DTQ2607 DINTEK | Alldatasheet

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Technical content

P-Channel 60-V (D-S) MOSFET

FEATURES

  • Fast Switching

APPLICATIONS

  • Load Switches
  • Half-Bridge Motor Drives
  • High Voltage Non-Synchronous Buck Converters PRODUCT SUMMARY V DS (V) R DS(on) D (A) - 60 0.065 at V GS = - 10 V at V GS = - 4.5 V S G D P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. The &(0: is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS - 60 V Gate-Source Voltage V GS ± 20 Continuous Drain Current (T J = 150 °C) a T A = 25 °C I D A T A = 70 °C - 4.6 - 2.9 Pulsed Drain Current I DM - 30 Continuous Source Current (Diode Conduction) a I S - 3.2 - 1.3 Maximum Power Dissipation a T A = 25 °C P D 3.8 1.5 W T A = 70 °C 2.0 0.8 Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 Soldering Recommendations (Peak Temperature) b, c 260 THERMAL RESISTANCE RATINGS Parameter Sym bol T ypical Maximum Unit Maximum Junction-to-Ambient a t d 10 s R thJA °C/W Steady State Maximum Junction-to-Case (Drain) Steady State R thJC 1.9 2.4 ZZZGLQWHNMS ')1[ 7RS9LHZ %RWWRP9LHZ Pin 1 D D G D D S D S Pin 1 DT-Trench Power MOSFET

Notes: a. Pulse test; pulse width d 300 μs, duty cycle d 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 1 - 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 μAVDS = - 60 V, VGS = 0 V, TJ = 70 °C - 5 On-State Drain Currenta ID(on) VDS d - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 5.7 A 0.0 Forward Transconductancea gfs VDS = - 15 V, ID = - 5.7 A 11 S Diode Forward Voltagea VSD IS = - 3.2 A, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 30 V, VGS = - 10 V, ID = - 5.7 A 15 25 nCGate-Source Charge Qgs 4 Gate-Drain Charge Qgd 3.2 Tur n-On Delay Time td(on) VDD = - 30 V, RL = 30 : ID # - 1 A, VGEN = - 10 V, Rg = 6 : 12 20 ns Rise Time tr 12 20 Turn-Off Delay Time td(off) 22 35 Fall Time tf 16 25 Source-Drain Reverse Recovery Time trr IF = - 3.2 A, dI/dt = 100 A/μs 45 90 Output Characteristics 012345 VGS = 10 thru 5 V 3 V 4 V VDS - Drain-to-Source Voltage (V) Drain Current (A)ID - Transfer Characteristics 012345 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) Drain Current (A)ID - '74 ZZZGLQWHNMS 0.05 0.06

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.04 0.08 0.12 0.16 0.20 048 1 2 1 6 2 0 - On-Resistance (:)RDS(on) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 4 8 12 16 VDS = 30 V ID = 5.7 A Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS - VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C Source Current (A)IS - Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 200 400 600 800 1000 1200 0 1 02 03 04 05 06 0 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 5.7 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) 0.00 0.04 0.08 0.12 0.16 0.20 02468 1 0 - On-Resistance (:)RDS(on) VGS - Gate-to-Source Voltage (V) ID = 5.7 A '74 ZZZGLQWHNMS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA Variance (V)VGS(th) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient 0.01 600 Time (s) Power (W) 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 110-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance '74 ZZZGLQWHNMS

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$SSOLFDWLRQ1RWH ZZZGLQWHNMS RECOMMENDED PAD LAYOUT FOR ')1; 0.300 (0.012) 0.350 (0.014) 0.650 (0.026) 0.950 (0.037) 0.300 (0.012) 0.355 (0.014) 0.235 (0.009) 0.475 (0.019) 0.870 (0.034) 0.275 (0.011) 0.350 (0.014) 0.550 (0.022) 0.650 (0.026) Dimensions in mm/(Inches)

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