DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

Halogen-free According to IEC 61249-2-21 Definition

  • TrenchFET ® Power MOSFET  100 % UIS Tested  100 % R g Test ed  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Low Current DC/DC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A ) Q g (T yp.) 0.0355 at VGS = 10 V 6.5 3.7 nC 0.044 at VGS = 4.5 V 5.8 G1 D1 G2 D2 SO-8 To p View 1 S1 N-Channel MOSFET N-Channel MOSFET Notes: Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS 30 VGate-Source V oltage VGS ± 2 Continuous Drain Current (TJ = 150 °C TC = 25 °C ID 6.5a A TC = 70 °C 5. TA = 25 °C 5.2b, c TA = 70 °C 4.2b, c Pulsed Dr ain Current IDM 24 C ontinuous Source-Drain Diode Current TC = 25 °C IS TA = 25 °C 1.48b, c Single Pulse A valanche Current L = 0.1 mH IAS 5 Single Pulse A valanche Energy EAS 1. 25 mJ Maximum Power Dissipation TC = 25 °C PD WTC = 70 °C 1. TA = 25 °C 1.78b, c TA = 70 °C 1.14b, c Oper ating Junction and Storage Temperature Range TJ, Tstg - 5 5 to 150 °C T HERMAL RESISTANCE RATINGS P arameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c , d t ≤ 10 s RthJ A 58 70 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 38 DT. www.daysemi.jp

tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V , ID = 250 µA 30 V VDS T emperature Coefficient ΔVDS /TJ ID = 250 µA 32 mV/°CVGS( th) T emperature Coefficient ΔVGS( th)/TJ - 5. Gate-Source Threshold Voltage VGS( th) VDS = VGS , ID = 250 µ A 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V , VGS = ±

20 V ± 100 nA

Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 µAVDS = 30 V, VGS = 0 V , TJ = 55 °C On-State Drain Currenta ID(on) V DS ≥ 5 V , VGS = 10 V 10 A Drain-Source On-State Resistancea RDS( on) VGS = 10 V , ID = 5 A 0.0295 0.0355 ΩVGS = 4.5 V , ID = 4 A 0.036 0.044 Forward Transconductancea gfs VDS = 1

0 V, ID = 5

VDS = 15 V , VGS = 0 V , f = 1 MHz 445 pFOutput Capacitance Cos s 75 Re verse Transfer Capacitance Crs s 37 T otal Gate Charge Qg VDS = 15 V , VGS = 10 V , ID = 5 A 81 nCVDS = 15 V , VGS = 4.5 V , ID = 5 A 3.7 5.6 Gate-Source Charge Qgs 1.4 Gate- Drain Charge Qgd 1.05 G ate Resistance Rg f = 1 MHz 0.8 4.3 8.6 Ω Tur n-On Delay Time td( on) VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V , Rg = 1 Ω ns Rise Time tr 55 100 Turn-Off Delay Time td( off) 11 Fall Time tf 81 Tur n-On Delay Time td( on) VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V , Rg = 1 Ω Rise Time tr 91 Turn-Off Delay Time td( off) 10 Fall Time tf 61 Drain -Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.25 A Pulse Diode Forward Current ISM 24 Body Diode V oltage VSD IS = 2 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 5 A, dI/dt = 100 A/µs , TJ = 25 11 20 ns Body Diode Reverse Recovery Charge Qrr 48 n C Reverse Recovery Fall Time ta 7 ns Re verse Recovery Rise Time tb 4 DT. www.daysemi.jp

L CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 VGS =1 0V thru 5 V VGS =4V VGS =3V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.000 0.016 0.032 0.048 0.064 0.080 6 12 18 24 30 VGS =4 . 5V VGS =1 - On -Resistance (Ω)RDS( on) ID - Drain Current (A) 0.0 VDS =1 VDS =1 ID =5A VDS =2 - Gate -to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS T ransfer Characteristics Capacitance On-Resistance vs. Junction Temperature 12345 TC = 25 °C TC =1 2 5 ° C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss 110 220 330 440 550 1 2 1 8 24 30 Cis s Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 ID =5A VGS =4 . 5V VGS =1 TJ -J unction Temperature (°C) (Normalized) - On -ResistanceRDS( on) DT. www.daysemi.jp

PICAL CHARACTERISTICS 25 °C, unless otherwise noted So urce-Drain Diode Forward Voltage Threshold Voltage 0.0 0.01 0.001 0.1 100 TJ = 150 °C TJ = 25 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5m A Variance (V)VGS( th) TJ - Temperature (°C) On-Resista nce vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.03 0.06 0.09 0.12 0.15 012 34567 8 91 0 ID =5A TJ =2 5 ° C TJ = 125 °C - On -Resistance (Ω)RDS (on) VGS - Gate-to-Source Voltage (V) Power (W) Time (s) 10000.10.010.001 1001 Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse 100 ms Limited byR DS (on)* BVDSS Limited s ms s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS (on) is specified Drain Current (A)ID DT. www.daysemi.jp

L CHARACTERISTICS 25 °C, unless otherwise noted The power dissipation PD is based on TJ( max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- sipation limit for cases where additional heat sinking is used. It is used to determine the current rating, when this rating fal ls below the package limit. Current Derating* 0.0 1.5 3.0 4.5 6.0 7.5 25 50 75 100 125 150 TC - Case Temperature (°C) I D - Drain Current (A) Pow er, Junction-to-Foot 0.0 0.7 1.4 2.1 2.8 3.5 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Po wer, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150 TA -A mbient Temperature (°C) Power (W) DT. www.daysemi.jp

www.daysemi.jp DIM MILLIMETERS INCHES Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 H E h x 45 C All Leads q 0.101 mm 0.004"LBA A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S

Package Information

www.daysemi.jp APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Index Application Note

www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.

PICAL CHARACTERISTICS 25 °C, unless otherwise noted Norm alized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM Duty Cycle, D = 2. Per Unit Base = RthJA =1 1 0 ° C /W 3. TJM -T A =P DMZthJA(t) Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 No rmalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 DT. www.daysemi.jp