DTP9530

DTP9530_13 DINTEK | Alldatasheet

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Technical content

N-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free  Tre nchFET Power MOSFET  100 % R g and UIS Tested

APPLICATIONS

 DC/DC Conversion - Low-Side Switch  Notebook PC G a m i n g PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 0.0048 at V GS = 10 V 26 26.5 nC 0.006 at V GS = 4.5 V 23.3 N-Channel MOSFET G D S Notes: a. Based on T C = 25 °C. b. Surface Mounte d on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS

30 VGate-Source Voltage V

± 20 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D A T C = 70 °C 22.6 T A = 25 °C 21.5 b, c T A = 70 °C 17.1 b, c Pulsed Drain Current I DM Continuous Source-Drain Diode Current T C = 25 °C I S 5.4 T A = 25 °C 2.7 b, c Single Pulse Avalanche Current L = 0.1 mH I AS Avalanche Energy E AS 80 mJ Maximum Power Dissipation T C = 25 °C P D 6.0 WT C = 70 °C 3.3 T A = 25 °C 3.0 b, c T A = 70 °C 1.9 b, c Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, d t ≤ 10 s R thJA 33 42 °C/W Maximum Junction-to-Foot (Drain) Steady State R thJF 16 21 RoHS COMPLIANT S S S G D D D D 6.15 mm 5.15 mm PowerPAK SO-8 Bottom V ie w www.din-tek.jp DTP9530

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T J = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 1 mA 30 V V DS Temperature Coefficient ΔV DS J I D = 250 µA 27 mV/°CV GS(th) Temperature Coefficient ΔV GS(th) J - 5.6 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.2 2.5 V Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current I DSS V DS = 30 V, V GS = 0 V 1 µAV DS = 30 V, V GS = 0 V, T J = 55 °C 10 On-State Drain Current a I D(on) V DS ≥ 5 V, V GS = 10 V 30 A Drain-Source On-State Resistance a R DS(on) V GS = 10 V, I D = 15 A 0.0036 0.0048 ΩV GS = 4.5 V, I D = 10 A 0.0052 0.0060 Forward Transconductance a g fs V DS = 15 V, I D = 15 A 75 S Dynamic b Input Capacitance C iss V DS = 15 V, V GS = 0 V, f = 1 MHz 3545 pFOutput Capacitance C oss 650 Reverse Transfer Capacitance C rss 240 Total Gate Charge Q g V DS = 15 V, V GS = 10 V, I D = 10 A 62 95 nCV DS = 15 V, V GS = 4.5 V, I D = 10 A 26.5 40 Gate-Source Charge Q gs 8.5 Gate-Drain Charge Q gd 7.3 Gate Resistance R g f = 1 MHz 0.2 1.1 2.2 Ω Tur n-On Delay Time t d(on) V DD = 15 V, R L = 1.5 Ω I D ≅ 10 A, V GEN = 4.5 V, R g = 1 Ω 35 60 ns Rise Time t r 16 30 Turn-Off Delay Time t d(off) 48 85 Fall Time t f 16 30 Tur n-On Delay Time t d(on) V DD = 15 V, R L = 1.5 Ω I D ≅ 10 A, V GEN = 10 V, R g = 1 Ω 18 35 Rise Time t r 81 6 Turn-Off Delay Time t d(off) 41 75 Fall Time t f 81 8 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C 5.4 A Pulse Diode Forward Current a I SM Body Diode Voltage V SD I S = 3 A 0.72 1.1 V Body Diode Reverse Recovery Time t rr I F = 10 A, dI/dt = 100 A/µs, T J = 25 °C 33 65 ns Body Diode Reverse Recovery Charge Q rr 27 54 nC Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b www.din-tek.jp DTP9530

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge V GS =1 0t h ru 4 V V GS =3 V V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.0020 0.0025 0.0030 0.0035 0.0040 0.0045 01 4 2 8 42 56 70 V GS =4 . 5V V GS =1 0 V - On-Resistance (Ω)R DS(on) I D - Drain Current (A) 0 1 32 63 95 26 5 V DS =2 0 V I D =1 0A V DS =1 5 V V DS =1 0 V - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V GS Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 12345 T C = 25 °C T C = 125 °C T C = - 55 °C V GS - Gate-to-Source Voltage (V) - Drain Current (A)I D C rss 900 1800 2700 3600 4500 0 6 12 1 8 24 30 C iss C oss V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 V GS =4 . 5V V GS =1 0 V I D =1 5A T J -J unction Temperature (°C) (Normalized) - On-ResistanceR DS(on) www.din-tek.jp DTP9530

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.01 0.001 0.1 100 T J = 150 °C T J = 25 °C V SD -S ource-to-Drain Voltage (V) - Source Current (A)I S - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 I D = 250 µA I D =5m A Variance (V)V GS(th) T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.005 0.010 0.015 0.020 0.025 01234567 8 91 0 T J =2 5 ° C T J = 125 °C I D =1 5A - On-Resistance (Ω)R DS(on) V GS - Gate-to-Source Voltage (V) 120 160 200 0 111 00.00 .01 Time (s) Power ( W) 0.1 Safe Operating Area, Junction-to-Ambient 100 0 0 101110 . 0 0.01 -D r a in Current (A)I D 0.1 0.1 1m s T C = 25 °C Single Pulse 10 ms 100 ms DC V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified 10 s Limited byR DS(on) 1 s www.din-tek.jp DTP9530

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junctio n-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 I D -D r a in Current (A) T C - Case Temperature (°C) Power Derating, Junction-to-Foot 0.0 1.5 3.0 4.5 6.0 7.5 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) Power, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 2 55 07 5 1 0 0 1 2 5 1 5 0 T A -A mbient Temperature (°C) Power (W) www.din-tek.jp DTP9530

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 1 10 100010 100 0.2 0.1 0.05 0.02 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse t t Notes: P DM 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - T A DM Z thJA(t) t t 4. Surface Mounted Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0 1110 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 www.din-tek.jp DTP9530

PowerPAK SO-8, (SINGLE/DUAL) MILLIMETERS INCHES A1 0.00 - 0.05 0.000 - 0.002 D4 0.57 TYP. 0.0225 TYP. D5 3.98 TYP. 0.157 TYP. E4 0.75 TYP. 0.030 TYP. e 1.27 BSC 0.050 BSC K 1.27 TYP. 0.050 TYP. M 0.125 TYP. 0.005 TYP. ECN: T10-0055-Rev. J, 15-Feb-10 DWG: 5881 3. Dimensions exclusive of mold flash and cutting burrs. Notes Inch will govern. Dimensions exclusive of mold gate burrs. Backside View of Single Pad Backside View of Dual Pad Detail Z D c θ A θ θ e b H θ b L D3(2x) Z K D E W K LH M 0.150 ± 0.008

Package Information

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