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P-Channel 60 V (D-S) MOSFET FE ATURES
- H alogen-free According to IEC 61249-2-21 Definition TrenchFET ® Power MOSFET 100 % R g an d UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICAT IONS o w e r S w i t c h Load Switch in High Current Applications DC/DC Converters Notes: a. Duty cycle 1 % b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A ) Q g (T yp.) - 60 0.0162 at VGS = - 10 V - 36 670.0230 at VGS = - 4.5 V - 24 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) P arameter Symbol Limit Unit Drain-Source Voltage VDS - 60 V Gat e-Source Voltage VGS ± 20 Contin uous Drain Current (TJ = 150 ° TC = 25 ° C ID - 36 A TC = 70 ° C - 29 Pulsed Drain Current (t = 300 µs) IDM - 100 A valanche Current IAS - 32 Single A valanche Energya L = 0.1 mH EAS 51 mJ Maximum Power Dissipationa TC = 25 ° C PD 41.7b W TA = 25 °Cc 2.1 Ope rating Junction and Storage Temperature Range TJ, Tstg - 55 to 1 50 °C THERMAL RESISTANCE RATINGS P arameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c Rth JA 60 Junction-to-Case (Drain) Rth JC 3 TO-220AB Top V iew GD S S G D P-Channel MOSFET DT1 www.daysemi.jp
tes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS (TJ = 25 °C, unless otherwise noted) P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VDS = 0 V , ID = - 250 µA - 60 V Gate T hreshold Voltage VGS( th) VDS = VGS, ID = - 250 µA - 1 - 2.5 Gate-Body Leakage IGSS VDS = 0 V , VGS = ±
20 V ± 250 nA
Zero Gate Voltage Drain Current IDSS VDS = - 6
0 V, VGS = 0
µAVDS = - 60 V , VGS = 0 V , TJ = 12 5 °C - 50 VDS = - 60 V , VGS = 0 V , TJ = 15 0 °C - 250 On-State Drain Currenta ID( on) V DS -
10 V, VGS =
- 10 V - 30 A Drain-Source On-State Resistancea RDS( on) VGS = - 10 V , ID = - 14 A 0 .0135 0.0162 VGS = - 4.5 V , ID = - 12 A 0 .0190 0.0230 Forward Transconductancea gfs VDS = - 20 V, ID = - 14 A 40 S Dy namicb Inpu t Capacitance Ciss VGS = 0 V , VDS = - 20 V, f = 1 MHz 2765 pFOutput Capacitance Coss 330 Re verse Transfer Capacitance Crs s 280 T otal Gate Chargec Qg VDS = - 20 V , VGS = - 10 V , ID = - 14 A 67 100 nCGate-Source Chargec Qgs 13.5 Gate- Drain Chargec Qgd 14 G ate Resistance Rg f = 1 MHz 0.5 2.5 5 Tur n-On Delay Timec td(on VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 nsRise Timec tr 11 Turn-Off Delay Timec td(off) 42 Fall Timec tf 12 Drain -Source Body Diode Ratings and Characteristics TC = 25 °Cb Co ntinuous Current IS - 36 A Pulse d Current ISM - 100 F orward Voltagea VSD IF = - 1 0 A, VGS = 0 V - 0.8 - 1.5 V Reverse Recovery Time trr IF = - 10 A, dI/ dt = 100 A/µs 38 57 ns Peak Reverse Recovery Current IRM( REC) 2.3 3.5 A Reverse Recovery Charge Qrr 40 60 nC DT1 www.daysemi.jp
L CHARACTERISTICS (25 °C, unless otherwise noted) Output Cha racteristics Transfer Characteristics Transconductance 0.5 1 1.5 2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS =
10 V thru 4 V
VGS = 3 V 0.2 0.4 0.6 0.8 1.0 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 2 5 °C TC = 125 °C TC = - 55 °C 0 6 12 18 24 30 gfs - Transconductance (S) ID - Drain Current (A) TC = 125 °C TC = 25 °C TC = - 55 °C On -Resistance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.005 0.010 0.015 0.020 0.025 0.030 2 04 06 08 0 1 0 0 RDS( on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 1 0 V 0.010 0.016 0.022 0.028 0.034 0.040 2468 RDS( on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 1 25 °C TJ = 2 5 °C ID = 1 4 A 1 42 84 25 67 0 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 3 2 V VDS = 1 0 V VDS = 2 0 V ID = 14 A DT1 www.daysemi.jp
PICAL CHARACTERISTICS (25 °C, unless otherwise noted) Sou rce-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 2 5 °C 860 1720 2580 3440 4300 102 03 04 0 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Cos s Crs s 0.7 1.0 1.3 1.6 1.9 2.2 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 RDS( on) -O n - R e s i s t a n c e(Normalized) TJ - Junction Temperature (°C) ID = 14 A VGS = 1 0 V VGS = 4 .5 V Thresh old Voltage Drain Source Breakdown vs. Junction Temperature Current Derating 1.1 1.4 1.7 2.0 2.3 50 - 25 0 25 50 75 100 125 150 VGS (th) (V TJ -T e m p e r a t u r e (°C) ID = 250 μA 50 - 25 0 25 50 75 100 125 150 VDS (V) D rain-to-Source Voltage TJ -T e m p e r a t u r e (°C) ID = 250 μA 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) DT1 www.daysemi.jp
L CHARACTERISTICS (25 °C, unless otherwise noted) Sing le Pulse Avalanche Current Capability vs. Time 100 0.000001 IDAV (A Tim e (s) TJ = 2 5 °C TJ = 150 °C Safe Ope rating Area 0.01 0.1 100 1000 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS( on) is specified DC, 1 s, 100 ms Limited by RDS (on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs Norm alized Thermal Transient Impedance, Junction-to-Case Square W ave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 11 010-1 Nor malized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse DT1 www.daysemi.jp
- M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471
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