DTQ6403-B

DTQ6403-B DINTEK | Alldatasheet

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Technical content

APPLICATIONS

• Load Switch PRODUCT SUMMARY V DS (V) R DS(on) Ω I D (A) a Q g (Typ.) - 40 S G D P-Channel MOSFET Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. The DFN5x6 is a leadless pac kage. The end of the lead terminal i s exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 °C/W. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS - 40 V Gate-Source Voltage V GS ± 20 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D A T C = 70 °C T A = 25 °C T A = 70 °C Pulsed Drain Current I DM Continuous Source-Drain Diode Current T C = 25 °C I S T A = 25 °C Single Pulse Avalanche Current L = 0.1 mH I AS Single Pulse Avalanche Energy E AS mJ Maximum Power Dissipation T C = 25 °C P D W T C = 70 °C T A = 25 °C T A = 70 °C Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 Soldering Recommendations (Peak Temperature) d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Maxim Typical Unit um Maximum Junction-to-Ambient b, f t 10 s R thJA °C/W Maximum Junction-to-Case (Drain) Steady State R thJC 0.9 Top View PIN1 DFN5X6 Top View Bottom View

FEATURES

R g and UIS Tested DT-Trench Power MOSFET P-Channel 0-V (D-S) MOSFET DTQ6403-B www.din-tek.jp 0.00 at V GS = - 10 V 0.00 at V GS = - 4.5 V - 60 - 60 a - 50 a b, c - 8 b, c - 6 a - 15 c - 58 187 5.15 c c 1.5 nC

Notes: P ulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not s ubject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” ma y cause permanent damage to the device. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T J = 25 °C, un less otherwise noted Parameter Sy mbo l Test Conditions Min. Unit Max. Typ. Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = - 250 µA - 40 V V DS Temperature Coefficient Δ V DS J I D = - 250 µA mV/°C V GS(th) Temperature Coefficient Δ V GS(th) J 6.5 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = - 250 µA - 1.0 V 3.0 Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 20 V nA ± 100 Zero Gate Voltage Drain Current I DSS V DS = - 32 V , V GS = 0 V - 1 µA V DS = - 32 V, V GS = 0 V, T J = 55 °C - 10 On-State Drain Current a I D(on) V DS = - 5 V, V GS = - 10 V A Drain-Source On-State Resistance a R DS( on) V GS = - 10 V, I D = - 20 A Ω V GS = - 4.5 V, I D = - 15 A Forward Transconductance a g fs V DS = - 15 V, I D = - 20 A S Dynamic b Input Capacitance C iss V DS = - 32 V, V GS = 0 V, f = 1 MHz pF Output Capacitance C oss Reverse Transfer Capacitance C rss Total Gate Charge Q g V DS = - 32 V, V GS = - 10 V, I D = - 20 A 150 nC V DS = - 32 V, V GS = - 4.5 V, I D = - 15 A Gate-Source Charge Q gs Gate-Drain Charge Q gd Gate Resistance R g f = 1 MHz Ω Tur n-On Delay Time t d(on) ns Rise Time t r Turn-Off Delay Time t d(off) Fall Time t f Tur n-On Delay Time t on) Rise Time t r Turn-Off Delay Time t d(off) Fall Time t f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C A Pulse Diode Forward Current a I SM Body Diode Voltage V SD I S = - 5 A - 0. V - 1.2 Body Diode Reverse Recovery Time t rr ns Body Diode Reverse Recovery Charge Q rr nC Reverse Recovery Fall Time t a ns Re verse Recovery Rise Time t b DTQ6403-B www.din-tek.jp 0.00 0.00 - 60 0.00 0.013 - 35 1089 7750 302 2.0 130 217 - 60 - 240 120 136 V DD = - 32 V, R L = 15 Ω I D - 20 A, V GEN = - 10 V, R g = 1 Ω V DD = - 32 V, R L = 15 Ω I D - 15 A, V GEN = - 4.5 V, R g = 1 Ω I F = 20 A, dI/dt = 100 A/µs, T J = 25 °C

25 °C, unless otherwise noted Outp ut Charac teristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 100 0.0 0.5 2.0 1.0 1.5 V GS V DS Drain-to-So u rce V oltage ( V - Drain C u rrent (A) I D 100 V GS =-10 V V S G =-4 . 5 V - On Resistance ( m Ω R DS(on 60 90 120 V D - Gate to-So u rce V oltage ( V Q g T otal Gate Charge (nC) V GS Tran sfer Ch aracteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 1.0 1.2 0.0 0.5 3.0 1.0 1.5 2.0 2.5 T C C 25 ° T C 125 °C V DS Drain -to-So u rce V oltage ( V - Drain C u rrent (A) I D T C - 55 °C 3000 6000 9000 1 2 1 C is s C oss C rss V DS r a i n - t o - S o u rce V oltage ( V C - Capacitance (pF) 0.6 0.9 1.2 1.5 150 125 0 25 50 75 100 - 25 V GS I D T J u nction T emperat u re (°C) N ormalized) - On Resistance R DS(on DTQ6403-B www.din-tek.jp - 1.5 V V GS -10thr u V I D Drain C u rrent (A) I D 20 A S V 20 A 10 V

25 °C, unless otherwise noted Sou r ce-Drain Diode Forward Voltage Threshold Voltage 0.2 0.0 0.4 0.6 1.2 1.0 0.01 0.001 0.1 100 T J 0 °C = 15 T J 25 °C V SD -S o u rce -to-Drain V oltage ( V - So u rce C u rrent (A) I S - 0.4 0.2 0.0 0.2 0.4 0.6 150 125 100 - 25 - 50 I D 250 µ A I D 1m A V ariance V V GS(t T J - T emperat u re (°C) On-Resistan ce vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 01234567 91 0 T J =2 5 C T J 125 °C - On- R esistance ( m Ω R DS(on) V GS - G ate -to-So u rce V oltage ( V 0 1 0 . Time (s) Po w er ( W 0.1 Safe Oper a ting Area, Junction-to-Ambient 100 0.1 100 1000 0.1 T u e ls 10 s Limited b yR S(o D B V d imite L S DS s m µ s ms 100 ms DC V DS - Drain to-So u rce V oltage ( V V GS > minim u m V GS at w hich R DS(on) is specified - Drain C u rrent (A) I D DTQ6403-B www.din-tek.jp 100 150 200 250 A 25 °C P Single

25 °C, unless otherwise noted * The po we r dissipation P D is ba se d on T J(max) = 150 ° C , using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 150 75 100 125 T C Case T emperat u re (°C) I D Drain C u rrent (A) Power, Ju nction-to-Case 100 1250 150 125 75 100 T C - Case T emperat u re (°C) Po w er ( W Powe Junction-to-Ambient 1.5 3.0 4.5 6.0 7.5 150 75 100 125 T A -A m b ient T emperat u re (°C) Po w er ( W DTQ6403-B www.din-tek.jp

25 °C, unless otherwise noted Norm alized T hermal Transient Im pedance, Junction-to-Ambient 1000 100 0.2 0.1 0.05 S qu are W a v eP u lse D u ration (s) N ormalized Ef fecti v e Transient Thermal Impedance 0.1 0.01 le Sing P u e ls t t N tes o P DM D u ty Cycle, D = e s Ba it Un Per = R thJA W T JM T A P DM Z thJA (t) t t S u r Mo e fac u nt ed D u ty e = cl Cy 0.0 No rmalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 D u t y Cycle = 0.5 S qu are W a v eP u lse D u ration (s) N ormalized Ef fecti v e Transient Thermal Impedance 0.1 0.01 e l Sing P u lse 0.02 0.05 DTQ6403-B www.din-tek.jp

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