DTSP1204

DTSP1204 DINTEK | Alldatasheet

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Technical content

V DS (V) I D (A) a Q g (TYP.) ABSOLUTE MAXIMUM RATINGS A = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS Continuous Drain Current (T J = 150 °C) T C = 25 °C I D A T C = 70 °C T A = 25 °C T A = 70 °C Pulsed Drain Current (t = 300 μs) I DM Continuous Source-Drain Diode Current T C = 25 °C I S T A = 25 °C Single Pulse Avalanche Current L = 0.1 mH I AS Single Pulse Avalanche Energy E AS mJ Maximum Power Dissipation T C = 25 °C P D W T C = 70 °C T A = 25 °C T A = 70 °C Operating Junction and Storage Temperature Range T J , T stg -55 to 150 Soldering Recommendations (Peak Temperature) d, e 260 TH ERM AL R ESISTAN CE R ATING S PARAMETER T SYMBOL YPICAL UNIT MAXIMUM Maximum Junction-to-Ambient b, f t R 10 s thJA °C/W Maximum Junction-to-Case (Drain) R Steady State thJC POL Applications Battery Management

FEATURES

100 % R g and UIS tested ESD Protection Diode Embedded

APPLICATIONS

0.0021 at V GS 4.5 V DTSP1204 www.din-tek.jp Dual N-Channel 12-V (D-S) MOSFET 9.0 b, c 5.4 b, c G S N-Channel MOSFET S N-Channel MOSFET G S G S Pin 1 Pin 1 G CSP-6 Dual Pin Configuration Battery Protection Applications R DS(on) ) TYP. 0.0032 at V GS .5 V 31 nC 105 5.2 b, c 2.1 b, c 1.3 b, c Notes Based on T C = 25 °C. Surface mounted on 1" x 1" FR4 board. t = 10 s. The CSP-6 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. Maximum under steady state conditions is 70 °C/W. 8.9 10.2

a. Puls e te st; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not su bject to production testing. c. T CASE = 25 °C. Expected voltage stress during 100 % UIS test. Production da talog is not available. Stresses beyond those l i sted under “Absolute Maximum Ratings” ma y cause permanent damage to th e device. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. Exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. SPECIFICATIONS J = 25 °C, unles s ot herwise noted) PARAMETER SYMBO L T EST COND ITIONS UNIT MAX. TYP. MIN. Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 μA V V DS Temperature Coefficient V DS J I D = 250 μA 2 0 mV/° C V GS(th) Temperature Coefficient V GS(th) J - 4 . 6 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 μA V Gate-Source Leakage I GSS Zero Gate Voltage Drain Current I DSS μA On-State Drain Current a I D(on) V DS

5 V, V

= 10 V A Drain-Source On-State Resistance a R DS(on) Dynamic b Input Capacitance C iss pF Output Capacitance C oss Reve rse Transfer Capacitance C rss Total Gate Charge Q g nC Gate-Source Charge Q gs Gate-Drain Charge Q gd Gate Resi sta nce R g f = 1 MHz 1.60 Turn-On D e lay Time t d(on) ns Rise Time t r Turn-Off D elay Time t d(off) Fall Time t f Dra i n-S o ur ce Bod y Dio d e Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C A Pu lse Diode Forward Current a I SM Body Dio de Voltage V SD I S = 3 A V 1.2 0.70 DTSP1204 www.din-tek.jp V DS = 0 V, V GS V V DS 12 V V GS = 0 V V DS 10 V V GS = 0 V, T J = 55 ± 10 μA V GS 4.5 I D = 6 A V GS V, I D = 6A 0.0021 0.0032 0.0028 0.0059 V DS = 6 V, V GS = 0 V, f = 1 MHz 3050 1010 603 V DS = 6 V, V GS = 4.5 V, I D = 6 A V DD = 6 V, R L = 1.5 I D

6 A, V

= 4.5 V, R g = 1 180 105

T ERISTICS (25 °C, unless otherwise noted) Output C haracteristics On-R esist ance vs. Drain Current Gate Charge Transf e r Characteristics Capacitance On-Resistance vs. Junction Temperature I D Drain Curr en t (A) V D S - Drain-to- S ource Voltage (V) V GS .5 V = 1 V GS thru 2.5 V = 4.5 V R D S (on) - On-Re s i s tance(mΩ I D - Drain Current V GS V V GS V V GS G ate-to- S ource Voltage (V) Q g - Total G ate Charge (nC) I D - Drain Current (A) V GS G ate-to- S ource Voltage (V) T C = 25 C T C 125 C T C C C - Capacitance (pF) V D S - Drain-to- S ource V oltage (V) C i ss C o ss C r ss 150 125 100 - 25 - 50 R D S (on) - On-Re s i s tance (No rmalized) T J - Junction Temperature ( I D V GS .5 V = 4 V GS .5 V = 2 V GS 0.0 0.25 0.5 0.75 1.0 1.25 1.5 0.0 0.9 0.8 1.1 1.0 1.3 1.2 DTSP1204 www.din-tek.jp = 0.5 V 1.0 2.0 3.0 4.0 5.0 800 1600 2400 3200 4000 I D =6 A V D S = 6 V A

(25 °C, unless otherwise noted) S o urce -Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area 0.001 0.01 0.1 100 I S S ource Current (A V S D S ource-to- D rain Voltage (V) T J = 15 C T J = 25 C - 1. - 0 - 0.4 - 0.1 0.2 0.5 150 125 100 - 25 - 50 V GS (th) - Variance (V T J - Tem p erature ( I D = 2 μA I D 5 m A 012345 R D S (on - On Re s i s tance (mΩ) V GS G ate-to- S ource Voltage (V T J 125 C T J = 25 C I D = 6 A 0.01 0.001 0.1 Po wer (W) Time ( s 0.01 0.1 100 1000 0.01 0.1 100 I D - Dr ain Current (A) V D S - Dr a in-to- S ource Voltage (V) * V GS > mi ni mum V GS at which R D S (on i s s pecified 00 m s Limited by R D S n o 1 m s I M D ed it m Li T A = 2 S u P le ing l s e D BV S S i L mi ted m s s s DC I D d e it im L 100 μ s DTSP1204 www.din-tek.jp

(25 °C, unless otherwise noted) Current D e rating* Power, Junction-to-Case Power, Junction-to-Ambient * The power di ssipati on P D is based on T J (max.) = 150 °C, using junction-to-case ther mal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the cu rrent rating, when this rating falls below the package limit. 150 125 100 I D - Dr ain Current (A) T C - Ca s e Temperatur e 75 100 125 150 Po wer (W) T C - C a s e Temperatur e 0.0 0.5 1.0 1.5 2.0 2.5 75 100 125 150 Po wer (W) T A - A m bient Temperature ( DTSP1204 www.din-tek.jp

(25 °C, unless otherwise noted) N o rm alized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 Nor m alized Effective Tran s ient Thermal Impedance Sq uare Wave P u l s e Duration ( s e = 0. l y t y t D S l ing P e l u s e t t te No s P DM Duty le, yc C D = a t B Uni Per s R thJA T JM A DM Z hJA t (t) t t S urfa ce M ed nt ou 0.1 0.0001 0.001 0.01 0.1 Nor m alized Effective Tran s ient Thermal Impedance Sq uare Wave Pu l s e Duration ( s e ycl C Duty 0.2 0.0 S ingle Pu l s e DTSP1204 www.din-tek.jp

Package Information

www.din-tek.jp Symbol Dimension In Millimeters Dimension In Inches Min Normal Max Min Normal Max A 0.320 --- 0.380 0.013 --- 0.015 --- --- 0.005 --- --- 0.000 D 3.000 3.050 3.100 0.118 0.120 0.122 E 2.000 2.050 2.100 0.079 0.081 0.083 b 0.220 0.250 0.280 0.009 0.010 0.011 0.320 0.350 0.380 0.013 0.014 0.015 L 0.975 1.005 1.035 0.038 0.040 0.041 0.095 0.145 0.195 0.004 0.006 0.008 0.400 0.450 0.500 0.016 0.018 0.020 e 0.800REF 0.031REF 0.875BSC 0.035BSC CSP-6 Pad Dual PACKAGE INFORMATION

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