DTP6N120SC DINTEK | Alldatasheet

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Technical content

Features

H igh speed switching with low capacitance H igh operating junction temperature capability V ery fast and robust intrinsic body diode

Applications

S olar inverters UPS H igh voltage DC/DC converters S witch mode power supplies Package Drain Gate Source Pin 1 Pin 2 Pin 3 P art Number P ackage T www.din-tek.jp DTP6N120SC 1200V N-Channel Silicon Carbide Power MOSFET TO-220AB Top View GDS DTP6N120SC

Electrical Characteristics (TC=25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note Min. Typ. Max. IDSS Drain Leakage Current (Zero Gate Voltage) 0.1 10 μA VDS=1200V, VGS=0V IGSS Gate Leakage Current 1 ±100 nA VDS=0V, VGS=-5~20V Vth Gate Threshold Voltage

4.3 V VGS=VDS, ID=380μA

Fig. 9 3.3 V VGS=VDS, ID=380μA @ TC=175°C Ron Static Drain-Source On-resistance 750 900 mΩ VGS=20V, ID=1.5A @TJ=25°C Fig. 4, 5, 6, 7 1070 mΩ VGS=20V, ID=1.5A @TJ=175°C Ciss Input Capacitance 260 pF VDS=800V, VGS=0V, f=1MHz, VAC=25mV Fig. 16 Coss Output Capacitance 15 pF Crss Reverse Transfer Capacitance 2.6 pF Eoss Coss Stored Energy 5.8 μJ Fig. 17 QG Total Gate Charge 15.8 nC VDS=800V, ID=1.5A, VGS=-5 to 20V Fig. 18 QGS Gate-Source Charge 3.3 nC QGD Gate-Drain Charge 11.6 nC RG Gate Input Resistance 26.8 Ω f=1MHz Eon Turn-on Switching Energy 24 μJ VDS=800V, ID=1.5A, VGS=-3.5V to 20V, RG(ext)=0Ω, L=1550μH Fig. 19, Eoff Turn-off Switching Energy 4.1 μJ td(on) Turn-on Delay Time 8.5 ns tr Rise Time 9.6 td(off) Turn-off Delay Time 12.4 tf Fall Time 34.8 Reverse Diode Characteristics (TC=25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note Min. Typ. Max. VSD Diode Forward Voltage 4.1 V ISD=1.5A, VGS=0V Fig. 11, 12 3.6 V ISD=1.5A, VGS=0V, @ TJ=175°C trr Reverse Recovery Time 59 ns VGS=-3.5V/+20V, ISD=1.5A, VR=800V, di/dt=276A/μs, RG(ext)=82Ω Qrr Reverse Recovery Charge 26 nC IRRM Peak Reverse Recovery Current 1.3 A www.din-tek.jp DTP6N120SC

c urves) Fig

1 Output Curve @ T

J C Fig

2 Output Curve @ T

J =25 C Fig Output Curve @ T J C Fig Ron vs. Temperature Fig Normalized Ron vs. Temperature Fig Ron vs. I DS @ Various Temperature www.din-tek.jp DTP6N120SC

Ron vs. Temperature @ Various V GS Fig Transfer Curves @ Various Temperature Fig Threshold Voltage vs. Temperature Fig Body Diode Curves @ T J 55°C Fig Body Diode Curves @ T J =25°C Fig Body Diode Curves @ T J =175°C www.din-tek.jp DTP6N120SC

Quadrant Curves @ T J 55°C Fig rd Quadrant Curves @ T J =25°C Fig rd Quadrant Curves @ T J =175°C Fig Capacitance vs. V DS Fig

17 Output

Fig. 1 Gate Charge Characteristics www.din-tek.jp DTP6N120SC

19 Switching Energy vs. R ext Fig. Switching Time vs. R ext Fig

21 Continuous I

vs. T C Fig. Max. Power Dissipation Derating vs. T C Fig

23 Thermal

Fig. 2 Safe Operating Area www.din-tek.jp DTP6N120SC

s * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM M L L(1) D H(1) Q Ø P A F b(1) e(1) e E b C MILLIMETERS INCHES MAX. MIN. MAX. MIN. DIM. 0.183 0.167 4.65 4.25 A 0.040 0.027 1.01 0.69 b 0.068 0.047 1.73 1.20 b(1) 0.024 0.014 0.61 0.36 c 0.610 0.585 15.49 14.85 D 0.414 0.395 10.51 10.04 E 0.105 0.095 2.67 2.41 e 0.208 0.192 5.28 4.88 e(1) 0.055 0.045 1.40 1.14 F 0.255 0.240 6.48 6.09 H(1) 0.115 0.095 2.92 2.41 J(1) 0.552 0.526 14.02 13.35 L 0.150 0.131 3.82 3.32 L(1) 0.155 0.139 3.94 3.54 Ø P 0.118 0.102 3.00 2.60 Q ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 www.din-tek.jp

Package Information

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