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Technical content
N-Channel 30-V (D-S) MOSFET
FEATURES
- Halo gen-free TrenchFET ® Power MOSFET 100 % R g and UIS Tested
APPLICATIONS
- Low-Side Switch Notebook PC G a m i n g PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A )a Qg (T yp.) 0.0032 at VGS = 10 V 30 26.5 nC 0.0039 at VGS = 4.5 V 26. N-Channel MOSFET G D S Notes: Based on TC = 25 ° b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS 30 VGat e-Source Voltage VGS ± 20 Contin uous Drain Current (TJ = 150 ° TC = 25 ° C ID A TC = 70 ° C 22.6 TA = 25 ° C 21.5b, c TA = 70 ° C 17.1b, c Pulsed Dr ain Current IDM 70 Contin uous Source-Drain Diode Current TC = 25 ° C IS 5.4 TA = 25 ° C 2.7b, c Single Pulse A valanche Current L = 0.1 mH IAS 40 A valanche Energy EAS 80 mJ Max imum Power Dissipation TC = 25 ° C PD 6.0 WTC = 70 ° C 3.3 TA = 25 ° C 3.0b, c TA = 70 ° C 1.9b, c Ope rating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS P arameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJ A 33 42 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 16 RoHS COMPLIANT S S S G D D D D 6.15 mm 5.15 mm PowerP AK SO-8 Bottom View DT1 www.daysemi.jp
tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V , ID = 1 mA 30 V VDS T emperature Coefficient ΔVDS/TJ ID = 250 µA 27 mV/°CVGS( th) T emperature Coefficient ΔVGS (th)/TJ - 5. Gate-Source Threshold Voltage VGS(t h) VDS = VGS , ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 µAVDS = 30 V , VGS = 0 V , TJ = 55 °C On-State Drain Currenta ID( on) V DS ≥ 5 V , VGS =
10 V 30 A
Drain-Source On-State Resistancea RDS( on) VGS = 10 V , ID = 15 A 0.0026 0.0032 ΩVGS = 4.5 V , ID = 10 A 0.0032 0.0039 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 75 S Dy namicb Inpu t Capacitance Cis s VDS = 15 V , VGS = 0 V , f = 1 MHz 3545 pFOutput Capacitance Cos s 650 Re verse Transfer Capacitance Crs s 240 T otal Gate Charge Qg VDS = 15 V , VGS = 10 V , ID = 10 A 62 nCVDS =
15 V, VGS =
4.5 V, ID = 1
26.5 40 Gate-Source Charge Qgs 8.5 Gate- Drain Charge Qgd 7.3 G ate Resistance Rg f = 1 MHz 0.2 1.1 2.2 Ω Tur n-On Delay Time td( on) VDD = 15 V , RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V , Rg = 1 Ω ns Rise Time tr 16 Turn-Off Delay Time td( off) 48 Fall Time tf 16 Tur n-On Delay Time td( on) VDD = 15 V , RL = 1.5 Ω ID ≅
10 A, VGEN =
10 V, Rg = 1
Ω 18 35 Rise Time tr 81 Turn-Off Delay Time td( off) 41 Fall Time tf 81 Drain -Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 2 5 °C 5.4 A Pulse Diode Forward Currenta ISM 70 Body Diode V oltage VSD IS = 3 A 0.72 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 33 65 ns Body Diode Reverse Recovery Charge Qrr 27 54 nC Reverse Recovery Fall Time ta 17 ns Re verse Recovery Rise Time tb 16 DT1 www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted Outp ut Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0.0 VGS =1 0t h ru 4 V VGS =3V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.0020 0.0025 0.0030 0.0035 0.0040 0.0045 4 2 8 42 56 70 VGS =4 . 5V VGS =1 - On -Resistance (Ω)RDS(on ID - Drain Current (A) 1 32 63 95 26 5 VDS =2 ID =1 VDS =1 VDS =1 - Gate -to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS T ransfer Characteristics Capacitance On-Resistance vs. Junction Temperature 12345 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss 900 1800 2700 3600 4500 6 12 18 24 30 Cis s Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 - 25 0 25 50 75 100 125 150 VGS =4 . 5V VGS =1 ID =1 TJ -J unction Temperature (°C) (Normalized) - On -ResistanceRDS (on) DT1 www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Sou rce-Drain Diode Forward Voltage Threshold Voltage 0.0 0.01 0.001 0.1 100 TJ = 150 °C TJ = 25 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S - 0 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5m A Variance (V)VGS( th) TJ - Temperature (°C) On -Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.005 0.010 0.015 0.020 0.025 012 34567 8 91 0 TJ =2 5 ° C TJ = 125 °C ID =1 - On -Resistance (Ω)RDS( on) VGS - Gate-to-Source Voltage (V) 120 160 200 0 111 0 0 .00 .01 Time (s) Power (W) 0.1 Saf e Operating Area, Junction-to-Ambient 100 0 0 10 111 0 . 0 0.01 r a i nCurrent (A)I D 0.1 0.1 s TC = 25 °C Single Pulse ms 100 ms DC VDS - Dr ain-to-Source Voltage (V) * VGS > minimum VGS at whi ch RDS (on) is specified 10 s Li mited byR DS (on)* 1 s DT1 www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted * T he power dissipation P D is based on T J( max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 25 50 75 100 125 150 ID -D r a i nCurrent (A) TC - Case Temperature (°C) Po wer Derating, Junction-to-Foot 0.0 1.5 3.0 4.5 6.0 7.5 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Pow er, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 2 55 07 5 1 0 0 1 2 5 1 5 0 TA -A mbient Temperature (°C) Power (W) DT1 www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Norm alized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 0.02 Squar e WaveP ulse Duration (s) Nor malized Effective Transient Thermal Impedance 0.1 0.01 Sin gle Pulse Notes PDM Duty Cycle, D = 2. Per Unit Base = Rth JA = 85 °C/W TJM - TA =P DMZth JA(t) Surface Mounted Duty Cycle = 0.5 No rmalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 0.05 0.02 Sin gle Pulse Duty Cycle = 0.5 Square WaveP ulse Duration (s) Nor malized Effective Transient Thermal Impedance 0.1 0.01 DT1 www.daysemi.jp
PAK SO-8, (SINGLE/DUAL) MILLIMETERS INCHES A1 0.00 - 0.05 0.000 - 0.002 D4 0.57 TYP. 0.0225 TYP. D5 3.98 TYP. 0.157 TYP. E4 0.75 TYP. 0.030 TYP. e 1.27 BSC 0.050 BSC K 1.27 TYP. 0.050 TYP. M 0.125 TYP. 0.005 TYP. ECN: T10-0055-Rev. J, 15-Feb-10 DWG: 5881 3. Dimensions e xclusive of mold flash and cutting burrs. Notes Inch will go vern. Dimensions exclusive of mold gate burrs. Bac kside View of Single Pad Backside View of Dual Pad Detail Z D c θ A θ θ e b H θ b L D3(2x) Z K D E W K LH M 0.150 ± 0.008
Package Information
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