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Document Number: 69958 S-83053-Rev. B, 29-Dec-08 www.daysemi.jp New Product N-Channel 60-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Available  TrenchFET ® Power MOSFET  100 % R g Tested  100 % UIS Tested

APPLICATIONS

 Battery Switch  DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 0.156 at VGS = 10 V 2.3 2.3 nC 0.192 at VGS = 4.5 V 2.1 G S D Top View TO-236 (SSOT23) DTS6400 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 130 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 VGate-Source Voltage V GS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 2.3 A TC = 70 °C 1.8 TA = 25 °C 1.9b, c TA = 70 °C 1.5b, c Pulsed Drain Current IDM 8 Continuous Source-Drain Diode Current TC = 25 °C IS 1.39 TA = 25 °C 0.91b, c Avalanche Current L = 0.1 mH IAS 6 Single-Pulse Avalanche Energy E AS 1.8 mJ Maximum Power Dissipation TC = 25 °C PD 1.66 WTC = 70 °C 1.06 TA = 25 °C 1.09b, c TA = 70 °C 0.7b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d ≤ 5 s R thJA 90 115 °C/WMaximum Junction-to-Foot (Drain) Steady State R thJF 60 75 DTS00 www.daysemi.jp

www.daysemi.jp D ocument Number: 69958 S-83053-Rev. B, 29-Dec-08 New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA 60 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 55 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µAVDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) V DS ≥ 5 V, VGS = 10 V 8A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 1.9 A 0.130 0.156 ΩVGS = 4.5 V, ID = 1.7 A 0.160 0.192 Forward Transconductancea gfs VDS = 15V, ID = 1.9 A 5S Dynamicb Input Capacitance Ciss VDS = 30 V, VGS = 0 V, f = 1 MHz 190 pF Output Capacitance Coss 26 Reverse Transfer Capacitance Crss 15 Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 1.9 A 4.5 6.8 nCVDS = 30 V, VGS = 4.5 V, ID = 1.9 A 2.3 3.5 Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1 Gate Resistance Rg f = 1 MHz 0.6 2.8 5.6 Ω Tur n-On Delay Time td(on) VDD = 30 V, RL = 20 Ω ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω ns Rise Time tr 10 15 Turn-Off Delay Time td(off) 10 15 Fall Time tf 71 0 . 5 Tur n-On Delay Time td(on) VDD = 30 V, RL = 20 Ω ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω 15 23 ns Rise Time tr 16 24 Turn-Off Delay Time td(off) 11 17 Fall Time tf 11 17 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 1.39 A Pulse Diode Forward Currenta ISM 8 Body Diode Voltage VSD IS = 1.5 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C 15 23 ns Body Diode Reverse Recovery Charge Qrr 10 15 nC Reverse Recovery Fall Time ta 12 ns Reverse Recovery Rise Time tb 3 DTS00 www.daysemi.jp

Document Number: 69958 S-83053-Rev. B, 29-Dec-08 www.daysemi.jp New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 012345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS =1 0t h ru 5 V VGS =2 V VGS =3 V VGS =4 V 0.06 0.12 0.18 0.24 0.30 0246 8 10 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V 012345 ID =1 . 9A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS =4 8V VDS =3 0V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D TC = 125 °C TC =2 5 ° C TC = - 55 °C Crss0 120 180 240 300 0 1 02 03 04 05 06 0 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 T J -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS =1 0V ,I D =1 . 9A VGS =4 . 5V,I D =1 . 7A DTS00 www.daysemi.jp

www.daysemi.jp D ocument Number: 69958 S-83053-Rev. B, 29-Dec-08 New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage TJ = 150 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S TJ = 25 °C 0.1 1.2 1.5 1.8 2.1 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.10 0.15 0.20 0.25 0.30 0.35 34567 8 91 0 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =1 . 9A )W( r ewo P Time (s) 1 600 10 0.1 0.01 100 T A = 25 °C Single Pulse Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID 0.1 0.1 1 10 TA = 25 °C Single Pulse 1m s 10 ms 100 ms 0.01 1s ,1 0s DCBVDSS Limited 100 100 µs Limited byR DS(on)* DTS00 www.daysemi.jp

Document Number: 69958 S-83053-Rev. B, 29-Dec-08 www.daysemi.jp New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.6 1.2 1.8 2.4 3.0 0 2 55 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) I D - Drain Current (A) Power Derating, Junction-to-Case 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 0 25 50 75 100 125 150 T A -A mbient Temperature (°C) Power (W) DTS00 www.daysemi.jp

www.daysemi.jp D ocument Number: 69958 S-83053-Rev. B, 29-Dec-08 Normalized Thermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Junction-to-Foot 10 -3 10 -2 1 10 10 -1 10 -4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T DTS00 www.daysemi.jp THERMAL RATINGS (TA = 25 ° C, unless otherwise noted)

Package Information

Document Number: 71196 09-Jul-01 www.GD\\VHPLMS SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

Document Number: 72609 www.daysemi.jp Revision: 21-Jan-08 1 APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to IndexReturn to Index

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