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N-Channel 30-V (D-S) MOSFET FE ATURES
- Halogen-fr ee According to IEC 61249-2-21 Definition T r e n c h F E T® P ower MOSFET Compliant to RoHS Directive 2002/95/EC APPLIC ATIONS Notebook Load Switch Low Current dc-to-dc P RODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (T yp.) 0.0195 at VGS = 10 V 9.2 nC 0.023 at VGS = 4.5 V Notes: Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS 30 VGate-Source V oltage VGS ± 20 C ontinuous Drain Current (TJ = 150 °C TC = 25 °C ID A TC = 70 °C TA = 25 °C 7.5b, c TA = 70 °C 5.9b, c Pulsed Dr ain Current IDM 30 C ontinuous Source-Drain Diode Current TC = 25 °C IS 2.7 TA = 25 °C 1.7b, c Ma ximum Power Dissipation TC = 25 °C PD 4.1 WTC = 70 °C 2.6 TA = 25 °C 2b, c TA = 70 °C 1.25b, c Oper ating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C T HERMAL RESISTANCE RATINGS P arameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s Rth JA 45 62.5 °C/WMaximum Junction-to-Foot Steady State Rth JF 25 SO-8 SD SD SD GD 5 T op View N-Channel MOSFET G D S DT. www.daysemi.jp
tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V , ID = 250 µA 30 V VDS T emperature Coefficient ΔVDS/TJ ID = 250 µA 33 mV/°CVGS( th) T emperature Coefficient ΔVGS(th)/TJ - 6 Gate-Source Threshold Voltage VGS(t h) VDS = VGS, ID = 250 µA 13 V Gate-Source Leakage IGSS VDS = 0 V , VGS = ± 20 V ± 1 00 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 µAVDS = 30 V , VGS = 0 V , TJ = 55 °C 10 On-State Drain Currenta ID( on) VDS ≥ 5 V , VGS = 10 V 20 A Drain-Source On-State Resistancea RDS( on) VGS = 10 V , ID = 5 A 0.016 0.0195 ΩVGS = 4.5 V, ID = 4 A 0.019 0.023 Forward Transconductancea gfs VDS = 10 V , ID = 5 A 24 S Dy namicb Inpu t Capacitance Cis s VDS =
15 V, VGS = 0
V, f = 1 MHz 1295 pFOutput Capacitance Coss 170 Re verse Transfer Capacitance Crs s 72 T otal Gate Charge Qg VDS = 15 V , VGS = 10 V , ID = 5 A 21.8 nCVDS = 15 V , VGS =
4.5 V, ID = 5 A
9.2 Gate-Source Charge Qgs 3.8 Gate- Drain Charge Qgd 2.5 G ate Resistance Rg f = 1 MH z 2.4 Ω Tur n-On Delay Time td( on) VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V , Rg = 1 Ω ns Rise Time tr 14 Turn-Off DelayTime td( off) 20 Fall Time tf 91 Tur n-On Delay Time td( on) VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN =
10 V, Rg = 1
Ω 10 20 Rise Time tr 81 Turn-Off DelayTime td( off) 21 Fall Time tf 81 Drain -Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 ° C 2.7 APulse Diode Forward Current ISM 30 Body Diode V oltage VSD IS = 1.7 A, VGS = 0 V 0.77 1.2 V Body Diode Reverse Recovery Time trr IF = 3 A, d I/dt = 100 A/µs, TJ = 25 °C 21 40 ns Body Diode Reverse Recovery Charge Qrr 15 30 nC Reverse Recovery Fall Time ta 13 nsRe verse Recovery Rise Time tb 8 DT. www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted Ou tput Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0.0 VGS = 10 V thru 4 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 3 V 0.010 0.014 0.018 0.022 0.026 0.030 6 12 18 24 30 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V ID = 5 A 5 10 15 20 25 - Gate-to-Source Voltage (V) Qg - T otal Gate Charge (nC) VGS VDS = 10 V VDS = 20 V VDS = 15 V Tran sfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.3 0.6 0.9 1.2 1.5 012345 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID TC = 25 °C TC = 125 °C TC = - 55 °C Crss 320 640 960 1280 1600 1 2 1 8 24 30 Cos s Cis s VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) - 50 - 25 0 25 50 75 100 125 150 TJ - Junction T emperature (°C) RDS(on) - On-Resistance (Normalized) 0.7 0.9 1.1 1.3 1.5 1.7 VGS = 4.5 V VGS = 10 V ID = 5 A DT. www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Sou rce-Drain Diode Forward Voltage Threshold Voltage 0.001 0.01 0.1 100 0.0 VSD - Source-to-Drain Voltage (V) - Source Current (A)IS TJ = 25 °C TJ = 150 °C - 0.9 - 0.6 - 0.3 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 Variance (V)VGS(th) TJ - T emperature (°C) ID = 250 µA ID = 5 mA On-Resistance vs . Gate-to-Source Temperature Single Pulse Power, Junction-to-Ambient 0.02 0.04 0.06 0.08 0.10 2345678 91 0 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) TA = 125 °C TA = 25 °C Power (W) T ime (s) 00.10.010.001 Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 100 - Drain Current (A)I D 0.1 1 10 100 TA = 25 °C Single Pulse 1 s, 10 s 10 ms 100 ms DC Limited by R *DS(on) VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 1 ms DT. www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted * T he power dissipation P D is based on T J( max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dis sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 25 50 75 100 125 150 TC - Case T emperature (°C) ID - Drain Current (A) Package Limited Po wer Derating, Junction-to-Foot 25 50 75 100 125 150 TC - Case T emperature (°C) Power (W) Po wer Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150 TA - Ambient T emperature (°C) Power (W) DT. www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted No rmalized Thermal Transient Impedance, Junction-to-Ambient 0.001 0.1 10-3 10-2 0 0 0 10 1110-110-4 100 0.2 0.1 0.05 0.02 Square Wave Pulse Duration (s) Normalized Ef fective Transient Thermal Impedance Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.01 No rmalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective Transient Thermal Impedance 0.1 0.01 0.05 0.02 Single Pulse DT. www.daysemi.jp
www.daysemi.jp DIM MILLIMETERS INCHES Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 H E h x 45 C All Leads q 0.101 mm 0.004"LBA A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S
Package Information
www.daysemi.jp APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Index Application Note
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