DTU16N25

DTU16N25 DINTEK | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

N-Channel 250-V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET Power MOSFET  175 °C Junction Temperature PRODUCT SUMMARY V DS (V) r DS(on) (Ω)I D (A) 250 0.165 at V GS = 10 V Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. TO-252 S GD Top View Drain Connected to Tab N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS 250 V Gate-Source Voltage V GS ± 20 Continuous Drain Current (T J = 175 °C) b T C = 25 °C I D A T C = 125 °C 9.8 Pulsed Drain Current I DM Continuous Source Current (Diode Conduction) I S Single Pulse Avalanche Current I AS Single Pulse Avalanche Energy L = 0.1 mH E AS 1.25 mJ Maximum Power Dissipation T C = 25 °C P D 136 b WT A = 25 °C 3 a Operating Junction and Storage Temperature Range T J , T stg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambient a t ≤ 10 sec R thJA 15 18 °C/WSteady State 40 50 Junction-to-Case (Drain) R thJC 0.85 1.1 RoHS COMPLIANT www.din-tek.jp DTU16N25

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T J = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ a Max U nit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = 0 V, I D = 250 µA 250 V Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 2.5 4.0 Gate-Body Leakage I GSS V DS = 0 V, V GS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current I DSS V DS = 250 V, V GS = 0 V 1 µAV DS = 250 V, V GS = 0 V, T J = 125 °C 50 V DS = 250 V, V GS = 0 V, T J = 175 °C 250 On-State Drain Current b I D(on) V DS = 15 V, V GS = 10 V 16 A Drain-Source On-State Resistance b r DS(on) V GS = 10 V, I D = 14 A 0.131 0.165 ΩV GS = 10 V, I D = 14 A, T J = 125 °C 0.347 V GS = 10 V, I D = 14 A, T J = 175 °C 0.462 Forward Transconductance b g fs V DS = 15 V, I D = 16 A 36 S Dynamic a Input Capacitance C iss V GS = 0 V, V DS = 25 V, f = 1 MHz 1950 pFOutput Capacitance C oss 160 Reverse Transfer Capacitance C rss Total Gate Charge c Q g V DS = 125 V, V GS = 10 V, I D = 16 A 30 42 nCGate-Source Charge c Q gs Gate-Drain Charge c Q gd Gate Resistance R g 1.6 Ω Tur n-On Delay Time c t d(on) V DD = 125 V, R L = 7.35 Ω I D ≅ 16 A, V GEN = 10 V, R g = 2.5 Ω 15 25 nsRise Time c t r 130 19 5 Turn-Off Delay Time c t d(off) 30 4 5 Fall Time c t f 100 15 0 Source-Drain Diode Ratings and Characteristics (T C = 25 °C) Pulsed Current I SM 20 A Diode Forward Voltage b V SD I F = 16 A, V GS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time t rr IF = 16 A, di/dt = 100 A/µs 115 175 ns www.din-tek.jp DTU16N25

TYPICAL CHARACTERISTICS 25 °C unless noted Output Characteristics Transconductance Capacitance V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D 04 8 1 2 1 6 2 0 V GS = 10 thru 6 V 4 V 5 V 04 8 1 2 1 6 2 0 Transconductance (S)g fs T C = - 55 °C 25 °C 125 °C I D Drain Current (A) 700 1400 2100 2800 0 40 80 120 160 200 V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) C oss C iss C rss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge V GS - Gate-to-Source Voltage (V) - Drain Current (A)I D 0 123456 - 55 °C T C = 125 °C 25 °C - On-Resistance (Ω) I D - Drain Current (A) rDS(on) 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 04 8 1 2 1 6 2 0 V GS = 10 V - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V GS 0 8 16 24 32 40 48 5 V DS = 125 V I D = 16 A www.din-tek.jp DTU16N25

TYPICAL CHARACTERISTICS 25 °C unless noted THERMAL RATINGS On-Resistance vs. Junction Temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) V GS = 10 V I D = 16 A r DS(on) - On-Resistance (Normalized) Source-Drain Diode Forward Voltage V SD - Source-to-Drain Voltage (V) - Source Current (A)I S 100 0.3 0.6 0.9 1.2 T J = 25 °C T J = 150 °C Maximum Avalanche Drain Current vs. Case Temperature T C - Case Temperature (°C) - Drain Current (A)I D 0 25 50 75 100 125 150 175 Safe Operating Area V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.1 0.1 1 10 1000 Limited by r DS(on) 100 T C = 25 °C Single Pulse 10 ms 100 ms, dc 100 µs 10 µs 100 1 ms Normalized Thermal Transient Impedance, Junction-to-Case 0.02 S q uare Wave Pulse Duration sec 0.1 0.01 10- 10- 10- 10- Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.05 Single Pulse www.din-tek.jp DTU16N25

• D im ension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347

Package Information

www.din-tek.jp

OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Application Note www.din-tek.jp

UCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certifies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Legal Disclaimer Notice www.din-tek.jp