DTQ1203

DTQ1203 DINTEK | Alldatasheet

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V (D-S) MOSFET FE ATURES 100 % R g Te sted  Compliant to RoHS Directive 2002/95/EC APPLIC ATIONS Load Switch P RODUCT SUMMARY V DS (V) R DS(on) I D (A) c Q g yp.) Notes: Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on T C = 25 °C. ABSOLUTE MAXIMUM RATINGS A = 25 °C, unless otherwise noted) P arameter Symbol Limit Unit Drain-Source Voltage V DS - 20 V Gate-Source V oltage V GS C ontinuous Drain Current (T J = 150 °C T C = 25 °C I D A T C = 70 °C 0.5 T A = 25 °C a, b T A = 70 °C a, b Pulsed Dr ain Current I DM C ontinuous Source-Drain Diode Current T C = 25 °C I S - 0. T A = 25 °C - 0. Maximum Power Dissipation T C = 25 °C P D W T C = 70 °C T A = 25 °C b T A = 70 °C Oper ating Junction and Storage Temperature Range T J , T st g - 5 0 to 150 Soldering Recommendations (Peak Temperature) 260 P-Channel MOSFET Gate-Source ESD Protected DT-Trench Power MOSFET D T Q1203 www.din-tek.jp G D Top View Bottom View S G at V GS = - 4.5 V at V GS = - 2.5 V 0.55 .75 nC b DFN 1006

t es: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 360 °C/W. Notes: Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not s ubject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” ma y cause permanent damage to the device. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. T HERMAL RESISTANCE RATINGS P arameter Symbol Typical Unit Maximum Maximum Junction-to-Ambient a, b t 10 s R th JA 250 Maximum Junction-to-Foot (Drain) Steady State R th JF 225 S PECIF ICATIONS J 5 °C, unless otherwise noted) P aram eter Symbol Test Conditions Min. Unit Max. Typ. Static Drain-Source Breakdo wn Voltage V DS V GS = 0 V , I D = - 250 µA - 2 V V DS T emperature Coefficient V DS J I D = - 250 µA - 14 mV/°C V GS( th) T emperature Coefficient V GS(th) J 2.4 Gate-S ource Threshold Voltage V GS(t V DS = V GS , I D = - 2 50 µA V Gate-Source Leakage I GSS ± 10 nA Zero Gate Voltage Drain Current I DSS V DS = - 2

0 V, V

= 0 V - 1 µA V DS = - 2 = 0 V, T J = 55 ° C - 10 On-State Drain Current a I on) V DS - 5 V , V GS - 4.5 V A Drain-Source On-State Resistance a R DS( on) V GS = - 4.5 V, I D = - A V GS = - 2.5 V, I D = - A F orward Transconductance a g fs V DS = - 5 V, I D = - .4 A S Dy namic b Inpu t Capacitance C is s V DS = - 10 V , V GS = 0 V , f = 1 MHz 192 pF Output C apacitance C oss Re verse Transfer Capacitance C rs s T otal Gate Charge Q g V DS = - = - 4.5 V, I D .4 A nC Gate-S ource Charge Q gs 0.2 Gate- Drain Charge Q gd 0.3 G ate Resistance R g f = 1 MH z Tur n-On Delay Time t on) V DD = - 1

0 V, R

L = 9 I D - 0.4 A, V GEN = - 4.5 V , R g = 1 ns Rise Time t r Turn-Off DelayTime t off) Fall Time t f Drain -Source Body Diode Characteristics I Continuous Source-Drain Diode Current S T C = 25 ° C A Pulse Diode Forward Current a I SM - 3 Body Diode V oltage V SD I F = - 0. 7 A V - 1.2 - 0.8 Body Diode Reverse Recovery Time t rr I F - 0.7 A, dI/dt = 100 A/µs, T J = 25 °C ns Q Body Diode Reverse Recovery Charge rr n C Reverse Recovery Fall Time t a ns Re verse Recovery Rise Time t b DT Q1203 www.din-tek.jp - 0.4 - 1.0 V DS = 0 V, V GS = ± 12 V - 0.8 .75 2.0

(25 °C, unless otherwise noted) Outp u t Characteristics On-Resistance vs. Drain Current Gate Charge 1 2 3 DS - Drain-to-Source Voltage (V) D - Drain Current (A) 0.5 1.0 1.5 V S G V S G R DS(on) - On-Resistance ( Ω D - Drain Current (A) 0.0 0.9 1.8 2.7 3.6 4.5 0.2 0.4 0.6 0.8 1.0 V S D V D V D Q g - Total Gate Charge (nC) GS - Gate-to-Source Voltage (V) T r ansfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 1.5 .3 0.6 0.9 1.2 T C 125 T C C 25 ° T C = - 55 °C GS - Gate-to-Source Voltage (V) D - Drain Current (A) C rss 160 240 320 C is s C oss DS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 150 125 0 25 50 75 100 I D V GS V T J - Junction Temperature (°C) (Normalized) R DS(on) - On-Resistance DT Q1203 www.din-tek.jp V GS V V GS -1.5 V V GS -1.8 V V GS 4.5 V thru -2.5 V V GS V S -16 V S V -10 V I D .4A -4.5 V GS -2. V

(25 °C, unless otherwise noted) So urce- Drain Diode Forward Voltage Threshold Voltage 0.0 1.5 1.2 0.9 0.6 0.1 T J ° C T J 150 °C SD - Source-to-Drain Voltage (V) S - Source Current (A) 0.25 0.35 0.45 0.55 0.65 0.75 - 50 - 25 150 125 100 I D A -250 μ GS(th) (V) T J - Temperature (°C) On -Resis tance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.5 1.0 1.5 2.0 123 T J 2 5 ° C T J 125 °C I D .4A R DS(on) - On-Resistance ( Ω GS - Gate-to-Source Voltage (V) 0.001 0.01 100 0.1 1 Ti m e (s) Power (W) Safe Operat ing Area, Junction-to-Ambient 0.1 0.1 T A C se ul P le ing S m s 0.01 s s C D 100 s μ ited Lim y b R DS s m ms SS VD B d e mit i L DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified D - Drain Current (A) DT Q1203 www.din-tek.jp

(25 °C, unless otherwise noted) The pow er dissipation P D is base d on T J (ma = 150 ° C, using junction-to-cas e thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 150 125 50 75 100 T C - Case Temperature (°C) D - Drain Current (A) P o wer, Junction-to-Case 0.0 0.2 0.4 0.6 0.8 1.0 1.2 150 125 50 75 100 T C - Case Temperature (°C) Power (W) Power, Jun c tion-to-Ambient 0.00 0.06 0.12 0.18 0.24 0.30 150 50 75 100 125 T A - Ambient Temperature (°C) Power (W) DT Q1203 www.din-tek.jp

(25 °C, unless otherwise noted) No rmalized T hermal Transient Impedance, Junction-to-Ambient 1000 100 0.2 0.1 Square W ave Pulse Duration (s) Normalized Ef fective Transient Thermal Impedance 0.1 0.01 t t tes No P DM Duty Cycle, D = e = s Ba it Un Per R thJA W 0 ° T JM T A P M D Z thJA (t) t t Sur nt u Mo e fac ed D u e c ycl C ty le g Sin se ul P 0.02 0.05 N o rmalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 D u ty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective Transient Thermal Impedance 0.1 0.01 0.05 gle Sin e uls P 0.02 DT Q1203 www.din-tek.jp

www.din-tek.jp NOTE 1. ALL DIMENSION ARE IN MILLIMETERS.ANGLES ARE IN DEGREES. 2. COPLANARITY APPLIES TO THE EXPOSED HEAT SINK SLUG AS WELL AS THE TERMINALS. UNIT: mm RECOMMENDED LAND PATTERN

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