DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Document Number: 64 732 S09-0314-Rev. A, 02-Mar-09 www.GD\\VHPLMS P-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free Acc ording to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET 100 % Rg Tested

APPLICATIONS

 Loa d Switches - Notebook PCs - Desktop PCs PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (T yp.) - 30 0.0098 at VGS = 10 V - 19.7 27 nC 0.0165 at VGS = 4.5 V - 15.2 SO-8 SD SD SD GD 5 Top V iew S G D P-Channel MOSFET Notes: a. Base d on TC = 25 °C b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Pa rameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate -Source Voltage VGS ± 20 Continuous D rain Current (TJ = 150 °C TC = 25 °C ID - 19.7 A TC = 70 °C - 15.7 TA = 25 °C - 13b, c TA = 70 °C - 10. 4b, c Pulsed Dra in Current IDM - 50 Continous Source-Drain Di ode Current TC = 25 °C IS - 4.7 TA = 25 °C - 2.1b, c Maxi mum Power Dissipation TC = 25 °C PD 5.7 W TC = 70 °C 3. TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Oper ating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESIST ANCE RATINGS Parameter Symb ol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 35 50 °C Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 DT. www.daysemi.jp

www.GD\\VHPLMS Documen t Number: 64732 S09-0314-Rev. A, 02-Mar-09 Not es: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIF ICATIONS TJ = 25 °C, unless otherwise noted Pa rameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temper ature Coefficient ΔVDS/TJ ID = - 250 µA - 20 mV/°C VGS(t h) Temperature Co efficient ΔVGS(t h)/TJ 4.9 Gate-So urce Threshold Voltage VGS( th) VDS = VGS , ID = - 250 µA - 1. 2 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ±

20 V ± 100 nA

Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) V DS ≤ - 5 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 13 A 0.0081 0.0098 ΩVGS = - 4.5 V, ID = - 10 A 0.0137 0.0165 Forward Transconductancea gfs VDS = - 15 V, ID = - 13 A 40 S Dynam icb Input Capacita nce Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 2610 pFOutput Capacitance Coss 460 Re verse Transfer Capacitance Crss 395 T otal Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 13 A 53 nC VDS = - 15 V, VGS = - 4.5 V , ID = - 13 A 27 41 Gate-Source Charge Qgs 8 Gate-Dr ain Charge Qgd 13 Ga te Resistance Rg f = 1 MHz 0.4 2.1 4.2 Ω Tur n-On Delay Time td(o VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A , VGEN = - 4.5 V, Rg = 1 Ω 52 7 ns Rise Time tr 41 6 Turn-Off Delay Time td(off) 36 5 Fall Time tf 15 2 Tur n-On Delay Time td(o VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V , Rg = 1 Ω 12 2 Rise Time tr 91 5 T urn-Off Delay Time td(off) 42 6 Fall Time tf 91 5 Drain- Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 4.7 A Pulse Diode Forward Current ISM - 50 Body Diode V oltage VSD IS = - 10 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt =

100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta 10 ns Rev erse Recovery Rise Time tb 9 DT. www.daysemi.jp

Document Number: 64 732 S09-0314-Rev. A, 02-Mar-09 www.GD\\VHPLMS TYPICAL C HARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.5 1.0 1.5 2.0 VGS =1 0 V thru 4 V VGS =3V VDS - Drain -to-Source Voltage (V) - Drain Cu rrent (A)I D 0.000 0.005 0.010 0.015 0.020 0 1 02 03 04 05 0 VGS =1 0 V VGS =4 . 5 V - On- Resistance (Ω)RDS(on) ID - Drain Current (A) 0 1 02 03 04 05 06 0 ID =1 3A VDS =2 4 V VDS =1 5 V - Gate- to-Source Voltage (V) Qg - T otal Gate Charge (nC) VGS Transfer Ch aracteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 01234 TC = 25 °C TC =1 2 5 ° C TC =- 5 5 ° C VGS - G ate-to-Source Voltage (V) - Drain Cu rrent (A)I D Crss 1000 2000 3000 4000 0 5 10 15 20 25 30 Ciss Coss VDS - Drain -to-Source Voltage (V) C - Capacitance (pF) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 ID =1 3A VGS =4 . 5 V VGS =1 0 V TJ -J unction T emperature (°C) (Normalized) - On- ResistanceRDS(on) DT. www.daysemi.jp

www.GD\\VHPLMS Documen t Number: 64732 S09-0314-Rev. A, 02-Mar-09 TYPI CAL CHARACTERISTICS 25 °C, unless otherwise noted Sour ce-Drain Diode Forward Voltage Threshold Voltage 0.1 100 0.0 0.2 TJ = 150 °C TJ = 25 °C VSD -S ou rce-to-Drain Voltage (V) - Source C urrent (A)I S 1.0 1.3 1.6 1.9 2.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - T emperature (°C) On-Re sistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.01 0.02 0.03 0.04 02 4 6 8 10 TJ = 25 °C TJ = 125 °C - On- Resistance (Ω)RDS(o VGS - G ate-to-Source Voltage (V) 100 0 111 0 0 .00 .01 Time (s) Power (W) 0.1 Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01

0.1 TA = 25 °C

100 µA Limited byR DS(on)* BVDSS Limited 1m s 10 ms 100 ms 10 s DC VDS - Drain -to-Source Voltage (V) * VGS > minim um VGS at which RDS(on) is specified - Drain Current (A)ID DT. www.daysemi.jp

Document Number: 64 732 S09-0314-Rev. A, 02-Mar-09 www.GD\\VHPLMS TYPICAL C HARACTERISTICS 25 °C, unless otherwise noted * Th e power dissipation P D is b a sed on T J(max) = 15 0 ° C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) I D - Drain Current (A) Powe r, Junction-to-Case 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Powe r, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 25 50 75 100 125 150 TA -A mb ient Temperature (°C) Power (W) DT. www.daysemi.jp

www.GD\\VHPLMS Documen t Number: 64732 S09-0314-Rev. A, 02-Mar-09 TYPI CAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized T hermal Transient Impedance, Junction-to-Ambient 0.2 0.1 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 °C/W 3. TJM -T A =P DMZthJA(t) 4. S urface Mounted Duty C ycle = 0.5 Single P ulse 0.02 0.05 10-3 10-2 1 10 100010-110-4 100 Square WaveP ulse D uration (s) Normalized Ef fective Transient Thermal Impedance 0.1 0.01 Nor malized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty C ycle = 0.5 Square WaveP ulse Duration (s) Normalized Ef fective Transient Thermal Impedance 0.1 0.01 0.05 0.02 Single P ulse DT. www.daysemi.jp

Document Number: 71192 11-S ep-06 www.daysemi.jp DIM MILLIMETERS INCHES Min Max Min Max A 1.35 1.7 5 0.053 0.069 A1 0.10 0.20 0.00 4 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S

Package Information

www.daysemi.jp Document Number: 72606

1 Revision: 21-Jan-08

0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Re turn to Index Application Note

www.daysemi.jp Revision: 02-Oct-12 1 Document Number: 72610 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and condit ions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicate d in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The Euro pean Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We co nfirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.