DTQ3625

DTQ3625 DINTEK | Alldatasheet

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Technical content

0 V (D-S) MOSFET

FEATURES

Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 70 °C/W. d. Package limited. The &(0: is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. PRODUCT SUMMARY V DS R (V) DS(on) I ) Max. D Q (A) g (Typ.) d d S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS A = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 2 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D A T C = 70 °C T A = 25 °C T A = 70 °C Pulsed Drain Current (t = 100 μ I DM Continuous Source-Drain Diode Current T C = 25 °C I S T A = 25 °C Avalanche Current L = 0.1 mH I AS Single-Pulse Avalanche Energy E AS mJ Maximum Power Dissipation T C = 25 °C P D W T C = 70 °C T A = 25 °C T A = 70 °C Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Unit Maximum Typical Symbol Maximum Junction-to-Ambient a, c t d 10 s R thJA °C/W Maximum Junction-to-Case Steady State R thJC Top View DFN 3x3 EP Top View Bottom View Pin 1 Pin 1 Notebook Battery Packs Notebook Computers 8.5 d a, b nC Battery, Load and Adaptor Switches

APPLICATIONS

100 % R g and UIS Tested DT-Trench Power MOSFET 0.0 at V GS = - 10 V 0.0 at V GS = - 4.5 V ZZZGLQWHNMS d d a, b a, b 125 26.3 16.8 a, b a, b 5.1

Notes: a. Pulse test; pulse width d 300 μ s, duty cycle d 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the devi ce. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS J = 25 °C, unless otherwise noted) Parameter Unit Max. Typ. Min. Test Conditions Symbol Static Drain-Source Breakdown Voltage V DS V GS = 0, I D = - 250 μ A V V DS Temperature Coefficient V DS J I D = - 250 μ A - 2 mV/°C V GS(th) Temperature Coefficient V GS(th) J Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = - 250 μ A - 1 V Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 2 V nA ± 100 Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = 0 V - 1 μ A V DS = - V, V GS = 0 V, T J = 55 °C - 5 On-State Drain Current a I D(on) V DS t - 10 V, V GS = - 10 V A Drain-Source On-State Resistance a R DS(on) V GS = - 10 V, I D =- 5 A V GS = - 4.5 V, I D = - A Forward Transconductance a g fs V DS = - 10 V, I D =- 5 A S Dynamic b Input Capacitance C iss pF Output Capacitance C oss Reverse Transfer Capacitance C rss Total Gate Charge Q g nC Gate-Source Charge Q gs Gate-Drain Charge Q gd Gate Resistance R g f = 1 MHz Tur n-On Delay Time t d(on) ns Rise Time t r Turn-Off DelayTime t d(off) Fall Time t f Tur n-On Delay Time t d(on) Rise Time t r Turn-Off DelayTime t d(off) Fall Time t f Drain -Source Body Diode Characteristics I Continous Source-Drain Diode Current S T C = 25 °C A Pulse Diode Forward Current (100 μ I SM V Body Diode Voltage SD I S = - 3 A, V GS = 0 - 0.7 V Body Diode Reverse Recovery Time t rr I F = - A, dI/dt = 100 A/ μ s, T J = 25 °C Q Body Diode Reverse Recovery Charge rr t Reverse Recovery Fall Time a ns t Reverse Recovery Rise Time b 0.0 - 1.2 ns nC ZZZGLQWHNMS 0.0 0.0 0.0 V DS = - V, V GS = 0 V, f = 1 MHz V DS V GS = - 10 V, I D = - A V DS = - V, V GS = - 4.5 V, I D = - A 33.2 V D = - V, R L I D A, V GEN = - 10 V, R g = 1 V DD = - V, R L I D A, V GEN = - 4.5 V, R g = 1 125

(25 °C, unless oth erwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 5.0 4.0 3.0 2.0 1.0 0.0 I D - Drain Current (A) V DS - Drain-to-Source Voltage (V) V GS V V GS

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V 0.0 0.0 0.0 0.0 0.0 0.0 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) V GS 4.5 V V GS 10 V V GS - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V DS V I D A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 120 150 0.0 I D - Drain Current (A) V GS - Gate-to-Source Voltage (V) T C = 25 C T C = 12 C T C C 5600 7000 C - Capacitance (pF) V DS Drain- to- S ource Voltage (V) C iss C oss C rss 0.6 0.8 1.0 1.2 1.4 1.6 150 125 100 - 25 - 50 R DS(on) - On-Resistance (Normalized) T J - Junction Temperature ( I D 5 A V S G V 5 V ZZZGLQWHNMS GS V

(25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.001 0.01 0.1 100 1.2 1.0 0.8 0.6 0.4 0.2 0.0 I S - Source Current (A) V SD - Source-to-Drain V oltage (V) T J = 150 C T J C - 0.4 - 0.2 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 V GS(th) - Variance (V) T J - Temperature ( I D D On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.030 0.060 0.090 0.120 0.150 02468 1 0 R DS( on) - On-Resista nce (Ω) V GS - Gate-to-Source Voltage (V) T J = 125 C T J = 25 C I D 5 A 100 150 200 250 0.1 0.01 0.001 Power (W) Time (s) Safe Operating Area 0.01 0.1 100 1000 100 0.1 0.01 I D - Drain Current (A) V DS - Drain-to-Source Voltage (V) * V GS mi ni mum V GS at which R DS(on) is specified μ μ 100 ms R y b ed it Lim DS on s m I DM Limited T A = 2 C e s ul P le ing S ited m i L S DS V B ms 10 s s DC I D Limited μ - 250 A I = - 1 mA ZZZGLQWHNMS

(25 °C, unless otherwise noted) The power dissipation P D is based on T J(max.) = 15 0 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipat ion limit for cases where additional heatsinkin g is used. It is used to determine the current rating, when this rating falls be low the package limit. Current Derating* 100 150 125 I D - Drain Current (A) T C - Case Temperature ( ckage a ted by P mi Li Power, Juncti on-to-Case 0 25 50 75 100 125 150 Power (W) T C - Case Temperature ( Power Dera ting, Junction-to-Ambient 0 25 50 75 100 125 150 Power (W) T A - Ambient Tem perature ( ZZZGLQWHNMS

(25 ° C, unless otherwise noted) Normalized Thermal Transient I mpedance, Junction-to-Ambient 0.01 0.1 1000 100 0.1 0.01 0.001 0.0001 Normalized Effect ive Transient Thermal Impedance Square Wave Pulse Duration (s) e = 0. cl Cy ty Du ls u P le Sing e t t tes: No P DM D ycl C Duty Per R e as it B Un thJA T JM A M D Z thJA (t) t t ace Surf d te n ou M ZZZGLQWHNMS

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