DTN19N120SC3 DINTEK | Alldatasheet

Document overview

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Technical content

Features

High blocking voltage with low on resistance H igh speed switching with low capacitance H igh operating junction temperature capability V ery fast and robust intrinsic body diode

Applications

S olar inverters UPS Motor drivers H igh voltage DC/DC converters S witch mode power supplies Package D r a i n G a t e S o u r c e P i n P i n P i n P art Number P ackage T O247 DTN19N120SC3 DTN19N120SC3 www.din-tek.jp G D S Top View 1200V N-Channel Silicon Carbide Power MOSFET

E lectrical Cha racteristics T C =25 C unless otherwise specified S ymbol P arameter Valu e U nit Test Conditions N ote Min T yp. M ax. I DSS Zero gate voltage drain current 100 μ A V DS V GS =0V I G SS Gate leakage current n A V DS =0V V GS 5~2 V V TH Gate threshold voltage 2.9 V V GS V DS , I D 1.9 mA F ig. 8, 9 1.9 V GS V DS , I D 1.9 mA T C C R ON Static drain source on resistance 160 195 m Ω V GS =20 V , I D T J C F ig. 4, 5, 6, m Ω V GS =20 V , I D T J =175 C C iss I nput capacitance pF V DS =800V V GS =0V, f=1MH Z V AC =25mV F ig. 16 C oss O utput capacitance pF C rss R everse transfer capacitance pF E oss C oss st ored energy 4.2 μ J F ig. 17 Q g T otal gate charge n C V DS 00V I D 0A, V GS t o 20V F ig. 18 Q gs G ate source charge nC Q gd G ate drain charge n C R g G ate input resistance Ω f=1MH Z E ON T urn on switching energy μ J V DS 00V I D 0A, V GS to 20V, R G(ext) 3.3 450 μ H Fig . 19, 20 E OFF T urn o ff switching energy 4.4 μ J t d(on) T urn on delay time 5.2 n s t r R ise time 4.4 t d(off) T urn off delay time 1.3 t f Fall time 3.1 DTN19N120SC3 www.din-tek.jp

R everse Diode Characteristics T C =25 C unless otherwise specified S ymbol P arameter Valu e U nit Test Conditions N ote Min T yp. M ax. V SD Diode forward voltage 4.1 V I SD A V GS =0V F ig. 10, 11, 12 3.7 V I SD A V GS =0V, T J =175 C t rr Reverse recovery time 3.2 ns V GS V /+20V I SD A, V R =800V, d i/dt=1 00A/u s R G(ext) Ω Q rr R everse recovery charge 01.5 n C I RRM P eak reverse recovery current 5.6 A DTN19N120SC3 www.din-tek.jp

c urves) Fig

1 Output Curve @ T

J C Fig

2 Output Curve @ T

J =25 C Fig Output Curve @ T J C Fig Ron v s . Temperature Fig Normalized Ron v s. Temperature Fig Ron v I DS @ Various Temperature DTN19N120SC3 www.din-tek.jp

v Temperature @ Various V GS Fig Transfer Curve s @ Various Temperature Fig Threshold Voltage vs. Temperature Fig Body Diode C urve s T J 55°C Fig Body Diode C urve s @ T J =25°C Fig Body Diode C urve s @ T J 5°C DTN19N120SC3 www.din-tek.jp

C urves @ T J Fig rd Quadrant C urves @ T J =25°C Fig rd Quadrant C urves @ T J 5°C Fig Capacitance vs. V DS Fig

17 Output Capacitor Stored Energy

Fig. 1 Gate Charge Characteristics DTN19N120SC3 www.din-tek.jp

19 Switching

vs. R ext Fig. Switching Times vs. R ext Fig Continuous Drain Current vs. C a se Temperature Fig. Max. Power Dissipation Derating vs. Case Temperature Fig Thermal I mpedance Fig. 2 Safe Operating Area DTN19N120SC3 www.din-tek.jp

P ackage Dimensions Note: All Dimensions a re i n mm Slot Required, Notch May Be Rounded Dimension D&E Do Not Include Mold Flash www.din-tek.jp

Package Information

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