DTM4606 BYCHIP | Alldatasheet

Document overview

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Technical content

Features

  • Advanced Trench Technology
  • Provide Excellent RDS(ON) and Low Gate Charge
  • Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features
  • N-Channel: 30V, 10A RDS(ON)< 15 mΩ @ VGS = 10V RDS(ON) <23 mΩ @ VGS = 4.5V
  • P-Channel: -30V, -12A RDS(ON)< 34 mΩ@ VGS = -10V RDS(ON) < 49 mΩ @ VGS = -4.5V SOP-8 Dual Schematic diagram N-Channel and P-Channel Enhancement Mode Power MOSFET www.bychip.cn Pin $ssignment DTM4606 v1.0

■ NMOS Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V - - 1 μA VDS=30V, VGS=0V, Tj=150℃ - - 100 Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.0 2.5 V Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=7A - 15 mΩ VGS=4.5V, ID=5A - 23 Diode Forward Voltage VSD IS=7A, VGS=0V - - 1.2 V Gate resistance RG f=1MHz - 2 - Ω Maximum Body-Diode Continuous Current IS - - 7 A Dynamic Parameters Input Capacitance Ciss VDS=15V, VGS=0V, f=1MHz - 380 - pF Output Capacitance Coss - 75 - Reverse Transfer Capacitance Crss - 60 - Switching Parameters Total Gate Charge Qg VGS=10V, VDS=15V, ID=7A - 12.5 - nC Gate-Source Charge Qgs - 2.5 - Gate-Drain Charge Qgd - 2.5 - Reverse Recovery Charge Qrr IF=7A, di/dt=100A/us - 1.5 - nC Reverse Recovery Time trr - 16 - ns Turn-on Delay Time tD(on) VGS=10V, VDD=15V, ID=7A RGEN=3Ω - 5 - ns Turn-on Rise Time tr - 30 - Turn-off Delay Time tD(off) - 15 - Turn-off fall Time tf - 20 - www.bychip.cn DTM4606 v2.0

■ PMOS Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V - - -1 μA VDS=-30V, VGS=0V, Tj=150℃ - - -100 Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -1.0 -2.5 V Static Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-5A - 34 mΩ VGS=-4.5V, ID=-3.5A - 49 Diode Forward Voltage VSD IS=-5A, VGS=0V - - -1.2 V Gate resistance RG f=1MHz - 15 - Ω Maximum Body-Diode Continuous Current IS - - -5 A Dynamic Parameters Input Capacitance Ciss VDS=-15V, VGS=0V, f=1MHz - 490 - pF Output Capacitance Coss - 75 - Reverse Transfer Capacitance Crss - 60 - Switching Parameters Total Gate Charge Qg VGS=-10V, VDS=-15V, ID=-5A - 9 - nC Gate-Source Charge Qgs - 1.5 - Gate-Drain Charge Qgd - 2.3 - Reverse Recovery Charge Qrr IF=-5A, di/dt=100A/us - 12 - nC Reverse Recovery Time trr - 32 - ns Turn-on Delay Time tD(on) VGS=-10V, VDD=-15V, ID=-5A RGEN=2.5Ω - 9 - ns Turn-on Rise Time tr - 3 - Turn-off Delay Time tD(off) - 29 - Turn-off fall Time tf - 15 - A. Repetitive rating; pulse width limited by max. junction temperature. B. Pd is based on max. junction temperature, using junction-case thermal resistance. C. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in the still air environment with TA =25℃. The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design. www.bychip.cn DTM4606 v3.0