DTM9926

DTM9926_13 DINTEK | Alldatasheet

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Technical content

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES

• Halogen-free Option Available  TrenchFET Power MOSFETs PRODUCT SUMMARY V DS (V) R DS(on) (Ω)I D (A) 0.022 at V GS = 4.5 V 6.6 0.030 at V GS = 2.5 V 5.5 Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 12 Continuous Drain Current (T J = 150 °C) a T A = 25 °C I D 6.6 5.2 A T A = 70 °C 5.5 3.5 Pulsed Drain Current I DM Continuous Source Current (Diode Conduction) a I S 1.5 1.0 Maximum Power Dissipation a T A = 25 °C P D 1.5 1.0 WT A = 70 °C 0.96 0.64 Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambient a t ≤ 10 s R thJA 72 83 °C/WSteady State 100 120 Maximum Junction-to-Foot (Drain) Steady State R thJF 55 70 Available Pb-free RoHS* COMPLIANT N-Channel MOSFET G D S N-Channel MOSFET G D S D G D D G D SO Top View 1 S S www.din-tek.jp DTM9926

Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS T J = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Un it Static Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 0.6 1.6 V Gate-Body Leakage I GSS V DS = 0 V, V GS = ± 4.5 V ± 200 nA Zero Gate Voltage Drain Current I DSS V DS = 20 V, V GS = 0 V 1 µAV DS = 20 V, V GS = 0 V, T J = 70 °C 25 On-State Drain Current b I D(on) V DS ≤ 5 V, V GS = 4.5 V 30 A Drain-Source On-State Resistance b R DS(on) V GS = 4.5 V, I D = 6.5 A 0.0165 0.022 ΩV GS = 2.5 V, I D = 5.5 A 0.023 0.030 Forward Transconductance b g fs V DS = 10 V, I D = 6.5 A 30 S Diode Forward Voltage b V SD I S = 1.5 A, V GS = 0 V 0.71 1.2 V Dynamic a Total Gate Charge Q g V DS = 10 V, V GS = 4.5 V, I D = 6.5 A 12 18 nCGate-Source Charge Q gs 2.2 Gate-Drain Charge Q gd 3.6 Tur n-On Delay Time t d(on) V DD = 10 V, R L = 10 Ω I D ≅ 1 A, V GEN = 4.5 V, R G = 6 Ω 245 365 ns Rise Time t r 330 495 Turn-Off Delay Time t d(off) 860 1300 Fall Time t f 510 765 Gate-Current vs. Gate-Source Voltage 0 3 6 9 12 15 18 - Gate Current (mA)I GSS V GS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 0369 1 2 15 0.01 100 10000 T J = 25 °C - Gate Current (A) I GSS 0.1 1000 V GS - Gate-to-Source Voltage (V) T J = 150 °C www.din-tek.jp DTM9926

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 0 1234 5 V GS = 5 thru 3 V 2 V 2.5 V V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 V GS = 4.5 V V GS = 2.5 V - On-Resistance (Ω)R DS(on) I D - Drain Current (A) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 V GS = 4.5 V I D = 6.5 A T J - Junction Temperature (°C) (Normalized) - On-ResistanceR DS(on) Transfer Characteristics Gate Charge Source-Drain Diode Forward Voltage T C = 125 °C - 55 °C V GS - Gate-to-Source Voltage (V) - Drain Current (A)I D 25 °C 0 3 6 9 12 15 V DS = 10 V I D = 6.5 A - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V GS 1.2 1.5 0.1 0 0.3 0.6 0.9 T J = 25 °C T J = 150 °C V SD - Source-to-Drain Voltage (V) - Source Current (A) I S www.din-tek.jp DTM9926

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0 123456 I D = 6.5 A - On-Resistance (Ω)R DS(on) V GS - Gate-to-Source Voltage (V) 0.001 160 200 100.1 Power (W) Time (s) 120 0.01 Threshold Voltage Safe Operating Area, Junction-to-Case - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 I D = 250 µA Variance (V)V GS(th) T J - Temperature (°C) 100 0.1 1 10 100 0.01 1 ms - Drain Current (A)I D 0.1 Limited by R DS(on) T C = 25 °C Single Pulse 10 ms 100 ms DC 10 s 1 s V DS - Drain-to-Source Voltage (V) GS > minimum V GS at which R DS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 0.1 0.01 1 100 600 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1. Duty Cycle, D = 2. Per Unit Base = R th J A 11 5 °C/W 3. T JM - T A = P DM Z th J A (t ) t t t t Notes: 4. Surface Mounted P DM Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance www.din-tek.jp DTM9926

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Foot 11 010 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance www.din-tek.jp DTM9926

A 1.35 1.7 5 0.053 0.069 A1 0.10 0.2 0 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S

Package Information

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R ECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 0.050 (1.270) 0.022 (0.559) Return to Index R eturn to Index Application Note www.din-tek.jp

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