistance a R DS(on) V GS = 10 V, I D = 10 A 0.015 0.024 ΩV GS = 4.5 V, I D = 8 A 0.026 0.033 V GS = 2.5 V, I D = 6 A 0.036 0.040 Forward Transconductance a g fs V DS = 10 V, I D = 10 A 70 S Dynamic b Input Capacitance C iss V DS = 10 V, V GS = 0 V, f = 1 MHz 1785 pFOutput Capacitance C oss 460 Reverse Transfer Capacitance C rss 210 Total Gate Charge Q g V DS = 10 V, V GS = 10 V, I D = 10 A 32 nCV DS = 15 V, V GS = 4.5 V, I D = 10 A 15.5 23.5 Gate-Source Charge Q gs Gate-Drain Charge Q gd 3.6 Gate Resistance R g f = 1 MHz 0.2 0.75 1.5 Ω Tur n-On Delay Time t d(on) V DD = 10 V, R L = 10 Ω I D ≅ 10 A, V GEN = 10 V, R g = 1 Ω 11 22 ns Rise Time t r 11 22 Turn-Off Delay Time t d(off) 30 55 Fall Time t f 91 8 Turn-On Delay Time t d(on) V DD = 10 V, R L = 10 Ω I D ≅ 10 A, V GEN = 4.5 V, R g = 1 Ω 19 35 Rise Time t r 14 28 Turn-Off Delay Time t d(off) 36 65 Fall Time t f 13 26 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C 25 A Pulse Diode Forward Current a I SM Body Diode Voltage V SD I S = 5 A 0.71 1.1 V Body Diode Reverse Recovery Time t rr I F = 5 A, dI/dt = 100 A/µs, T J = 25 °C 21 40 ns Body Diode Reverse Recovery Charge Q rr 10.5 20 nC Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b www.din-tek.jp DTU30N02

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge V DS - Drain-to-Source Voltage (V) I D - Drain Current (A) V GS =1 0 V thru 3 V V GS =2 V 0.003 0.004 0.005 0.006 0.007 0.008 01 4 28 42 56 70 - On-Resistance (Ω)R DS(on) I D - Drain Current (A) V GS =2 .5 V V GS =1 0 V V GS =4 .5 V 0 7 14 21 2 8 35 I D =1 0A - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V GS V DS =1 5 V V DS =1 0 V V DS =5 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) I D - Drain Current (A) T C = 25 °C T C = 125 °C T C =- 5 5 ° C C rss 500 1000 1500 2000 2500 04 8 12 16 20 C iss V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) C oss 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) (Normalized) R DS(on) - On-Resistance V GS =2 .5 V I D =1 0A V GS =1 0 V www.din-tek.jp DTU30N02

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage V SD - Source-to-Drain Voltage (V) I S - Source Current (A) 0.01 0.001 0.1 100 T J = 25 °C T J = 150 °C - 0.7 - 0.5 - 0.3 - 0.1 0.1 0.3 - 50 - 25 0 25 50 75 100 125 150 I D = 250 µA Variance (V)V GS(th) T J - Temperature (°C) I D =5m A On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.005 0.010 0.015 0.020 0.025 012345 67 8 91 0 R DS(on) - On-Resistance (Ω) V GS - Gate-to-Source Voltage (V) T J = 25 °C T J = 125 °C I D =1 0A 120 150 01110 0 .00 .01 Time (s) Power (W) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 100 0.01 - Drain Current (A)I D 0.1 V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified 1m s 10 ms 100 ms 0.1 1 10 T A = 25 °C Single Pulse Limited byR DS(on) DC 10 s BVDSS www.din-tek.jp DTU30N02

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is ba sed on T J(max) = 150 ° C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 T C - Case Temperature (°C) I D - Drain Current (A) Package Limited Power, Junction-to-Case 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) Power, Junction-to-Ambient 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power (W) www.din-tek.jp DTU30N02

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 1 10 100010 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse t t Notes: P DM 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 70 °C/W 3. T JM - T A DM Z thJA(t) t t 4. Surface Mounted Duty Cycle = 0.5 0.02 Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.01 0.2 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 110 0.05 0.02 Single Pulse www.din-tek.jp DTU30N02

• Dim en sion L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347

Package Information

www.din-tek.jp

OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Application Note www.din-tek.jp

UCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certifies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Legal Disclaimer Notice www.din-tek.jp