DTL9604

DTL9604_13 DINTEK | Alldatasheet

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Technical content

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET Power MOSFET  100 % R g and UIS Tested L o w Q g for High Efficiency

APPLICATIONS

 POL  Synchronous Rectifier  DC/DC Converter  Amusement System  Industrial  LED Backlighting Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. PRODUCT SUMMARY V DS (V) R DS(on) ()I D (A) a Q g (Typ.) 0.0022 at V GS = 10 V 55 27.5 nC0.0025 at V GS = 6 V 55 0.0028 at V GS = 4.5 V 50 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS

60 VGate-Source Voltage V

± 20 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D a A T C = 70 °C 55 a T A = 25 °C 35.8 b, c T A = 70 °C 28.6 b, c Pulsed Drain Current (60 µs Pulse Width) I DM 350 Continuous Source-Drain Diode Current T C = 25 °C I S a T A = 25 °C 5.6 b, c Single Pulse Avalanche Current L =0.1 mH I AS Single Pulse Avalanche Energy E AS 80 mJ Maximum Power Dissipation T C = 25 °C P D 104 WT C = 70 °C 66.6 T A = 25 °C 6.25 b, c T A = 70 °C 4 b, c Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °CSoldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Un it Maximum Junction-to-Ambient t  10 s R thJA 15 20 °C/WMaximum Junction-to-Case (Drain) Steady State R thJC 0.9 1.2 T O-220AB Top View GDS www.din-tek.jp DTL9604

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (T J = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 µA 60 V V GS(th) Temperature Coefficient V GS(th) J I D = 250 µA - 6 mV/°C Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1 2.5 V Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current I DSS V DS = 60 V, V GS = 0 V 1 µAV DS = 60 V, V GS = 0 V, T J = 55 °C 10 On-State Drain Current a I D(on) V DS 5 V, V GS = 10 V 30 A Drain-Source On-State Resistance a R DS(on) V GS = 10 V, I D = 20 A 0.0018 0.0022 GS = 6 V, I D = 20 A 0.0023 0.0025 V GS = 4.5 V, I D = 20 A 0.0025 0.0028 Forward Transconductance a g fs V DS = 15 V, I D = 20 A 82 S Dynamic b Input Capacitance C iss V DS = 30 V, V GS = 0 V, f = 1 MHz 4365 pFOutput Capacitance C oss 3270 Reverse Transfer Capacitance C rss 177 Total Gate Charge Q g V DS = 30 V, V GS = 10 V, I D = 20 A 63.5 9 6 nCV DS = 30 V, V GS = 4.5 V, I D = 20 A 27.5 42 Gate-Source Charge Q gs Gate-Drain Charge Q gd 5.9 Gate Resistance R g f = 1 MHz 0.4 1.2 2.4  Tur n-On Delay Time t d(on) V DD = 30 V, R L = 3  I D  10 A, V GEN = 10 V, R g = 1  14 28 ns Rise Time t r 11 22 Turn-Off Delay Time t d(off) 33 60 Fall Time t f 11 22 Turn-On Delay Time t d(on) V DD = 30 V, R L = 3  I D  10 A, V GEN = 4.5 V, R g = 1  47 90 Rise Time t r 97 180 Turn-Off Delay Time t d(off) 32 60 Fall Time t f 13 26 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C 60 APulse Diode Forward Current a I SM 100 Body Diode Voltage V SD I S = 5 A 0.73 1.1 V Body Diode Reverse Recovery Time t rr I F = 10 A, dI/dt = 100 A/µs, T J = 25 °C 79 120 ns Body Diode Reverse Recovery Charge Q rr 88 135 nC Reverse Recovery Fall Time t a 32 nsReverse Recovery Rise Time t b www.din-tek.jp DTL9604

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 100 I D - Drain Current (A) V DS - Drain-to-Source Voltage (V) V GS = 2 V V GS = 10 V thru 4 V V GS = 3 V 0.0000 0.0010 0.0020 0.0030 0.0040 0.0050 0 20 40 60 80 100 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) V GS = 4.5 V V GS = 10 V 0 13 26 39 52 65 V GS - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V DS = 30 V V DS = 40 V V DS = 20 V I D = 20 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 100 I D - Drain Current (A) V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 1400 2800 4200 5600 7000 0 12 24 36 48 60 C - Capacitance (pF) V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 R DS(on) - On-Resistance (Normalized) T J - Junction Temperature (°C) I D = 20 A V GS = 10 V V GS = 4.5 V www.din-tek.jp DTL9604

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.001 0.01 0.1 100 I S - Source Current (A) V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 V GS(th) - Variance (V) T J - Temperature (°C) I D = 250 μA I D = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.003 0.006 0.009 0.012 0.015 0 2 4 6 8 10 R DS(on) - On-Resistance (Ω) V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 20 A 120 160 200 0.001 0.01 0.1 1 10 Power (W) Time (s) Safe Operating Area, Junction-to-Ambient 0.01 0.1 100 0.01 0.1 1 10 100 I D - Drain Current (A) V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified 100 ms Limited by R DS(on) 1 ms I DM Limited T A = 25 °C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC I D Limited www.din-tek.jp DTL9604

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is ba sed on T J(max.) = 15 0 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 128 160 0 25 50 75 100 125 150 I D - Drain Current (A) T C - Case Temperature (°C) Package Limited Power, Junction-to-Case 100 125 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) Power, Junction-to-Ambient 0.0 0.6 1.2 1.8 2.4 3.0 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power (W) www.din-tek.jp DTL9604

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse t t Notes: P DM 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 54 °C/W 3. T JM A DM Z thJA(t) t t 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse www.din-tek.jp DTL9604

s * M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCH ES A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471

Package Information

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