DTM4015

DTM4015 DINTEK | Alldatasheet

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Technical content

P-Channel 40 V (D-S) MOSFET

FEATURES

1 0 0 % Rg and UIS Tested

APPLICATIONS

 Adaptor Switch  Load Switch  Power Management  Mobile Computing Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady stat e conditions is 81 °C/W. d. Package limited. PRODUCT SUMMARY VDS (V) R DS(on) () Max. I D (A) Q g (Typ.) - 40 0.0094 at VGS = - 10 V - 18d 35.4 nC 0.0132 at VGS = - 4.5 V - 15d S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 40 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 18d A TC = 70 °C - 15d TA = 25 °C - 14.7a, b TA = 70 °C - 11.7a, b Pulsed Drain Current (t = 300 µs) IDM - 70 Continuous Source-Drain Diode Current TC = 25 °C IS - 18d TA = 25 °C - 3a, b Avalanche Current L = 0.1 mH IAS - 20 Single-Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD WTC = 70 °C 33 TA = 25 °C 3.7a, b TA = 70 °C 2.4a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)e, f 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum U nit Maximum Junction-to-Ambienta, c t 10 s RthJA 26 33 °C/WMaximum Junction-to-Case Steady State RthJC 1.9 2.4 www.din-tek.jp DTM4 S S D D D S G D SO-8 Top View

a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Param eter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 40 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 23 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ 4.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V - 1 µAVDS = - 40 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS  - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 50 S Dynami cb Input Capacitan ce Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 428 pFOutput Capacitance Coss 427 Reverse T ransfer Capacitance Crss 382 Total Gate Charge Qg VDS = - 15 V , VGS = - 10 V, ID = - 10 A 73 110 nCVDS = - 15 V, VGS = - 4 .5 V, ID = - 10 A 35.4 Gate-Source Charge Qgs 10.6 Gate-Dra in Charge Qgd 11.6 Gate Re sistance Rg f = 1 MHz 0.4 1.6 3.2  Tu r n-On Delay Time td(on) VDD = - 15 V , RL = 1.5  ID  - 10 A, VGEN = - 10 V, Rg = 1  ns Rise Time tr 11 22 Tur n-Off DelayTime td(off) 45 90 Fal l Time tf 81 6 Tur n-On Delay Time td(on) VDD = - 15 V , RL = 1.5  ID  - 10 A, VGEN = - 4.5 V, Rg = 1  55 100 Rise Time tr 82 150 Tur n-Off DelayTime td(off) 40 80 Fal l Time tf 13 26 Drain-So urce Body Diode Characteristics Continous Source-Drain Diode Current I S TC = 25 °C -

18 APulse Diode Forward Current ISM - 70

Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.74 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/ dt = 100 A/µs, TJ = 25 18 36 ns Body Diode Re verse Recovery Charge Q rr 81 6 n C Reverse Recovery Fall Time ta 7 nsReverse Reco very Rise Time tb 11 www.din-tek.jp DTM4

HARACTERISTICS (25 °C, unless otherwise noted) Output Char acteristics On-Resistance vs. Drain Current Gate Charge 100 0.0 0.5 1.0 1.5 2.0 2.5 ID - Drain Current (A) VDS - D rain-to-Source Voltage (V) VGS = 2 V VGS = 3 V VGS =

10 V thru 4 V

0.0000 0.0040 0.0080 0.0120 0.0160 0.0200 0 16 32 48 64 80 RDS(on ) - On- Resistance (Ω) ID - D rain Current (A) VGS = 4.5 V VGS = 10 V 0 15 30 45 60 75 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 1 0 V VDS = 2 0 V VDS = 1 5 V ID = 10 A Transfer Ch aracteristics Capacitance On-Resistance vs. Junction Temperature 0.0 1.0 2.0 3.0 4.0 5.0 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 TC = 125 °C TC = - 55 1200 2400 3600 4800 6000 0 4 8 12 16 20 C - Capacitance (pF) VDS - Drain- to-Source Voltage (V) Ciss Coss Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 RDS(on ) - On -Resistance (Normalized) TJ - Juncti on Temperature (°C) ID = 10 A VGS = 10 V VGS = 4.5 V www.din-tek.jp DTM4

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Sour ce-Drain Diode Forward Voltage Threshold Voltage 0.001 0.01 0.1 100 0.0 0.2 IS - Source Current (A) VSD - S ource-to-Drain Voltage (V) TJ = 150 °C TJ = 25 - 0. - 0.2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 VGS( th) Va riance (V) TJ - Tem perature (°C) ID = 250 μA ID = 1 mA On-Resistance vs. Gate-to-So urce Voltage Single Pulse Power, Junction-to-Ambient 0.010 0.020 0.030 0.040 0.050 0 2 4 6 8 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 ID = 15 A 100 0.001 0.01 0.1 1 10 Po wer (W) Time (s) Safe Operatin g Area 0.01 0.1 100 0.01 0.1 1 10 100 ID - Drain Current (A) VDS - Drain- to-Source Voltage (V) * VGS > mi nimum VGS at which RDS(on ) is specified 100 μs 100 ms Limited by RDS(on 1 ms IDM Limited TA = 25 °C Sin gle Pulse BVDSS L imited 10 ms 10 s 1 s DC ID Limited www.din-tek.jp DTM4

T TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) The power dissipation P D is based on T J( max.) = 15 0 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dis sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derati ng* 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Li mited by Package Pow er, Junction-to-Case 2 55 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) Power (W) Pow er, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) www.din-tek.jp DTM4

PICAL CHARACTERISTICS (25 °C, unless otherwise noted) Norm alized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 No rmalized Effective Transient Thermal Impedance Sq uare Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 S ingle Pulse Notes: PDM Duty Cycle, D = 2. Per Unit Base = RthJ A = 81 °C/W 3. TJM - TA =P DMZthJ A(t) Surface Mounted No rmalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Normalized E ffective Transient Thermal Impedance Sq uare Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Sing le Pulse www.din-tek.jp DTM4

A 1.35 1.7 5 0.053 0.069 A1 0.10 0.2 0 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S

Package Information

www.din-tek.jp

0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Application Note www.din-tek.jp

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