DTM4606BDY

DTM4606BDY DINTEK | Alldatasheet

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Technical content

N- and P-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET Power MOSFET  100 % R g Tested  100 % UIS Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 DC/DC Converter  Load Switch PRODUCT SUMMARY V DS (V) R DS(on) ()I D (A) a Q g (Typ.) N-Channel 30 0.018 at V GS = 10 V 7.0 2.75 0.024 at V GS = 4.5 V 5.2 P-Channel - 30 0.036 at V GS = - 10 V - 6.9 4.1 0.040 at V GS = - 4.5 V - 5.4 S D G D S D G D SO-8 Top View N-Channel MOSFET D G S S G D P-Channel MOSFET Notes: a. Based on T C = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 - 30 V Gate-Source Voltage V GS ± 20 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D 7.0 - 6.9 A T C = 70 °C 4.9 - 4.4 T A = 25 °C 5.9 b, c - 5.4 b, c T A = 70 °C 3.9 b, c - 3.7 b, c Pulsed Drain Current (10 µs Pulse Width) I DM 24 - 15 Source-Drain Current Diode Current T C = 25 °C I S 2.3 - 2.3 T A = 25 °C 1.5 b, c - 1.5 b, c Pulsed Source-Drain Current I SM 24 - 12 Single Pulse Avalanche Current L = 0.1 mH I AS Single Pulse Avalanche Energy E AS 2.5 3.2 mJ Maximum Power Dissipation T C = 25 °C P D 2.78 2.78 W T C = 70 °C 1.78 1.78 T A = 25 °C 1.78 b, c 1.78 b, c T A = 70 °C 1.14 b, c 1.14 b, c Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambient b, d t  10 s R thJA 57 70 57 70 °C/W Maximum Junction-to-Foot (Drain) Steady State R thJF 37 45 37 45 www.din-tek.jp DTM4606BDY

SPECIFICATIONS (T J = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. a Max. U nit Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 µA N-Ch 30 VV GS = 0 V, I D = - 250 µA P-Ch - 30 V DS Temperature Coefficient V DS J I D = 250 µA N-Ch 33 mV/°C I D = - 250 µA P-Ch - 33 V GS(th) Temperature Coefficient V GS(th) J I D = 250 µA N-Ch - 5.8 II D = - 250 µA P-Ch 4.5 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA N-Ch 1.0 3.0 VV DS = V GS , I D Gate-Body Leakage I GSS V DS = 0 V, V GS = ± 20 V N-Ch 100 nAP-Ch - 100 Zero Gate Voltage Drain Current I DSS V DS = 30 V, V GS = 0 V N-Ch 1 µA V DS = - 30 V, V GS = 0 V P-Ch - 1 V DS = 30 V, V GS = 0 V, T J = 55 °C N-Ch 5 V DS = - 30 V, V GS = 0 V, T J = 55 °C P-Ch - 5 On-State Drain Current b I D(on) V DS =5 V, V GS = 10 V N-Ch 20 AV DS = -5 V, V GS = - 10 V P-Ch - 12 Drain-Source On-State Resistance b R DS(on) V GS = 10 V, I D = 3.5 A N-Ch 0.011 0.018 V GS = - 10 V, I D = - 3.5 A P-Ch 0.023 0.036 V GS = 4.5 V, I D = 2.8 A N-Ch 0.012 0.024 V GS = - 4.5 V, I D = - 2.5 A P-Ch 0.03 0.04 Forward Transconductance b g fs V DS = 15 V, I D = 2.5 A N-Ch 7 SV DS = - 15 V, I D = - 3.5 A P-Ch 7 Dynamic a Input Capacitance C iss N-Channel V DS = 15 V, V GS = 0 V, f = 1 MHz P-Channel V DS = - 15 V, V GS = 0 V, f = 1 MHz N-Ch 305 pF P-Ch 340 Output Capacitance C oss N-Ch 65 P-Ch 67 Reverse Transfer Capacitance C rss N-Ch 29 P-Ch 51 Total Gate Charge Q g V DS = 15 V, V GS = 10 V, I D = 2.5 A N-Ch 6 9 nC V DS = - 15 V, V GS = - 10 V, I D = - 2.5 A P-Ch 7.8 12 N-Channel V DS = 15 V, V GS = 4.5 V I D = 2.5 A P-Channel V DS = - 15 V, V GS = - 4.5 V, I D = - 2.5 A N-Ch 2.75 4.5 P-Ch 4.1 6.2 Gate-Source Charge Q gs N-Ch 1.3 P-Ch 1.3 Gate-Drain Charge Q gd N-Ch 0.9 P-Ch 1.8 Gate Resistance R g f = 1 MHz N-Ch 0.6 3.1 6.2 P-Ch 2.0 10 20 www.din-tek.jp DTM4606BDY

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (T J = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. a Max. Un it Dynamic a Tur n-On Delay Time t d(on) N-Channel V DD = 15 V, R L = 15  I D  1 A, V GEN = 10 V, R g = 1  P-Channel V DD = - 15 V, R L = 15  I D  - 1 A, V GEN = - 10 V, R g = 1  N-Ch 7 11 ns P-Ch 5.5 10 Rise Time t r N-Ch 12 18 P-Ch 13 25 Turn-Off Delay Time t d(off) N-Ch 14 25 P-Ch 17 30 Fall Time t f N-Ch 6 10 P-Ch 7.7 15 Tur n-On Delay Time t d(on) N-Channel V DD = 15 V, R L = 15  I D  1 A, V GEN = 4.5 V, R g = 1  P-Channel V DD = - 15 V, R L = 15  I D  - 1 A, V GEN = - 4.5 V, R g = 1  N-Ch 16 30 P-Ch 40 60 Rise Time t r N-Ch 16 30 P-Ch 40 60 Turn-Off Delay Time t d(off) N-Ch 9 18 P-Ch 20 40 Fall Time t f N-Ch 9 18 P-Ch 17 30 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C N-Ch 4.3 AP-Ch - 4.3 Pulse Diode Forward Current a I SM N-Ch 24 P-Ch - 12 Body Diode Voltage V SD I S = 1.25 A N-Ch 0.8 1.2 VI S Body Diode Reverse Recovery Time t rr N-Channel I F = 1.25 A, dI/dt = 100 A/µs, T J = 25 °C P-Channel I F = - 2.5 A, dI/dt = - 100 A/µs, T J = 25 °C N-Ch 14 21 nsP-Ch 17 30 Body Diode Reverse Recovery Charge Q rr N-Ch 6 10 nCP-Ch 11 20 Reverse Recovery Fall Time t a N-Ch 9 nsP-Ch 12 Reverse Recovery Rise Time t b N-Ch 5 P-Ch 5 www.din-tek.jp DTM4606BDY

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0246 8 10 V GS =1 0 V thru 6 V V GS =4 V V GS =5 V V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D - On-Resistance () R DS(on) 0.00 0.02 0.04 0.06 0.08 0.10 0 2 4 6 8 10 12 14 16 I D - Drain Current (A) V GS = 4.5 V V GS = 10 V 02 46 I D =2 .5 A V DS =2 2.5 V V DS =7 .5 V V DS =1 5 V - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V GS Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 012 3 45 T C = 25 °C T C = 125 °C T C = - 55 °C V GS - Gate-to-Source Voltage (V) - Drain Current (A)I D 100 150 200 250 300 350 400 0 5 10 15 20 25 30 V DS - Drain-to-Source Voltage (V) C rss C oss C iss C - Capacitance (pF) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 I D =6A V GS =4 .5 V V GS =1 0 V T J -J unction Temperature (°C) (Normalized) - On-ResistanceR DS(on) www.din-tek.jp DTM4606BDY

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage T J = 150 °C T J = 25 °C 0.1 V SD - Source-to-Drain Voltage (V) - Source Current (A)I S - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 I D = 250 µA Variance (V)V GS(th) T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.05 0.10 0.15 0.20 0.25 012 345 67 8 91 0 T J =2 5 °C T J = 125 °C - On-Resistance (Ω)R DS(on) V GS - Gate-to-Source Voltage (V) 0 111 0 0 .00 .01 Time (s) Power (W) 0.1 Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 T A = 25 °C Single Pulse 100 µs Limited byR DS(on) BVDSS Limited 1m s 10 ms 100 ms 10 s 10 µs V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified - Drain Current (A)I D 100 s, DC www.din-tek.jp DTM4606BDY

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is b ased on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 Package Limited T C - Case Temperature (°C) I D - Drain Current (A) Power Derating, Junction-to-Foot 0.0 0.7 1.4 2.1 2.8 3.5 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 T A -A mbient Temperature (°C) Power (W) www.din-tek.jp DTM4606BDY

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 10 100010 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 t t Notes: P DM 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 120 °C/W 3. T JM A DM Z thJA(t) t t 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 0 1110 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 0.02 Single Pulse www.din-tek.jp DTM4606BDY

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D V GS =5 V V GS =1 0 V thru 6 V V GS =4 V V GS =3 V - On-Resistance (Ω)R DS(on) I D - Drain Current (A) 0.00 0.05 0.10 0.15 0.20 0 3 6 9 12 15 V GS =1 0 V V GS =4 .5 V I D =2 .5 A 024 6 8 - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V GS V DS =2 2.5 V V DS =7 .5 V V DS =1 5 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 V GS - Gate-to-Source Voltage (V) - Drain Current (A)I D T C = 25 °C T C = 125 °C T C = - 55 °C 150 300 450 600 0 6 12 18 24 30 C iss V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) C oss C rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 T J -J unction Temperature (°C) (Normalized) - On-ResistanceR DS(on) V GS =1 0 V V GS =4 .5 V I D =3 .2 A www.din-tek.jp DTM4606BDY

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage V SD -S ource-to-Drain Voltage (V) - Source Current (A)I S 0.1 0.01 T J = 150 °C 0.001 T J = - 50 °C T J = 25 °C -0.4 -0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 I D = 250 µA Variance (V)V GS(th) T J - Temperature (°C) I D =1m A On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.1 0.2 0.3 0.4 024 6 8 10 - On-Resistance (Ω)R DS(on) V GS - Gate-to-Source Voltage (V) T J = 25 °C T J = 125 °C I D = 3.5 A 0 111 0 0 . 0 0.01 Time (s) Power (W) 0.1 Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 T A = 25 °C Single Pulse 100 µs Limited byR DS(on) BVDSS Limited 1m s 10 ms 100 ms 100 s, DC 10 µs V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified - Drain Current (A)I D 10 s www.din-tek.jp DTM4606BDY

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is b ased on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 T C - Case Temperature (°C) I D - Drain Current (A) Power Derating, Junction-to-Foot 0.0 0.7 1.4 2.1 2.8 3.5 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 T A -A mbient Temperature (°C) Power (W) www.din-tek.jp DTM4606BDY

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 10 100010 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 t t Notes: P DM 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 110 °C/W 3. T JM A DM Z thJA(t) t t 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 0 1110 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 0.02 Single Pulse www.din-tek.jp DTM4606BDY

A 1.35 1.7 5 0.053 0.069 A1 0.10 0.2 0 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S

Package Information

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R ECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 0.050 (1.270) 0.022 (0.559) Return to Index R eturn to Index Application Note www.din-tek.jp

PRODUCT, PRODU CT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertech nology, Inc. hereby certi fies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Legal Disclaimer Notice www.din-tek.jp