DTU09N03

DTU09N03_13 DINTEK | Alldatasheet

Document overview

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Technical content

N-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET Power MOSFET  100 % R g and UIS Tested  Compl iant to RoHS Directive 2002/95/EC

APPLICATIONS

 Power Supply - Secondary Synchronous Rectification  DC/DC Converter PRODUCT SUMMARY V DS (V) R DS(on) (Ω)I D (A) Q g (Typ.) 0.0051 at V GS = 10 V 55 d 21.70.0063 at V GS = 4.5 V 55 d Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D d A T C = 70 °C 55 d Pulsed Drain Current I DM 100 Avalanche Current I AS Single Avalanche Energy a L = 0.1 mH E AS 80 mJ Maximum Power Dissipation a T C = 25 °C P D 59.5 b W T A = 25 °C c 2.7 Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount) c R thJA °C/W Junction-to-Case (Drain) R thJC 2.1 N-Channel MOSFET G D S T O-252 S GD Top V ie w www.din-tek.jp DTU09N03

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T J = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Un it Static Drain-Source Breakdown Voltage V DS V DS = 0 V, I D = 250 µA 30 V Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1 2.5 Gate-Body Leakage I GSS V DS = 0 V, V GS = ± 20 V ± 250 nA Zero Gate Voltage Drain Current I DSS V DS = 30 V, V GS = 0 V 1 µAV DS = 30 V, V GS = 0 V, T J = 125 °C 50 V DS = 30 V, V GS = 0 V, T J = 150 °C 250 On-State Drain Current a I D(on) V DS ≥ 10 V, V GS = 10 V 55 A Drain-Source On-State Resistance a R DS(on) V GS = 10 V, I D = 22 A 0.0042 0.0051 Ω V GS = 4.5 V, I D = 20 A 0.0052 0.0063 Forward Transconductance a g fs V DS = 15 V, I D = 20 A 110 S Dynamic b Input Capacitance C iss V GS = 0 V, V DS = 15 V, f = 1 MHz 2780 pFOutput Capacitance C oss 641 Reverse Transfer Capacitance C rss 260 Total Gate Charge c Q g V DS = 15 V, V GS = 10 V, I D = 20 A 44 66 nC V DS = 15 V, V GS = 4.5 V, I D = 20 A 21.7 32.6 Gate-Source Charge c Q gs Gate-Drain Charge c Q gd 6.7 Gate Resistance R g f = 1 MHz 0.4 2 4 Ω Tur n-On Delay Time c t d(on) V DD = 15 V, R L = 1.5 Ω I D ≅ 10 A, V GEN = 10 V, R g = 1 Ω 81 6 ns Rise Time c t r 91 8 Turn-Off Delay Time c t d(off) 35 5 3 Fall Time c t f 91 8 Drain-Source Body Diode Ratings and Characteristics T C = 25 °C b Continuous Current I S A Pulsed Current I SM 100 Forward Voltage a V SD I F = 10 A, V GS = 0 V 0.75 1.5 V Reverse Recovery Time t rr I F = 10 A, dI/dt = 100 A/µs 34 51 ns Peak Reverse Recovery Current I RM(REC) 23 A Reverse Recovery Charge Q rr 34 5 1 nC www.din-tek.jp DTU09N03

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Drain to Source Voltage vs. I D Transfer Characteristics Transconductance 100 V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D V GS =3 V V GS = 10 V thru 4 V T C = 25 °C T C = 125 °C T C = - 55 °C V GS - Gate-to-Source Voltage (V) - Drain Current (A)I D 135 180 0 6 12 18 24 30 I D - Drain Current (A) - Transconductance (S)g fs T C = 125 °C T C = - 55 °C T C = 25 °C On-Resistance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.003 0.004 0.005 0.006 0.007 0 20 40 60 80 100 V GS =1 0V V GS =4 .5 V - On-Resistance (Ω)R DS(on) I D - Drain Current (A) 0.000 0.003 0.006 0.009 0.012 0.015 2468 10 T J = 25 °C T J = 150 °C - On-Resistance (Ω)R DS(on) V GS - Gate-to-Source Voltage (V) 0 1 02 03 04 05 0 I D =2 0A V DS =1 5V V DS =8V V DS =2 4V - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V GS www.din-tek.jp DTU09N03

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 T J = 25 °C T J = 150 °C V SD - Source-to-Drain Voltage (V) - Source Current (A)I S 750 1500 2250 3000 3750 0 5 10 15 20 25 30 C iss C oss C rss V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 I D =2 0A V GS =4 .5 V V GS =1 0V T J - Junction Temperature (°C) (Normalized) - On-ResistanceR DS(on) Threshold Voltage Drain Source Breakdown vs. Junction Temperature Current Derating 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 175 I D = 250 μA (V)V GS(th) T J - Temperature (°C) - 50 - 25 0 25 50 75 100 125 150 175 I D = 250 μA V DS - Drain-to-Source Voltage (V) T J - Temperature (°C) 100 0 255 07 5 1 0 0 1 2 5 1 5 0 Package Limited T C - Case Temperature (°C) I D - Drain Current (A) www.din-tek.jp DTU09N03

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Single Pulse Avalanche Current Capability vs. Time Time (s) (A)I DAV 100 T J T J = 25 °C = 150 °C Safe Operating Area 0.01 0.1 100 1000 0.1 1 10 100 T C = 25 °C Single Pulse BVDSS Limited Limited by R DS(on) 100 μA 1m s V DS - Drain-to-Source Voltage (V) GS > minimum V GS at which R DS(on) is specified - Drain Current (A)I D 10 ms 1 s, 10 s, DC 100 ms Normalized Thermal Transient Impedance, Junction-to-Case 01110 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.05 Single Pulse 0.02 www.din-tek.jp DTU09N03

• Dim en sion L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347

Package Information

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OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Application Note www.din-tek.jp

UCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certifies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Legal Disclaimer Notice www.din-tek.jp