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Technical content

N-Channel 100 V (D-S) MOSFET

FEATURES

  • Halogen-free Acc ording to IEC 61249-2-21 Definition  Extremely Low Q gd for Sw itching Losses  100 % R g Tested 100 % Avalanche Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 P rimary Side Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A)a Qg (Typ.) 100 045 at VGS = 10 V 9.7 23 nC .047 at VGS = 8 V 7.5 SO-8 SD SD SD GD 5 Top View N-Channel MOSFET G D S Notes: a. Base d on TC = 25 °C b. Surface mounted on 1” x 1” FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Pa rameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate -Source Voltage VGS ± 20 Continuous D rain Current (TJ = 150 °C TC = 25 °C ID 9.7 A TC = 70 °C 6.1 TA = 25 °C 5.5b, c TA = 70 °C 4.5b, c Pulsed Dra in Current IDM 50 Continuous Sou rce-Drain Diode Current TC = 25 °C IS 4.5 TA = 25 °C 2.6b, c Single Pulse Av alanche Current L = 0.1 mH IAS 20 Single Pulse Av alanche Energy EAS 20 mJ Maxi mum Power Dissipation TC = 25 °C PD 5.9 WTC = 70 °C 3.8 TA = 25 °C 3.1b, c TA = 70 °C 2b, c Oper ating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESIST ANCE RATINGS Paramet er Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 33 40 °C Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 DT. www.daysemi.jp

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % a. Guaranteed by design, not subject to production testing. Stresses b eyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symb ol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown V oltage VDS VGS = 0 V, ID = 25 0 µA 100 V VDS Temperature Coefficient ΔVDS /TJ ID = 250 µA 172 mV/°CVGS(th) Temperature Coefficient ΔVGS(th) /TJ - 10 Gate-Source Thresho ld Voltage VGS(th) VDS = VGS , ID = 250 µA 2.5 4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Z ero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 55 °C 10 On-State Dr ain Currenta ID(on) V DS ≥ 10 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 5 A 0.036 0.045 ΩVGS = 8 V, ID = 5 A 0.0375 0.047 F orward Transconductancea gfs VDS = 15 V, ID = 5 A 23 S Dynami cb Input Capacitan ce Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz 735 pFOutput Capacitance Coss 16 0 Rev erse Transfer Capacitance Crss 37 Total Gate Charge Qg VDS = 75 V, VGS = 10 V, ID = 5 A 28.5 4 nCVDS = 75 V, VGS = 8 V, ID = 5 A 23 35 Gate-So urce Charge Qgs 8 Gate-Dra in Charge Qgd 6.5 Gate Re sistance Rg f = 1 MHz 0.85 1.3 Ω T urn-on Delay Time td(on) VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 14 21 ns Rise Time tr 12 18 Tur n-Off Delay Time td(off) 22 33 Fal l Time tf 61 0 Tur n-On Delay Time td(on) VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 16 24 Rise Time tr 12 18 Tur n-Off Delay Time td(off) 20 30 Fal l Time tf 71 2 Drain-So urce Body Diode Characteristics Continuous Source-Drain Diode Current I S TC = 25 °C 7.7 APulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 2.6 A 0.77 1.2 V Body Diode Reverse Recovery Time trr IF = 5 A, dI/dt = 100 A/µs , TJ = 25 °C 63 95 ns Body Diode Reverse Recovery Charge Q rr 110 165 nC Reverse Recovery Fall Time ta 49 nsReverse Reco very Rise Time tb 14 DT. www.daysemi.jp

HARACTERISTICS (25 °C, unless otherwise noted) Output Charac teristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 012345 VDS - Drain-to-Source Voltage (V) ) A ( t n e r ruC n i a r D - ID V = 10 V thru 7 V V = 6 V V = 5 V GS GS GS 0.035 0.039 0.043 0.047 0.051 0.055 0 1 02 03 04 05 06 0 I D - Drain Current (A) VGS = 10 V R ) n o ( S D (Ω) e c n a t s i s e R - n O - VGS = 8 V 0 6 12 18 24 30 ID = 5 A )V( e g a t l oV e c ruo S - o t - e t a G - Qg - Total Gate Charge (nC) V S G VDS = 50 V VDS = 100 V VDS = 75 V Tr ansfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.3 0.6 0.9 1.2 02468 10 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ) A ( t n e r ruC n i a r D - ID Crss0 400 800 1200 1600 2000 02 0 4 0 6 0 80 100 Coss Ciss VDS - Drain-to-Source Voltage (V) ) F p ( e c n a t i c a p a C - C 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperat ure (°C) R ) n o ( S D e c n a t s i s e R - n O - ) d e z i l a m r oN( VGS = 10 V I D = 5 A VGS = 8 V DT. www.daysemi.jp

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Source- Drain Diode Forward Voltage Threshold Voltage 0.1 0.01 0.001 VSD - Source-to-Drain Voltage (V) - (A) t n e r ruC e c ruo S IS 100 TJ = 25 °C TJ = 150 °C - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 - 50 - 25 0 25 50 75 100 125 150 ID = 5 mA TJ - Temperat ure ( C) V ) h t ( S G)V( On -Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 02468 10 V GS - Gate-to-Source Voltage (V) R ) n o ( S D (Ω) e c n a t s i s e R - n O e c ruo S - o t - n i a r D - ID = 5 A = 125 °C JT TJ = 25 °C 120 200 )W( r ewo P Time (s) 160 11 00.10.010.001 Safe Operating Area, Ju nction-to-Ambient * VGS minimum VGS at which RDS( on) is specified 100 0.01 ) A ( t n e r ruC n i a r D - ID 0.1 VDS - Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 TA = 25 °C Single Pulse 1 s 10 s DC 10 ms 100 ms 1 ms Limited by RDS( on)* DT. www.daysemi.jp

HARACTERISTICS (25 °C, unless otherwise noted) * The po wer dissipation P D is based on TJ(ma x) = 150 ° C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 ID ) A ( t n e r ruC n i a r D - TC - Case Te mperature (°C) Powe r, Junction-to-Case 0.0 1.6 3.2 4.8 6.4 8.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Powe r, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) r (W) ewo P DT. www.daysemi.jp

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized T hermal Transient Impedance, Junction-to-Ambient 10-3 10-2 10-1 100 Square Wave P ulse Duration (s) 10 10001 0.1 0.01 t n e i s n a r T evi t c e f f E d e z i l a m r oN e c n a d e p m I l a m r e h T 10-4 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Notes: PDM 0.2 0.1 0.05 0.02 Single Pu lse Duty Cycle = 0.5 Nor malized Thermal Transient Impedance, Junction-to-Foot 10-310 0.1 0.01 Square Wave P ulse Duration (s) t n e i s n a r T evi t c e f f E d e z i l a m r oN e c n a d e p m I l a m r e h T -4 10 0.2 0.05 Single Pu lse Duty Cycle = 0.5 0.02 10-2 10-1 1 DT. www.daysemi.jp

www.daysemi.jp DIM MILLIMETERS INCHES Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 H E h x 45 C All Leads q 0.101 mm 0.004"LBA A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S

Package Information

www.daysemi.jp APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Index Application Note

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