DTP0403

DTP0403_13 DINTEK | Alldatasheet

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N-Channel 30-V (D-S) MOSFET

FEATURES

• T renchFET Power MOSFET  100 % R g and UIS Tested  Compliant to RoHS Directive 2011/65/EU

APPLICATIONS

 O R-ing  Server D C / D C Notes: a. Based on T C = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ) 0.0038 at V GS = 10 V 98 82 nC0.0044 at V GS = 4.5 V 98 TO-220AB Top View GDS N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20 Continuous Drain Current (T J = 175 °C) T C = 25 °C I D a, e A T C = 70 °C 98 e T A = 25 °C 28.8 b, c T A = 70 °C 27 b, c Pulsed Drain Current I DM Avalanche Current Pulse L = 0.1 mH I AS Single Pulse Avalanche Energy E AS 64.8 V Continuous Source-Drain Diode Current T C = 25 °C I S a, e AT A = 25 °C 3.13 b, c Maximum Power Dissipation T C = 25 °C P D 250 a W T C = 70 °C 175 T A = 25 °C 3.75 b, c T A = 70 °C 2.63 b, c Operating Junction and Storage Temperature Range T J , T stg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambient b, d t  10 sec R thJA 32 40 °C/W Maximum Junction-to-Case Steady State R thJC 0.5 0.6 www.din-tek.jp DTP0403

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (T J = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 µA 30 V V DS Temperature Coefficient V DS J I D = 250 µA 35 mV/°CV GS(th) Temperature Coefficient V GS(th) J - 7.5 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.5 2.5 V Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current I DSS V DS = 30 V, V GS = 0 V 1 µAV DS = 30 V, V GS = 0 V, T J = 55 °C 10 On-State Drain Current a I D(on) V DS 5 V, V GS = 10 V 90 A Drain-Source On-State Resistance a R DS(on) V GS = 10 V, I D = 28.8 A 0.0024 0.0038 GS = 4.5 V, I D = 27 A 0.0027 0.0044 Forward Transconductance a g fs V DS = 15 V, I D = 28.8 A 160 S Dynamic b Input Capacitance C iss V DS = 15 V, V GS = 0 V, f = 1 MHz 12065 pFOutput Capacitance C oss 1725 Reverse Transfer Capacitance C rss 970 Total Gate Charge Q g V DS = 15 V, V GS = 10 V, I D = 28.8 A 171 257 nCV DS = 15 V, V GS = 4.5 V, I D = 28.8 A 81.5 123 Gate-Source Charge Q gs Gate-Drain Charge Q gd Gate Resistance R g f = 1 MHz 1.4 2.1  Tur n-On Delay Time t d(on) V DD = 15 V, R L = 0.625  I D  24 A, V GEN = 10 V, R g = 1  18 27 ns Rise Time t r 11 17 Turn-Off Delay Time t d(off) 70 105 Fall Time t f 10 15 Tur n-On Delay Time t d(on) V DD = 15 V, R L = 0.67  I D  22.5 A, V GEN = 4.5 V, R g = 1  55 83 Rise Time t r 180 270 Turn-Off Delay Time t d(off) 55 83 Fall Time t f 12 18 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C 90 A Pulse Diode Forward Current a I SM Body Diode Voltage V SD I S = 22 A 0.8 1.2 V Body Diode Reverse Recovery Time t rr I F = 20 A, di/dt = 100 A/µs, T J = 25 °C 52 78 ns Body Diode Reverse Recovery Charge Q rr 70.2 105 nC Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b www.din-tek.jp DTP0403

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance V GS = 10 V thru 4 V V DS - Drain-to-Source Voltage (V) )A( t n e r ruC n i a r D - I D V GS = 2 V V GS = 3 V 100 200 300 400 500 600 0 1 02 03 04 05 06 07 0 809 0 )S ( e c n a t cud n o c s n a r T - G sf I D - Drain Current (A) T C = - 55 °C T C = 25 °C T C = 125 °C 3000 6000 9000 12 000 15 000 0 6 12 18 24 30 V DS - Drain-to-Source Voltage (V) ) F p ( ec n a t i c a p a C - C C iss C oss C rss Transfer Characteristics R DS(on) vs. Drain Current Gate Charge 0.0 0.6 1.2 1.8 2.4 3.0 012 34 V GS - Gate-to-Source Voltage (V) )A( t n e r ruC n i a r D - I D T C = 25 °C T C = - 55 °C T C = 125 °C 0.0020 0.0022 0.0024 0.0026 0.0028 0.0030 0.0032 0 1 53 04 56 07 59 0 I D - Drain Current (A) R DS(on) e (Ω)cn a t s i s e R - n O – V GS = 10 V V GS = 4.5 V 0 306 09 0 1 2 0 1 5 0 1 80 )V( e g a t l oV e c ruo S - o t - e t a G - Q g - Total Gate Charge (nC) V GS I D = 28.8 A V DS = 24 V V DS = 15 V www.din-tek.jp DTP0403

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature R DS(on) vs. V GS vs. Temperature 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) V GS = 10 V, I D = 28.8 A R )no ( S D istancese R - n O - ) d e z i l a m r oN( V GS = 4.5 V, I D = 27 A 0.000 0.001 0.002 0.003 0.004 0.005 0246 8 10 V GS - Gate-to-Source Voltage (V) R DS(on ) - e (Ω)cn a t s i s e R - n O I D = 28.8 A T A = 125 °C T A = 25 °C Forward Diode Voltage vs. Temperature Threshold Voltage 0.001 0.01 0.1 100 0 0 .2 0.4 0.6 0. 8 1 )A( t n e r ruC e c ruo S - I S V SD - Source-to-Drain Voltage (V) T J = 25 °C T J = 150 °C 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 )V( e c n a i r aV V )h t( S G T J - Temperature (°C) I D = 250 µA Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 100 1000 0.1 1 10 100 T A = 25 °C Single Pulse - Drain Current (A)I D dc 10 s 1 s 100 ms 10 ms *Limited by r DS (on) V DS - Drain-to-Source Voltage (V) GS minimum V GS at which r DS(on) is specified www.din-tek.jp DTP0403

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) *The power dissipation P D is ba sed on T J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 100 150 200 250 300 0 25 50 75 100 125 150 175 I D )A( t n e r ruC n i a r D - T C - Case Temperature (°C) Package Limited Power Derating 100 150 200 250 300 0 25 50 75 100 125 150 175 C - Case Temperature (°C) )W( n o i t a p i s s i D r ewo P T Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 10- 10- 10- 10- Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 www.din-tek.jp DTP0403

s * M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCH ES A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471

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