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N-Channel 30-V (D-S) MOSFET
FEATURES
- Halo gen-free TrenchFET ® Gen III Power MOSFET 100 % R g Test ed 100 % Avalanche Tested
APPLICATIONS
Low-Side Switch for DC/DC Converters - Servers - POL - VRM OR-ing PROD UCT SUMMARY VDS (V) RD S(on) (Ω) ID (A )a, g Qg ( Typ.) 0.0041 at VGS = 10 V 60g 34 nC0.0059 at VGS = 4 .5 V 60g N-Channel MOSFET G D S Notes: Based on TC = 25 ° b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS 30 VGat e-Source Voltage VGS ± 20 Contin uous Drain Current (TJ = 150 ° TC = 25 °C ID 60g A TC = 70 °C 60g TA = 25 °C 36b, c TA = 70 °C 29b, c Pulsed Dr ain Current IDM 80 Contin uous Source-Drain Diode Current TC = 25 °C IS 60g TA = 25 °C 4.9b, c Single Pulse A valanche Current L = 0.1 mH IAS 50 Single Pulse A valanche Energy EAS 125 mJ Max imum Power Dissipation TC = 25 °C PD WTC = 70 °C 53 TA = 25 °C 5.4b, c TA = 70 °C 3.4b, c Ope rating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Solder ing Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS P arameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient t ≤ 10 s RthJ A 18 23 °C/WMaximum Junction-to-Case (Drain) Steady State RthJC 1.0 1.5 RoHS COMPLIANT T O-252 SGD Top View D56/ www.daysemi.jp
tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V , ID = 250 µA 30 V VDS T emperature Coefficient ΔVDS/TJ ID = 250 µA 28 mV/°CVGS( th) T emperature Coefficient ΔVGS( th)/TJ - 6 Gate-Source Threshold Voltage VGS( th) VDS = VGS, ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V , VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 µAVDS = 30 V, VGS = 0 V , TJ = 55 °C On-State Drain Currenta ID (on) V DS ≥ 5 V , VGS = 10 V 30 A Drain-Source On-State Resistancea RDS( on) VGS = 1
0 V, ID = 2
0 A 0.0031 0.0041 ΩVGS = 4.5 V , ID = 20 A 0.0043 0.0059 Forward Transconductancea gfs VDS = 10 V , ID = 20 A 100 S Dy namicb Inpu t Capacitance Ciss VDS = 15 V , VGS = 0 V , f = 1 MHz 4590 pFOutput Capacitance Cos s 810 Re verse Transfer Capacitance Crs s 320 T otal Gate Charge Qg VDS = 15 V , VGS = 10 V , ID = 20 A 74 110 nCVDS = 15 V , VGS = 4.5 V , ID = 20 A Gate-Source Charge Qgs 12 Gate- Drain Charge Qgd 10 G ate Resistance Rg f = 1 MHz 0.2 0.8 1.6 Ω Tur n-On Delay Time td( on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V , Rg = 1 Ω ns Rise Time tr 51 Turn-Off Delay Time td( off) 45 Fall Time tf 51 Tur n-On Delay Time td( on) VDD = 10 V , RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V , Rg = 1 Ω Rise Time tr 18 Turn-Off Delay Time td( off) 60 110 Fall Time tf 30 Drain -Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 60 A Pulse Diode Forward Currenta ISM 80 Body Diode V oltage VSD IS = 4 A 0.72 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 10
0 A/µs, TJ = 25 °
C 33 50 ns Body Diode Reverse Recovery Charge Qrr 25 40 nC Reverse Recovery Fall Time ta 16 ns Re verse Recovery Rise Time tb 17 D56/ www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted Outp ut Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0.0 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS =1 0t h ru 4 V VGS =3 V 0.0015 0.003 0.0041 0.0024 0.0027 0.0030 4 2 8 42 56 70 - On -Resistance (Ω)RDS( on) ID - Drain Current (A) VGS =1 VGS =4 . 5V 6 3 2 4 8 64 80 - Gate -to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS =2 VDS =1 VDS =1 ID =1 Tran sfer Characteristics Capacitance On-Resistance vs. Junction Temperature 2345 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID TC = 25 °C TC = 125 °C TC = - 55 °C Crss 1200 2400 3600 4800 6000 6 12 18 24 30 Cis s VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.7 0.9 1.1 1.3 1.5 1.7 50 - 25 0 25 50 75 100 125 150 TJ -J unction Temperature (°C) (Normalized) - On -ResistanceRDS(o ID =2 VGS =4 . 5V VGS =1 D56/ www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Sou rce-Drain Diode Forward Voltage Threshold Voltage 0.0 VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS( th) TJ - Temperature (°C) ID =5m A On-Resista nce vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.002 0.004 0.006 0.008 0.010 012 34567 8 91 0 - On -Resistance (Ω)RDS(o VGS - Gate-to-Source Voltage (V) TJ =2 5 ° C TJ = 125 °C 120 160 200 0 111 0 0 .00 .01 Time (s) Power (W) 0.1 Safe Op erating Area, Junction-to-Ambient 0.01 100 100 0.01 Drain Current (A)ID 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS (on) is specified s ms 100 ms 0.1 1 10 TA = 25 °C Single Pulse Limited byR DS(on)* DC s BVDSS Limited D56/ www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted The power dissipation P D is b ased on T J(max ) = 15 0 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 102 136 170 2 55 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) I D - Drain Current (A) Package Limited Pow er, Junction-to-Case 100 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Po wer, Junction-to-Ambient 0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) D56/ www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Norm alized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM Duty Cycle, D = 2. Per Unit Base = RthJA = 65 °C/W 3. TJM -T A =P DMZthJA(t) Surface Mounted Duty Cycle = 0.5 0.02 N ormalized Thermal Transient Impedance, Junction-to-Case 0.1 0.01 0.2 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 10-3 10-2 110-110-4 0.05 0.02 Single Pulse 0.1 D56/ www.daysemi.jp
- Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347
Package Information
OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to IndexRe turn to Index Application Note
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