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Document Number: 67030 S10-2250-Rev. A, 04-Oct-10 www.daysemi.jp New Product N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a Qg (Typ.) 0.042 at VGS = 10 V 5.6 2.9 nC 0.051 at VGS = 4.5 V 5.1 Notes: a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 VGate-Source Voltage V GS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 5.6a A TC = 70 °C 4.5 TA = 25 °C 4.3b, c TA = 70 °C 3.5b, c Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current TC = 25 °C IS 1.75 TA = 25 °C 1.04b, c Maximum Power Dissipation TC = 25 °C PD 2.1 WTC = 70 °C 1.3 TA = 25 °C 1.25b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °CSoldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t  5 s R thJA 80 100 °C/WMaximum Junction-to-Foot (Drain) Steady State R thJF 40 60

FEATURES

 Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  100 % R g Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 DC/DC Converters  Load Switch  Portable and Consumer Applications D G S N-Channel MOSFET '76 G S D Top View TO-236 (SOT-23) DTS4500 www.daysemi.jp

www.daysemi.jp Document Number: 67030 S10-2250-Rev. A, 04-Oct-10 New Product Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 39 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 4.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 µA VDS = 40 V, VGS = 0 V, TJ = 70 °C 10 On-State Drain Currenta ID(on) V DS 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS 10 V, ID = 4.3 A 0.035 0.042 VGS 4.5 V, ID = 3.9 A 0.041 0.051 Forward Transconductancea gfs VDS = 20 V, ID = 4.3 A 17 S Dynamicb Input Capacitance Ciss VDS = 20 V, VGS = 0 V, f = 1 MHz 340 pFOutput Capacitance Coss 60 Reverse Transfer Capacitance Crss 30 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 4.3 A 5.8 9 nC VDS = 20 V, VGS = 4.5 V, ID = 4.3 A 2.9 6 Gate-Source Charge Qgs 1.1 Gate-Drain Charge Qgd 0.9 Gate Resistance Rg f = 1 MHz 0.6 3.3 6.6  Tur n-On Delay Time td(on) VDD = 20 V, RL = 5.7  ID  3.5 A, VGEN = 4.5 V, Rg = 1  12 20 ns Rise Time tr 50 75 Turn-Off Delay Time td(off) 10 20 Fall Time tf 8 16 Tur n-On Delay Time td(on) VDD = 20 V, RL = 5.7  ID  3.5 A, VGEN = 10 V, Rg = 1  71 4 Rise Time tr 20 30 Turn-Off Delay Time td(off) 14 21 Fall Time tf 8 16 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S TC = 25 °C 1.75 A Pulse Diode Forward Current ISM 20 Body Diode Voltage VSD IS = 3.5 A, VGS 0 V 0.851 . 2 V Body Diode Reverse Recovery Time trr IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 15 23 ns Body Diode Reverse Recovery Charge Qrr 71 4 n C Reverse Recovery Fall Time ta 11 ns Reverse Recovery Rise Time tb 4 DTS4500 www.daysemi.jp

Document Number: 67030 S10-2250-Rev. A, 04-Oct-10 www.daysemi.jp New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge VGS =1 0Vt h r u4V VGS =3V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 VGS =4 . 5V VGS =1 0V RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 0123456 ID =4 . 3A VDS =2 0V VDS =1 0V VDS =3 2V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature TC = 125 °C TC = 25 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Crss 180 270 360 450 0 5 10 15 20 Ciss Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.65 0.85 1.05 1.25 1.45 1.65 - 50 - 25 0 25 50 75 100 125 150 VGS =4 . 5V ;ID =3 . 9A VGS =1 0V ;I D =4 . 3A TJ - Junction Temperature (°C) (Normalized) RDS(on) - On-Resistance DTS4500 www.daysemi.jp

www.daysemi.jp Document Number: 67030 S10-2250-Rev. A, 04-Oct-10 New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 100 0 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A) 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA VGS(th) (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.02 0.04 0.06 0.08 0.10 2468 1 0 TJ = 25 °C TJ = 125 °C ID =4 . 3A RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 0.001 0.01 0.1 1 10 100 Time (s) Power (W) Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse 1s ,1 0s Limited by RDS(on)* BVDSS Limited 1m s 100 μs 10 ms DC 100 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) DTS4500 www.daysemi.jp

Document Number: 67030 S10-2250-Rev. A, 04-Oct-10 www.daysemi.jp New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 1.5 3.0 4.5 6.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power Derating, Junction-to-Foot 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Junction-to-Ambient 0.3 0.6 0.9 1.2 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) DTS4500 www.daysemi.jp

www.daysemi.jp Document Number: 67030 S10-2250-Rev. A, 04-Oct-10 Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 10 00010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 125 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 1000 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1

0.05 Single Pulse

0.02 DTS4500 www.daysemi.jp THERMAL RATINGS (TA = 25 ° C, unles s ot herwise noted) Note Normalized Thermal Transient Impedance, Junction-to-Ambient

  • The characteristics shown in the two gr aphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 ° C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal im pedance charac teristics which are de veloped fr om empirical m easurements. The la tter is va lid for the part mounted on printed circuit board - FR 4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions.

Package Information

Document Number: 71196 09-Jul-01 www.GD\\VHPLMS SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

Document Number: 72609 www.daysemi.jp Revision: 21-Jan-08 1 APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to IndexReturn to Index

www.daysemi.jp Revision: 02-Oct-12 1 Document Number: 72610 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.