DTU2N60 DINTEK | Alldatasheet

Document overview

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Technical content

FEATURES

  • Halogen-free According to IEC 61 249-2-21 Definition
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Surface Mount (IRFRC20, SiHFRC20)
  • Straight Lead (IRFUC20, SiHFUC20)
  • Available in Tape and Reel
  • F a s t S w i t c h i n g
  • Ease of Paralleling
  • Compliant to RoHS Directive 2002/95/EC Notes Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting TJ = 25 °C , L = 37 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12). c. I SD ≤ 2.0 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PROD UCT SUMMARY VDS (V) 6 RDS(on ) (Ω)V GS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Conf iguration Single N-Channel MOSFET G D S DPAK O-252) IPAK (TO-251) G D SS D G D ABSOLUTE MAXIMU M RATINGS TC = 25 °C, unless otherwise noted PARAME TER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Vo ltage VGS ± 20 Continuous Drain Cu rrent VGS at 10 V TC = 25 °C ID 2.0 ATC = 100 °C 1.3 Pul sed Drain Currenta IDM 8.0 Linear Derating Factor 0.33 W/° C Linear Derating Factor (PCB Mount)e 0.020 Sing le Pulse Avalanche Energyb EAS 74 mJ Re petitive Avalanche Currenta IAR 2.0 A Repetitive Avalanche Energya EAR 4.2 m J Maximum Power Dissipation TC = 25 °C PD

42 W Maximum Power Dissipation (PC

B Mount)e TA = 25 °C 2.5 P eak Diode Recovery dV/dtc dV/dt 3.0 V /ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d * Pb containing terminations are not RoHS compliant, exemptions may apply DT81 www.din-tek.jp

When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. TH ERMAL RESISTANCE RATINGS PARAMETER SYMB OL MI N. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/ WMaximum Junction-to-Ambient (PCB Mount)a RthJA -- 50 Maxi mum Junction-to-Case (Drain) RthJ C -- 3.0 SPECIFIC ATIONS TJ = 25 °C, unless otherwise noted PARAMETER S Y MBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Stat ic Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Tem perature Coefficient ΔVDS/TJ R eference to 25 °C, ID = 1 mA - 0.88 - V/°C Gate-Source Threshold Voltage VGS(t h) VDS = VGS, ID = 250 μA 2 .0 - 4.0 V Gate-Source Leakage IGSS V GS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 100 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on ) V GS = 10 V ID = 1.

2 Ab -- 4

. 4 Ω Forward Transconductance gfs VDS = 50 V, ID = 1.2 A 1 .4 - - S Dynami c Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 350 pFOutput Capacitance Coss -4 8 Reverse Transfer Capacitance Crss -8 . Total Gate Charge Qg VGS = 10 V ID = 2.0 A, VDS = 360 V, see fig. 6 and 13b -- 1 nC Gate-Source Charge Qgs -- 3 . 0 Gate-Drain Charge Qgd -- 8 . 9 Turn-On Delay Time td(on VDD = 300 V, ID = 2.0 A, Rg = 18 Ω, RD = 135 Ω, see fig. 10b -1 0 ns Rise Time tr -2 3 Turn-Off Delay Time td(of f) -3 0 Fall Time tf -2 5 Internal Drain Inductance LD Be tween lead, 6 mm (0.25") from package and center of die contact -4 . 5- nH Internal Source Inductance L S -7 . Dr ain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol show ing the integral reverse p - n junction diode -- 2 . 0 A Pulsed Diode Forward Current a ISM -- 8 . 0 Body Diode Voltage VSD TJ = 25 °C, IS = 2.0 A, VGS = 0 Vb -- 1 . 6 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A /μsb - 290 580 ns Body Diode Reverse Recovery Charge Q rr - 0.67 1.3 μC Forward Turn-On Time ton Intrinsic turn-on time is negl igible (turn-on is dominated by LS and LD) D S G S D G DT81 www.din-tek.jp

PICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig . 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature DT81 www.din-tek.jp

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area DT81 www.din-tek.jp

. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS Rg D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf DT81 www.din-tek.jp

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Rg IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Var y tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge VGS D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. DT81 www.din-tek.jp

Fig. 14 - For N-Chann el P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD

  • dV/dt controlled by Rg
  • Driver same type as D.U.T.
  • ISD controlled by duty factor “D”
  • D.U.T. - device under test D.U.T. Circuit layout considerations
  • Low stray inductance
  • Ground plane
  • Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD DT81 www.din-tek.jp

TO-252AA (HIGH VOLT AGE) Notes 1. Packa ge body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 2. Package body sizes determined at the outermo st extremes of the plastic body exclusive of mold flas h, gate burrs and interlea d flash, but including any mismatch between the top and bottom of the plastic body. 3. The package top may be smaller than the package bottom. 4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum material condition. The dambar cannot be located on the lower radius of the foot. E e b D H A c L θ MILLIMETERS INCHES DI E 6.40 6.73 0.252 0.265 L 1.40 1.77 0.055 0.070 L1 2.743 REF 0.108 REF L2 0.508 BSC 0.020 BSC L3 0.89 1.27 0.035 0.050 L4 0.64 1.01 0.025 0.040 D 6.00 6.22 0.236 0.245 H 9.40 10.40 0.370 0.409 b 0.64 0.88 0.025 0.035 b2 0.77 1.14 0.030 0.045 b3 5.21 5.46 0.205 0.215 e 2.286 BSC 0.090 BSC A 2.20 2.38 0.087 0.094 A1 0.00 0.13 0.000 0.005 c 0.45 0.60 0.018 0.024 c2 0.45 0.58 0.018 0.023 D1 5.30 - 0.209 - E1 4.40 - 0.173 - θ 0' 10' 0' 10' ECN: S-81965-Rev. A, 15-Sep-08 DWG: 5973

Package Information

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TO-251AA (H IGH VOLTAGE) Notes Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension are shown in inches and millimeters. outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions b4, L2, E1 and D1. 5. Lead dimension uncontrolled in L3. 6. Dimension b1, b3 and c1 apply to base metal only. 7. Outline conforms to JEDEC outline TO-251AA. Base metal Plating b1, b3 (b, b2) c1(c) Section B - B and C - C D A c Lead tip (Datum A) Thermal P ADE1 4D1 View A - A A A C Seating plane C C B B θ1θ2 B L 3 x b2 3 x b E 2 x e 0.010 C BM A0.25 0.010 BA0.25 A CM MILLIMETERS INC HES MILLIMETERS INCHES c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15' c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35' D 5.97 6.22 0.235 0.245 ECN: S-82111-Rev. A, 15-Sep-08 DWG: 5968 www.din-tek.jp

D MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to Index Application Note www.din-tek.jp

DUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertech nology, Inc. hereby certifies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Legal Disclaimer Notice www.din-tek.jp