DTQ3205

DTQ3205 DINTEK | Alldatasheet

Document overview

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Technical content

V (D-S) MOSFET

FEATURES

X Package - Small Footprint Area - Low On-Resistance

APPLICATIONS

 Load Switch, PA Switch, and Battery Switch for Portable Devices Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. See solder profile The DFN X is a leadless pa ckage. The end of the lead terminal is expos ed copper (not plated) as a result of the singulatio n process in manufacturing. A solder fillet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate botto m side solder interconnection. e. Rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. PRODUCT SUMM ARY V DS (V) R DS(on) ) (Max.) I D (A) Q g (Typ.) 0.0 at V GS = - 4.5 V a nC 0.0 at V GS = - 2.5 V a S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS A = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gat e -Source V o ltage V GS Continuous Drain Current (T J = 150 °C) T C = 25 °C I D a A T C = 70 °C a T A = 25 °C c T A = 70 °C c Pulsed Drain Current (t = 300 µs) I DM 200 Continuous Source-Drain Diode Current T C = 25 °C I S a T A = 25 °C c Maximum Power Dissipation T C = 25 °C P D W T C = 70 °C T A = 25 °C c T A = 70 °C c Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 Soldering Recommendations (Peak Temperature) d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, f t 5 s R thJA °C/W Maximum Junction-to-Case (Drain) Steady State R thJC DT Q 3205 www.din-tek.jp Top View DFN 3x3 EP Top View Bottom View Pin 1 ver.201CF DT-Trench Power MOSFET

Notes: a. Pulse test; pulse w i dth 300 µs, duty cycle 2 %. b. Guaranteed by design, not s ubject to production testing. St resses b e yond t hose list ed und er “Ab s olute Maximum Ratings” ma y cause permanent damage to the device. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS J = 25 °C, unless ot herwise noted) Parameter Symb ol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = - 250 µA V V DS Temperature Coefficient V DS J I D = - 250 µA - 11 mV/°C V GS(th) T emperature Coefficient V GS(th) J 2.7 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = - 250 µA - 0. V Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current I DSS V DS = - 12 V, V GS = 0 V - 1 µA V DS = - 12 V, V GS = 0 V, T J = 55 °C - 10 On-State Drain Current a I D (on) V DS - 5 V, V GS = - 4.5 V - 20 A Drain-Source On-State Resistance a R DS (on) V GS = - 4.5 V, I D = - A 0.005 V GS = - .5 V, I D = - A 0.005 V GS = - I D = - A 0.006 V GS = - .5 V, I D = - A 0.0065 Forward Transconductance a g fs V DS - 10 V, I D = - 18.5 A S Dy nam ic b Inpu t Capacita nce C iss V DS = - 10 V, V GS = 0 V, f = 1 MHz 4800 pF Output Capacitance C oss 850 Reverse Transfer Capacitance C rss 590 Total Gate Charge Q g V DS = - 6 V, V GS = - 8 V, I D = - 10 A nC V DS = - 6 V, V GS = - 4.5 V, I D = - 10 A Gate-Source Charge Q gs Gate-Drain Charge Q gd Gate Resistance R g f = 1 MHz Tur n-On Delay Time t d(on) V DD = - 6 V, R L = 0.75 I D - 8 A, V GEN = - 4.5 V, R g = 1 20 30 ns Rise Time t r 40 60 Turn-Off Delay Time t d(off) 65 100 Fall Time t f 40 60 Tur n-On Delay Time t d(on) V DD = - 6 V, R L = 0.75 I D - 8 A, V GEN = - 8 V, R g = 1 10 15 Rise Time t r 12 20 Turn-Off Delay Time t off) 70 105 Fall Time t f 40 60 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C A Pulse Diode Forward Current I SM 200 Body Diode Voltage V SD I S = - 8 A, V GS = 0 V 0.57 V Body Diode Reverse Recovery Time t rr I F = - 8 A, di/d t = 100 A/µs , T J = 25 ° C 40 60 ns Body Diode Reverse Recovery Charge Q rr 20 30 nC Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b DT Q 3205 www.din-tek.jp 0.00 0.00 0.00 0.00

S C, un le ss o therwise noted) Output Characteristics On-Resistance vs. Drain Current an d Gate Voltage Gate Charge V DS - Drain-to-So u rce V oltage ( V V GS = 5 thr u 2.5 V - Drain C u rrent (A) I D V GS = 1.5 V V GS = 1 V V GS = 2 V 0.0 0.0 0.0 0.0 0.0 0.0 16 24 32 40 I D - Drain C u rrent (A) - On-Resistance ( Ω R DS(on) V GS V V GS V Q g T otal Gate Charge (nC) I D = 10 A - Gate-to-So u rce V oltage ( V V GS V DS = 9.6 V V DS = 6 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperatur e V GS - Gate-to-So u rce V oltage ( V T C = 25 °C - Drain C u rrent (A) I D T C = 125 °C T C = - 55 °C C rss V DS - Drain-to-So u rce V oltage ( V 500 1000 000 000 0369 1 C oss C iss C - Capacitance (pF) T J - J u nction Temperat u re (°C) 002 0.004 0.006 0.008 - 50 - 25 0 25 50 75 100 125 150 V GS V V GS = 4.5 I D 8.5 A DT Q 3205 www.din-tek.jp R DS(on) - On-Resistance N ormalized)

TYPICAL CHARACTERISTICS (25 °C, unless ot herwise noted) Soure-Drain Diod e Forward Voltage Threshold Voltage TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = 25 °C 100 TJ - Temperature (°C) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) On-Resistance vs. Gate-to-Source Voltage Single Pu lse Power, Junction-to-Ambient VGS - Gate-to-Source Voltage (V) 0.002 0.004 0.006 0.008 012345 ID = 8.7 A TA = 125 °C TA = 25 °C Power (W) Time (s) 10 10000.10.010.001 1001 100 Safe Operating Area, Junction-to-Am bient 0.1 1 10 100 0.1 100 1 ms - Drain Current (A)I D

1 TA = 25 °C

VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Limited by RDS(on)* 100 µs BVDSS Limited 1000 100 ms 1 s 10 s DTQ3205 www.din-tek.jp RDS(on) - On-Resistance (Ω)

TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Curren t Derating* 100 120 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Package Limited Power Derating 100 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) DTQ3205 www.din-tek.jp Part Marking Information Pin 1 Pin 1 DC2603 PA1MV3 DTQ3205 DHXXQ Two MARK

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transi ent Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 0.02 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Normalized Thermal Tran sient Impedance, Junction-to-Case 10-3 10-210-4 0.1 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.02 Single Pulse 0.05 10-1 DTQ3205 www.din-tek.jp

Package Information

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