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N-Channel 30-V (D-S) MOSFET FE ATURES TrenchFET® Power MOSFET 100 % R g an d UIS Tested Compliant to RoHS Directive 2011/65/EU APPLICAT IONS OR-ing Server D C / D C Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. PRODUCT SUMMARY VDS (V ) RDS(on) () ID (A )a, e Qg (T yp) 0.0029 at VGS = 10 V 90 82 nC0 .0033 at VGS = 4.5 V 90 T O-220AB T op View GDS N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) P arameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gat e-Source Voltage VGS ± 2 Continuous Drain Current (TJ = 175 ° TC = 25 °C ID 90a, e A TC = 70 °C 90e TA = 25 °C 28.8b, c TA = 70 °C 27b, c Pulsed Dr ain Current IDM 90 A valanche Current Pulse L = 0.1 mH IAS 36 Single Pulse A valanche Energy EAS 64 .8 V Continuous Source-Drain Diode Current TC = 25 °C IS 90a, e ATA = 25 °C 3.13b, c Max imum Power Dissipation TC = 25 °C PD 250a W TC = 70 °C 175 TA = 25 °C 3.75b, c TA = 70 °C 2.63b, c Ope rating Junction and Storage Temperature Range TJ, Tstg - 55 to 17 5 °C THERMAL RESISTANCE RATINGS P arameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t 10 sec RthJ A 32 °C/W Maximum Junction-to-Case Steady State RthJC 0. 5 0.6 DT1 www.daysemi.jp
tes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS (TJ = 25 °C, unless otherwise noted) P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS T emperature Coefficient VDS/TJ ID = 250 µA 35 mV/°CVGS( th) T emperature Coefficient VGS (th)/TJ - 7.5 Gate-S ource Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 2.5 V Gate-Source Leakage IGSS VDS = 0 V , VGS = ±
20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 µAVDS = 30 V , VGS = 0 V , TJ = 55 °C 10 On-State Drain Currenta ID( on) V DS 5 V , VGS = 1
0 V 90 A
Drain-Source On-State Resistancea RDS( on) VGS = 10 V , ID = 28.8 A 0.002 4 0.0029 VGS = 4.5 V , ID = 27 A 0.002 7 0.0033 Forward Transconductancea gfs VDS = 15 V, ID = 28 .8 A 160 S Dy namicb Inpu t Capacitance Ciss VDS = 15 V , VGS = 0 V , f = 1 MHz 12065 pFOutput Capacitance Cos s 1725 Re verse Transfer Capacitance Crs s 970 T otal Gate Charge Qg VDS = 15 V , VGS = 10 V , ID = 28.8 A 171 257 nCVDS = 15 V, VGS = 4.5 V, ID = 28 .8 A 81.5 123 Gate-Source Charge Qgs 34 Gate- Drain Charge Qgd 29 G ate Resistance Rg f = 1 MHz 1.4 2.1 Tur n-On Delay Time td( on) VDD = 15 V , RL = 0.625 ID 24 A, VGEN = 10 V , Rg = 1 ns Rise Time tr 11 Turn-Off Delay Time td( off) 70 105 Fall Time tf 10 Tur n-On Delay Time td( on) VDD = 15 V , RL = 0.67 ID 22.5 A, VGEN = 4.5 V , Rg = 1 Rise Time tr 180 270 Turn-Off Delay Time td( off) 55 Fall Time tf 12 Drain -Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 90 A Pulse Diode Forward Currenta ISM 90 Body Diode V oltage VSD IS = 2 2 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs, TJ = 25 ° C 52 78 ns Body Diode Reverse Recovery Charge Qrr 70.2 105 nC Reverse Recovery Fall Time ta 27 ns Re verse Recovery Rise Time tb 25 DT1 www.daysemi.jp
L CHARACTERISTICS (25 °C, unless otherwise noted) Output Cha racteristics Transconductance Capacitance 0.0 V GS = 10 V thru 4 V VDS - Drain-to-Source Voltage (V) ) A ( t n e r ruC n i a r D - ID V GS = 2 V V GS = 3 V 100 200 300 400 500 600 1 02 03 04 05 06 07 0809 0 ) S ( e c n atcud n oc s nar T - Gs f ID - Drain Current (A) T C = - 55 °C T C = 25 °C T C = 125 °C 3000 6000 9000 12 000 15 000 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) )Fp( e c na ti c apaC - C C is s C os s C rss Tran sfer Characteristics RDS( on) vs. D rain Current Gate Charge 0.0 0.6 1.2 1.8 2.4 3.0 012 VGS - Gate-to-Source Voltage (V) ) A ( t n e r ruC n i a r D - ID T C = 25 °C T C = - 55 °C T C = 125 °C 0.0020 0.0022 0.0024 0.0026 0.0028 0.0030 0.0032 1 53 04 56 07 59 0 ID - Drain Current (A) RDS(on) e (Ω) c n a t s i s e R -nO – V GS = 10 V V GS = 4.5 V 3 06 09 0 1 2 0 1 5 0 1 80 )V( e g a tloV ec ruo S - o t-e t aG - Qg - T otal Gate Charge (nC) VGS I D = 28.8 A V DS = 24 V V DS = 15 V DT1 www.daysemi.jp
PICAL CHARACTERISTICS (25 °C, unless otherwise noted) On -Resistance vs. Junction Temperature RDS( on) vs. VGS vs. Temperature 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction T emperature (°C) V GS = 10 V, ID = 28.8 A R ) n o ( S D istance s e R - n O - ) d e z i l a m r oN( VGS = 4.5 V, ID = 27 A 0.000 0.001 0.002 0.003 0.004 0.005 02468 10 VGS - Gate-to-Source Voltage (V) RDS(on) - e (Ω) c n a t s i s e R - n O I D = 28.8 A T A = 125 °C T A = 25 °C Fo rward Diode Voltage vs. Temperature Threshold Voltage 0.001 0.01 0.1 100 0 0.2 0.4 0.6 0.8 1 ) A ( t n e r ruC e c ruo S - IS VSD - Source-to-Drain Voltage (V) T J = 25 °C T J = 150 °C 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 )V( e c n airaVV ) h t ( S G TJ - T emperature (°C) I D = 250 µA Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 100 1000 0.1 1 10 100 T A = 25 °C Single Pulse Drain Current (A)ID dc 10 s 1 s 100 ms 10 ms *Limited b y rDS (on) VDS - Drain-to-Source V oltage (V) *VGS minimum VGS at which rDS (on) is specified DT1 www.daysemi.jp
L CHARACTERISTICS (25 °C, unless otherwise noted) he power dissipation P D is ba sed on T J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 100 150 200 250 300 25 50 75 100 125 150 175 ID ) A ( t n e r ruC n i a r D - TC - Case T emperature (°C) P ackage Limited Power Derating 100 150 200 250 300 25 50 75 100 125 150 175 C - Case T emperature (°C) )W( n o i t a p i s s i D r ewo P T Norm alized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 10-4 10-3 10-2 10-1 1 Nor malized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 DT1 www.daysemi.jp
- M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471
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