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Technical content

FEATURES

/C0068TrenchFET/C0114 Power MOSFET

APPLICATIONS

/C0068Direct Logic-Level Interface: TTL/CMOS /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Solid-State Relays N-Channel16 −V (D−S) MOSFET PRODUCT SUMMARY V (BR)DSS r DS( ) I D (A) V (BR)DSS Min (V) r DS(on) Max (/C0087) V GS(th) (V) DTS03K16 DTS03K16A 1.0 @ V GS = 10 V 1 0 to 3 0 0.42 0.64 1.4 @ V GS = 4.5 V 1.0 to 3.0 0.35 0.53 ABSOLUTE MAXIMUM RATINGS (T A = 25/C0095C UNLESS OTHERWISE NOTED) Limit Parameter Symbol DTS03K16 DTS03K16A Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS /C00348 V Continuous Drain Current J = 150/C0095C) T A = 25/C0095C I D 0.42 0.64 Continuous Drain Current J = 150/C0095C) T A = 70/C0095C I D 0.33 0.51 A Pulsed Drain Current a I DM 0.8 1.5 Power Dissipation T A = 25/C0095C P D 0.35 0.8 W Power Dissipation T A = 70/C0095C P D 0.22 0.51 W Thermal Resistance, Junction-to-Ambient R thJA 357 156 /C0095C/W Operating Junction and Storage Temperature Range T J , T stg −55 to 150 /C0095C Notesa. Pulse width limited by maximum junction temperature. G S D Top View TO-236 (SOT-23) N-Channel MOSFET G D S DTS, www.daysemi.jp

SPECIFICATIONS (T A = 25/C0095C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = 0 V, I D = 10 /C0109A V Gate-Threshold Voltage V GS(th) V DS = V GS , I D = 0.25 mA 1.0 2.0 3.0 V Gate-Body Leakage I GSS V DS = 0 V, V GS = /C003420 V /C0034100 nA Zero Gate Voltage Drain Current I DSS V DS = 16 V, V GS = 0 V /C0109A Zero Gate Voltage Drain Current I DSS V DS = 16 V, V GS = 0 V, T J = 55/C0095C /C0109A On State Drain Current a I D( ) V DS = 10 V V GS = 10 V DTS03K16 0.5 A On-State Drain Current a I D(on) V DS = 10 V, V GS = 8 V DTS03K16A 0.8 A Drain Source On Resistance a r DS(on) V GS = 4.5 V, I D = 0.1 A 0.8 1.4 /C0087 Drain So u rce On Resistance a r DS(on) V GS = 10 V, I D = 0.3 A 0.47 1.0 /C0087 Forward Transconductance a g fs V DS = 10 V, I D = 0.3 A 550 mS Diode Forward Voltage V SD I S = 0.3 A, V GS = 0 V 0.85 1.2 V Dynamic b Total Gate Charge Q g 1000 1500 Gate-Source Charge Q gs V DS = 16 V, V GS = 10 V I D /C0094 0.3 A 205 pC Gate-Drain Charge Q gd I D /C0094 0 3 A 200 Gate Resistance R g /C0087 Turn On Time t d(on) 4.5 Turn-On Time t r V DD = 15 V, R L = 50 /C0087 I D /C0094 03 A V GEN = 10 V ns Turn Off Time t d(off) I D /C0094 0.3 A V GEN = 10 V R G = 6 /C0087 ns T urn- Off Ti me t f 6.3 Notes a. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V GS = 10 thru 5 V T J = 125/C0095C −55/C0095C 3 V 25/C0095C Output Characteristics Transfer Characteristics V DS − Drain-to-Source Voltage (V) − Drain Current (A)I D V GS − Gate-to-Source Voltage (V) − Drain Current (A)I D 4 V 2 V DTS, www.daysemi.jp

TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0.0 0.2 − On-Resistance (rDS(on) /C0087) 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.3 0.6 0.9 1.2 1.5 0.0 0.1 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 16 V ID = 0.3 A ID − Drain Current (A) VGS = 4.5 V ID = 0.1 A VGS = 8 V Gate Charge On-Resistance vs. Drain Current − Gate-to-Source Voltage (V) Qg − Total Gate Charge (nC) C − Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature TJ − Junction Te mperature (/C0095C) (Normalized) − On-Resistance (rDS(on) /C0087) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 4 8 12 14 16 TJ = 150/C0095C TJ = 25/C0095C ID = 0.3 A 0.1 0.001 Source-Drain Diode Forward V oltage On-Resistance vs. Gate-to-Source Voltage − On-Resistance (rDS(on) /C0087) VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) − Source Current (A)I S VGS = 4.5 V VGS = 8 V ID = 0.3 A 0.01 DTS, www.daysemi.jp

TYPICAL CHARACTERISTICS (25 /C0095C UNLESS NOTED) 10−3 10−2 1 10 60010−110−4 100 −0.6 −0.4 −0.2 −0.0 0.2 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 /C0109A 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold V oltage Variance (V)VGS(th) TJ − Temperature (/C0095C) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, DTS03K16 Only) Square W ave Pulse Duration (sec) Normalized Effective T ransient Thermal Impedance Safe Operating Area (TO-236, DTS03K16 Only) VDS − Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 0.001 1 ms − Drain Current (A)I D

0.01 TA = 25/C0095C

Safe Operating Area (TO-226AA, DTS03K16A Only) ID(on) Limited rDS( on) Limited BVDSS Limited VDS − Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 0.001 1 1 ms − Drain Current (A)I D 10 sID(on) Limited IDM Limited rDS( on) Limited IDM Limited BVDSS Limited DTS, www.daysemi.jp

TYPICAL CHARACTERISTICS (25 /C0095C UNLESS NOTED) 10−3 10−2 1 10 60010−110−4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, DTS03K16A Only) Square W ave Pulse Duration (sec) Normalized Effective T ransient Thermal Impedance DTS, www.daysemi.jp

Package Information

www.GD\\VHPLMS SOT-23 (TO-236): 3-LEAD b EE S e e D A A A C Seating Plane 0.10 mm 0.004" C C L L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.0 35 0.044 A 0.01 0.10 0.0004 0.004 A 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

www.daysemi.jp APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to Index Return to Index

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