DTU15P10

DTU15P10_13 DINTEK | Alldatasheet

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Technical content

P-Channel 100 V (D-S) MOSFET

FEATURES

• Halogen-free Accor ding to IEC 61249-2-21 Definition  TrenchFET Power MOSFET 1 0 0 % Rg and UIS Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 A ctive Clamp in Intermediate DC/DC Power Supplies  H-Bridge High Side Switch for Lighting Application Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. PR ODUCT SUMMARY VDS (V) RDS(on) ()I D (A) Qg (Ty p.) - 100 0.295 at VGS = - 10 V - 15 23.2 nC 0.315 at VGS = - 6 V - 15 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Pa rameter Symbol Limit Unit Drain-Source Voltage VDS - 100 VGate-Source Vo ltage VGS ± 20 Contin uous Drain Current (TJ = 150 °C) TC = 2 5 °C ID - 15 A TC = 7 0 °C - 9.1 TA = 25 °C - 2.3a, b TA = 70 °C - 1.9a, b Pulsed Drain Current IDM - 19 Contin uous Source-Drain Diode Current TC = 2 5 °C IS - 15 TA = 25 °C - 3a, b Av alanche Current L = 0.1 mH IAS 15 Single-Pulse Av alanche Energy EAS 11.25 mJ Ma ximum Power Dissipation TC = 2 5 °C PD WTC = 7 0 °C 33 TA = 25 °C 3.7a, b TA = 70 °C 2.4a, b Operat ing Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Solder ing Recommendations (Peak Temperature) 260 TO-252 SGD Top Vi ew S G D P-Channel MOSFET DT83 www.din-tek.jp

es: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 81 °C/W. Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TH ERMAL RESISTANCE RATINGS Param eter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t 10 s RthJ A 26 33 °C /WMaximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 SPECIF ICATIONS (TJ = 2 5 °C, unless otherwise noted) Param eter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 100 V VDS Temper ature Coefficient VDS/TJ ID = - 250 µA - 165 mV/°CVGS(t h) Temperature Co efficient VGS(th)/TJ - 6.6 Gate-So urce Threshold Voltage VGS(t h) VDS = VGS, ID = - 250 µA - 2 - 4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 0 nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V , VGS = 0 V - 1 µAVDS = - 100 V , VGS = 0 V , TJ = 55 °C - 10 On-State Drain Currenta ID(on ) VDS  - 5 V, VGS = - 10 V - 15 A Drain-Source On-State Resistancea RDS(o VGS = - 10 V , ID = - 4 A 0.245 0.295 VGS = - 6 V, ID = - 3 A 0.260 0.315 Forward Transconductancea gfs VDS = - 15 V, ID = 4 A 12 S Dynam icb Input Capacita nce Ciss VDS = - 50 V, VGS = 0 V, f = 1 MHz 1190 pFOutput Capacitance Coss 61 Rev erse Transfer Capacitance Crss 42 To tal Gate Charge Qg VDS = - 75 V , VGS = - 10 V, ID = - 3 A 27.5 nCVDS = - 75 V , VGS = - 6 V, ID = - 3 A 23.2 Gate-Source Charge Qgs 5.4 Gate- Drain Charge Qgd 8.4 G ate Resistance Rg f = 1 MHz 1.3 6.1 9.2  Tur n-On Delay Time td(on VDD = - 75 V, RL = 25  ID  - 3 A, VGEN = - 6 V, Rg = 1  20 30 ns Rise Time tr 95 145 T urn-Off DelayTime td(of f) 38 60 Fa ll Time tf 34 51 Tu r n-On Delay Time td(on VDD = - 75 V, RL = 25  ID  - 3 A, VGEN = - 10 V, Rg = 1  11 18 Rise Time tr 28 42 T urn-Off DelayTime td(of f) 52 78 Fa ll Time tf 35 53 Drain- Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 13 A Pulse Diode Forward Currenta ISM - 15 Body Diode Vo ltage VSD IS = - 3 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4 A, dI/dt =

100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge Qrr 180 270 nC Reverse Recovery Fall Time ta 45 nsRev erse Recovery Rise Time tb 20 DT83 www.din-tek.jp

HARACTERISTICS (25 °C, unless otherwise noted) Output Char acteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 02468 10 V GS = 10 thru 6 V 4 V VDS - Drain-to-Source Voltage (V) A ( t n e r ruC n i a r D - ID 5 V 0.1 0.2 0.3 0.4 0.5 0.6 048 12 16 V GS = 10 V ID - Drain Current (A) V GS = 6 V R ) n o ( S D (Ω) e c n a t s i s e R - n O - 0 6 12 18 24 30 I D = 3 A )V( e g a t l oV e c ruo S - o t - e t a G - Qg - Total Gate Charge (nC) V S G V DS = 100 V V DS = 250 V V DS = 75 V Transfer Ch aracteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.4 0.8 1.2 1.6 2.0 0123456 25 °C T C = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) A ( t n e r ruC n i a r D - ID C rss 0 340 680 1020 1360 1700 02 0 4 0 6 0 80 100 C oss C iss VDS - Drain-to-Source Voltage (V) F p ( e c n a t i c a p a C - C 0.4 0.7 1.0 1.3 1.6 1.9 2.2 - 50 - 25 0 25 50 75 100 125 150 V GS = 10 V TJ - Junction Temperature (°C) R ) n o ( S D e c n a t s i s e R - n O - ) d e z i l a m r oN( V GS = 6 V I D = 4 A DT83 www.din-tek.jp

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Sour ce-Drain Diode Forward Voltage Threshold Voltage 0.1 100 VSD A ( t n e r ruC e c ruo S - IS 1.2 1.5 0.00 0.3 0.6 0.9 - Source-to-Drain Voltage (V) 25 °CTJ = 150 °C - 0.5 - 0.2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) V ) h t ( S G)V( I D = 250 µA I D = 5 mA On-Resistance vs. Gate-to-So urce Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0123 45678 91 0 VGS - Gate-to-Source Voltage (V) R ) n o ( S D (Ω) e c n a t s i s e R - n O e c ruo S - o t - n i a r D - 25 °C 125 °C )W( r ewo P Time (s) 10 1 0.1 100 0.01 Safe Op erating Area, Junction-to-Ambient 1 ms s 10 m10 ms s 100 m100 ms s dc dc 1 1 s s 10 10 s s 100 100 1 1 0.00.01 1 1 0 100 100 0.01 0.01 10 10 ) ) A A ( ( t t n n e e r r r r u u C C n n i i a a r r D D – – I I D D 0.1 0.1 0.1 0.1 V V DS S – Drain-to-Source – Drain-to-Source Voltage (Voltage (V) ) *V *V GS S minimum minimum V V GS S at which at which r r DS(onDS(on) ) is is specified specified T T A A = 25 °C = 25 °C SinS inglele Pulse e *Limited by *Limited by r r DS(onDS( on) ) 100 11 0 100 0.01 ) A ( t n e r ruC n i a r D - ID 0.1 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 0.1 1000 T A = 25 °C Single Pulse Limited by RDS(on) 1 ms 10 ms 100 ms 1 s 10 s DC DT83 www.din-tek.jp

HARACTERISTICS (25 °C, unless otherwise noted) * T he power dissipation PD is based on TJ(ma x) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limi t. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 ID ) A ( t n e r ruC n i a r D - TC - Case Te mperature (°C) Powe r, Junction-to-Case 0 25 50 75 100 125 150 TC - Case Te mperature (°C) )W( r ewo P Powe r, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) DT83 www.din-tek.jp

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized T hermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 10 -1 100 Square Wave Pulse Duration (s) 10 1000 1 0.1 0.01 t n e i s n a r T evi t c e f f E d e z i l a m r oN e c n a d e p m I l a m r e h T 10 -4 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 65 °C 3. T JM – T = P DM Z thJA (t) t 1 t 2 4. Surface Mounted Notes: t 1 t 2 P DM Normalized T hermal Transient Impedance, Junction-to-Foot 10 -3 10 -2 10 -1 10 1 -4 0.1 0.01 Square Wave Pulse Duration (s) t n e i s n a r T evi t c e f f E d e z i l a m r oN e c n a d e p m I l a m r e h T0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 DT83 www.din-tek.jp

Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS I NCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347

Package Information

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MMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to Index Application Note www.din-tek.jp

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