DTM9435

DTM9435_13 DINTEK | Alldatasheet

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P-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET Power MOSFET  Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY V DS (V) R DS(on) (Ω)I D (A) - 30 0.042 at V GS = - 10 V - 5.8 0.055 at V GS = - 6 V - 5.0 0.060 at V GS = - 4.5 V - 4.4 SD SD S D G D SO-8 Top View S G D P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol 10 s Stead y State Unit Drain-Source Voltage V DS - 30 V Gate-Source Voltage V GS ± 20 Continuous Drain Current (T J = 150 °C) a T A = 25 °C I D - 5.8 - 4.1 A T A Pulsed Drain Current I DM - 30 Continuous Source Current (Diode Conduction) a I S - 2.3 - 1.1 Maximum Power Dissipation a T A = 25 °C P D 2.5 1.3 WT A = 70 °C 1.6 0.8 Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Un it Maximum Junction-to-Ambient a t ≤ 10 s R thJA 40 50 °C/WSteady State 70 95 Maximum Junction-to-Foot (Drain) Steady State R thJF 24 30 www.din-tek.jp DTM9435

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T J = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static Gate Threshold Voltage V GS(th) V DS = V GS , I D = - 250 µA - 1.0 - 3.0 V Gate-Body Leakage I GSS V DS = 0 V, V GS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current I DSS V DS = - 30 V, V GS = 0 V - 1 µAV DS = - 30 V, V GS = 0 V, T J = 70 °C - 5 On-State Drain Current b I D(on) V DS ≤ - 10 V, V GS = - 10 V - 20 AV DS ≤ - 5 V, V GS = - 4.5 V - 5 Drain-Source On-State Resistance b R DS(on) V GS = - 10 V, I D = - 5.8 A 0.033 0.042 ΩV GS = - 6 V, I D = - 5 A 0.043 0.055 V GS = - 4.5 V, I D = - 4.4 A 0.056 0.060 Forward Transconductance b g fs V DS = - 15 V, I D = - 5.8 A 13 S Diode Forward Voltage b V SD I S = - 2.3 A, V GS Dynamic a Total Gate Charge Q g V DS = - 15 V, V GS = - 10 V, I D = - 3.5 A 16 24 nCGate-Source Charge Q gs 2.3 Gate-Drain Charge Q gd 4.5 Gate Resistance R g 8.8 Ω Turn-On Delay Time t d(on) V DD = - 15 V, R L = 15 Ω I D ≅ - 1 A, V GEN = - 10 V, R g = 6 Ω 14 25 ns Rise Time t r 14 25 Turn-Off Delay Time t d(off) 42 70 Fall Time t f 30 50 Source-Drain Reverse Recovery Time t rr I F = - 1.2 A, dI/dt = 100 A/µs 30 60 www.din-tek.jp DTM9435

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 1234 5 V GS = 10 V thru 6 V V DS - Drain-to-Source Voltage (V) I D - Drain Current (A) 3 V 5 V 4 V R DS(on) - On-Resistance (Ω) 0.00 0.03 0.06 0.09 0.12 0.15 04 8 12 1 6 2 0 I D - Drain Current (A) V GS = 6 V V GS = 4.5 V V GS = 10 V V DS = 15 V I D = 3.5 A V GS - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1234 5 T C = 125 °C - 55 °C 25 °C V GS - Gate-to-Source Voltage (V) I D - Drain Current (A) 220 440 660 880 1100 0 5 10 15 20 25 30 V DS - Drain-to-Source Voltage (V) C rss C - Capacitance (pF) C oss C iss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 V GS = 10 V I D = 5.7 A T J - Junction Temperature (°C) R DS(on) - On-Resistance (Normalized) www.din-tek.jp DTM9435

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage T J = 150 °C V SD - Source-to-Drain Voltage (V) I S - Source Current (A) T J = 25 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 I D = 250 µA Variance (V)V GS(th) T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 0 2468 10 I D = 5.8 A R DS(on) - On-Resistance (Ω) V GS - Gate-to-Source Voltage (V) 150 Power (W) Time (s) 120 11 010 10- 10- Safe Operating Area, Junction-to-Foot 100 0.1 1 10 100 0.01 100 ms 0.1 T C = 25 °C Single Pulse 1 s 10 s DC 10 ms 1 ms Limited by R DS(on) V DS - Drain-to-Source Voltage (V) * V DS > minimum V GS at which R DS(on) is specified I D - Drain Current (A) www.din-tek.jp DTM9435

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10- 10- 1 10 60010- 10- 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 70 °C/W 3. T JM T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Junction-to-Foot 10- 10- 11 010- 10- 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance www.din-tek.jp DTM9435

A 1.35 1.7 5 0.053 0.069 A1 0.10 0.2 0 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S

Package Information

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R ECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 0.050 (1.270) 0.022 (0.559) Return to Index R eturn to Index Application Note www.din-tek.jp

PRODUCT, PRODU CT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertech nology, Inc. hereby certi fies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Legal Disclaimer Notice www.din-tek.jp