DTN6N120SC3 DINTEK | Alldatasheet

Document overview

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Technical content

Features

H igh speed switching with low capacitance H igh operating junction temperature capability V ery fast and robust intrinsic body diode

Applications

S olar inverters UPS H igh voltage DC/DC converters S witch mode power supplies Package Drain Gate Source Pin Pin Pin P art Number P ackage T O247 G D S Top View DTN6N120SC3 www.din-tek.jp DTN6N120SC3 1200V N-Channel Silicon Carbide Power MOSFET

E lectrical Cha racteristics C =25 C unless otherwise specified) S ymbol P arameter Valu e U nit Test Conditions N ote Min T yp. M ax. I DSS Drain Leakage Current Zero G ate V oltage 0.1 μ A V DS V GS =0V I G SS Gate L eakage C urrent n A V DS =0V V GS 5~2 V V th Gate T hreshold V oltage V V GS V DS , I D 380 μ A F ig. 9 3.3 V V GS V DS , I D 380 μ A T C C R on Static D rain S ource O n resistance 900 m Ω V GS =20 V , I D A T J C F ig. 4, 5, 6, 7 1070 m Ω V GS =20 V , I D A T J =175 C C iss I nput C apacitance pF V DS =800V V GS =0V, f=1MH z V AC =25mV F ig. 16 C oss O utput C apacitance pF C rss R everse T ransfer C apacitance 2.6 pF E oss C oss S t ored E nergy μ J F ig. 17 Q G T otal G ate C harge 5.8 n C V DS 00V I D V GS t o 20V F ig. 18 Q GS G ate S ource C harge nC Q GD G ate D rain C harge 1.6 n C R G G ate I nput R esistance Ω f=1M H z E on T urn on Switching Energy μ J V DS 00V I D .5A, V GS 3.5V to 20V, R G(ext) 1550 μ H Fig . 19, E off T urn o ff Switching Energy μ J t d(on) T urn on Delay Time n s t r R ise Time t d(off) T urn off Delay Time 2.4 t f Fall Time 4.8 R everse Diode Characteristics C =25 C unless otherwise specified) S ymbol P arameter Valu e U nit Test Conditions N ote Min T yp. M ax. V SD Diode Forward Voltage 4.1 V I SD =1.5A V GS =0V F ig. 11, 3.6 V I SD =1.5A V GS =0V, T J C t rr Reverse Recovery Time ns V GS 3.5V /+20V I SD .5A, V R =800V, d i/dt=276A/ μ s R G(ext) =82 Ω Q rr R everse Recovery Charge n C I RRM P eak Reverse Recovery Current A DTN6N120SC3 www.din-tek.jp

c urves) Fig

1 Output Curve @ T

J C Fig

2 Output Curve @ T

J =25 C Fig Output Curve @ T J C Fig Ron vs. Temperature Fig Normalized Ron vs. Temperature Fig Ron vs. I DS @ Various Temperature DTN6N120SC3 www.din-tek.jp

Ron vs. Temperature @ Various V GS Fig Transfer Curves @ Various Temperature Fig Threshold Voltage vs. Temperature Fig Body Diode Curves @ T J 55°C Fig Body Diode Curves @ T J =25°C Fig Body Diode Curves @ T J =175°C DTN6N120SC3 www.din-tek.jp

Quadrant Curves @ T J 55°C Fig rd Quadrant Curves @ T J =25°C Fig rd Quadrant Curves @ T J =175°C Fig Capacitance vs. V DS Fig

17 Output

Fig. 1 Gate Charge Characteristics DTN6N120SC3 www.din-tek.jp

19 Switching Energy vs. R ext Fig. Switching Time vs. R ext Fig

21 Continuous I

vs. T C Fig. Max. Power Dissipation Derating vs. T C Fig

23 Thermal

Fig. 2 Safe Operating Area DTN6N120SC3 www.din-tek.jp

P ackage Dimensions Note: All Dimensions a re i n mm Slot Required, Notch May Be Rounded Dimension D&E Do Not Include Mold Flash www.din-tek.jp

Package Information

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