DTM4420B

DTM4420B DINTEK | Alldatasheet

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Technical content

N-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free TrenchFET Power MOSFET  O ptimized for High-Side Synchronous Rectifier Operation  100 % R g Tested  100 % UIS Tested

APPLICATIONS

 Notebook CPU Core - High-Side Switch PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 0.007 at V GS = 10 V 15 6.8 nC0.009 at V GS = 4.5 V 13 SO-8 SD SD SD GD 5 Top View N-Channel MOSFET G D S Notes: a. Base on T C = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS

30 VGate-Source Voltage V

± 20 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D A T C = 70 °C 12 T A = 25 °C 11 b, c T A = 70 °C 9 b, c Pulsed Drain Current I DM Continuous Source-Drain Diode Current T C = 25 °C I S 3.8 T A = 25 °C 2.1 b, c Single Pulse Avalanche Current L = 0.1 mH I AS Avalanche Energy E AS 24 mJ Maximum Power Dissipation T C = 25 °C P D 4.5 WT C = 70 °C 2.8 T A = 25 °C 2.5 b, c T A = 70 °C 1.6 b, c Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum U nit Maximum Junction-to-Ambient b, d t ≤ 10 s R thJA 38 50 °C/WMaximum Junction-to-Foot (Drain) Steady State R thJF 22 28 www.din-tek.jp DTM4420B

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T J = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 µA 30 V V DS Temperature Coefficient ΔV DS J I D = 250 µA 28 mV/°CV GS(th) Temperature Coefficient ΔV GS(th) J - 6 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.2 2.5 V Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 20 V ± 100 n A Zero Gate Voltage Drain Current I DSS V DS = 30 V, V GS = 0 V 1 µAV DS = 30 V, V GS = 0 V, T J = 55 °C 10 On-State Drain Current a I D(on) V DS ≥ 5 V, V GS = 10 V 20 A Drain-Source On-State Resistance a R DS(on) V GS = 10 V, I D = 11 A 0.005 0.007 ΩV GS = 4.5 V, I D = 10 A 0.007 0.009 Forward Transconductance a g fs V DS = 15 V, I D = 11 A 52 S Dynamic b Input Capacitance C iss V DS = 15 V, V GS = 0 V, f = 1 MHz 820 pFOutput Capacitance C oss 195 Reverse Transfer Capacitance C rss Total Gate Charge Q g V DS = 15 V, V GS = 10 V, I D = 11 A 15 23 nCV DS = 15 V, V GS = 5 V, I D = 11 A 6.8 10.2 Gate-Source Charge Q gs 2.5 Gate-Drain Charge Q gd 2.3 Gate Resistance R g f = 1 MHz 0.36 1.8 3.6 Ω Tur n-On Delay Time t d(on) V DD = 15 V, R L = 1.4 Ω I D ≅ 9 A, V GEN = 4.5 V, R g = 1 Ω 16 24 ns Rise Time t r 12 18 Turn-Off Delay Time t d(off) 16 24 Fall Time t f 10 20 Tur n-On Delay Time t d(on) V DD = 15 V, R L = 1.4 Ω I D ≅ 9 A, V GEN = 10 V, R g = 1 Ω 81 6 Rise Time t r 10 20 Turn-Off Delay Time t d(off) 16 24 Fall Time t f 81 5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C 25 A Pulse Diode Forward Current a I SM Body Diode Voltage V SD I S = 9 A 0.8 1.2 V Body Diode Reverse Recovery Time t rr I F = 9 A, dI/dt = 100 A/µs, T J = 25 °C 15 30 ns Body Diode Reverse Recovery Charge Q rr 61 2 n C Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b www.din-tek.jp DTM4420B

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0246 8 10 V GS =1 0t hru 4 V V GS =3 V V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.005 0.007 0.009 0.011 0.013 0.015 0 1 02 03 04 05 0 V GS =4 . 5V V GS =1 0 V - On-Resistance (Ω)R DS(on) I D - Drain Current (A) 04 8 12 16 V DS = 24 V I D = 11 A V DS =1 5 V - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V GS Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature T C = 25 °C T C = 125 °C T C =- 5 5 °C V GS - Gate-to-Source Voltage (V) - Drain Current (A)I D C rss 300 600 900 1200 0 6 12 18 24 30 C iss C oss V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 V GS =4 . 5V V GS =1 0 V I D = 11 A T J -J unction Temperature (°C) (Normalized) - On-ResistanceR DS(on) www.din-tek.jp DTM4420B

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.01 0.001 0.1 100 T J = 150 °C T J = 25 °C V SD -S ource-to-Drain Voltage (V) - Source Current (A)I S 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 I D = 250 µA (V)V GS(th) T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0246 8 10 T J =2 5 °C T J = 125 °C - On-Resistance (Ω)R DS(on) V GS - Gate-to-Source Voltage (V) Power (W) Time (s) 1 100 6001010 Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 T A =2 5 °C Single Pulse 100 µA 10 s Limited byR DS(on) BVDSS Limited 1m s 10 ms 100 ms DC V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified - Drain Current (A)I D www.din-tek.jp DTM4420B

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is based on T J(max) = 150 °C , using junctio n-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 T C - Case Temperature (°C) I D - Drain Current (A) Power Derating, Junction-to-Foot 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) Power Derating, Junction-to-Ambient 0.0 0.5 1.0 1.5 2.0 0 25 50 75 100 125 150 T A -A mbient Temperature (°C) Power (W) www.din-tek.jp DTM4420B

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 1 10 60010 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 70 °C/W 3. T JM - T A = P DM Z th J A (t ) t t t t Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Junction-to-Foot 11 010 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance www.din-tek.jp DTM4420B

A 1.35 1.7 5 0.053 0.069 A1 0.10 0.2 0 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S

Package Information

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R ECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 0.050 (1.270) 0.022 (0.559) Return to Index R eturn to Index Application Note www.din-tek.jp

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