DTL4N60

DTP4N60_13 DINTEK | Alldatasheet

Document overview

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Technical content

FEATURES

• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V, V GS Rating
• Reduced C iss , C oss , C rss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 25 °C, L = 25 mH, R g = 25 , I AS = 6.2 A (see fig. 12). c. I SD  6.2 A, dI/dt  80 A/μs, V DD  V DS , T J  150 °C. d. 1.6 mm from case. PRODUCT SUMMARY V DS (V) 600 R DS(on) ()V GS = 10 V 2.2 Q g (Max.) (nC) 39 Q gs (nC) 10 Q gd (nC) 19 Configuration Single N-Channel MOSFET G D S Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS

600 V Gate-Source Voltage V

± 30 Continuous Drain Current V GS at 10 V T C = 25 °C I D AT C = 100 °C 2.9 Pulsed Drain Current a I DM Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energy b E AS 530 mJ Repetitive Avalanche Current a I AR 6.2 A Repetitive Avalanche Energy a E AR 13 mJ Maximum Power Dissipation T C = 25 °C P D 125 W Peak Diode Recovery dV/dt c dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300 d Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

• Pb containing terminations are not RoHS compliant, exemptions may apply T O-220AB Top View GDS SDG TO-220 FULLPAK TO-252 S GD Top View TO-251 SDG Top View Top View DTP4N60DTP4N60FDTU4N60DTL4N60 www.din-tek.jp DTP4N60/DTP4N60F/DTU4N60/DTL4N60

a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R thJA -6 2 °C/WCase-to-Sink, Flat, Greased Surface R thCS 0.50 - Maximum Junction-to-Case (Drain) R thJC -1 .0 SPECIFICATIONS (T J = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 μA 600 - - V V DS Temperature Coefficient V DS J Reference to 25 °C, I D Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 μA 2.0 - 4.0 V Gate-Source Leakage I GSS V GS Zero Gate Voltage Drain Current I DSS V DS = 600 V, V GS = 0 V - - 100 μA V DS = 480 V, V GS = 0 V, T J = 125 °C - - 500 Drain-Source On-State Resistance R DS(on) V GS = 10 V I D = 3.7 A b -- 2 . 2  Forward Transconductance g fs V DS = 100 V, I D = 3.7 A b 3.7 - - S Dynamic Input Capacitance C iss V GS = 0 V V DS = 25 V f = 1.0 MHz, see fig. 5 - 1100 - pFOutput Capacitance C oss - 140 - Reverse Transfer Capacitance C rss -1 5- Total Gate Charge Q g V GS = 10 V I D = 4 A, V DS = 360 V, see fig. 6 and 13 b -- 3 9 nC Gate-Source Charge Q gs -- 1 0 Gate-Drain Charge Q gd -- 1 9 Turn-On Delay Time t d(on) V DD = 300 V, I D = 4 A R g = 9.1 , R D = 47, see fig. 10 b -1 2- ns Rise Time t r -2 0- Turn-Off Delay Time t d(off) -2 7 - Fall Time t f -1 7- Internal Drain Inductance L D Between lead, 6 mm (0.25") from package and center of die contact -4 . 5- nH Internal Source Inductance L S -7 . 5- Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode -- 4 . 0 A Pulsed Diode Forward Current a I SM -- 2 5 Body Diode Voltage V SD T J = 25 °C, I S = 4 A, V GS = 0 V b -- 1 . 5 V Body Diode Reverse Recovery Time t rr T J = 25 °C, I F = 4 A, dI/dt = 100 A/μs b - 440 680 ns Body Diode Reverse Recovery Charge Q rr -2 . 1 3 . 2 μ C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D D S G S D G www.din-tek.jp DTP4N60/DTP4N60F/DTU4N60/DTL4N60

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 91114_01 Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 25 °C 4.5 V V DS , Drain-to-Source Voltage (V) I D , Drain Current (A) V DS, Drain-to-Source Voltage (V) I D , Drain Current (A) Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 150 °C 91114_02 4.5 V 20 µs Pulse Width V DS = 100 V I D , Drain Current (A) V GS, Gate-to-Source Voltage (V) 5678 9 1 04 C 150 C 91114_03 I D = 4 A V GS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0 2.5 T Junction Temperature (°C) R DS(on) , Drain-to-Source On Resistance (Normalized) 91114_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 3.5 www.din-tek.jp DTP4N60/DTP4N60F/DTU4N60/DTL4N60

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 2400 2000 1600 1200 400 800 Capacitance (pF) V DS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = C gs + C gd , C ds Shorted C rss = C gd C oss = C ds + C gd 91114_05 Q G , Total Gate Charge (nC) V GS , Gate-to-Source Voltage (V) 0 8 40322416 V DS = 180 V V DS = 240 V For test circuit see figure 13 V DS = 300 V 91114_06 I D = 3.2 A V SD , Source-to-Drain Voltage (V) I SD , Reverse Drain Current (A) C 150 C V GS = 0 V 91114_07 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) V DS , Drain-to-Source Voltage (V) I D , Drain Current (A) T C = 25 °C T J = 150 °C Single Pulse10 0.1 0.1 2 25 3 25 91114_08 www.din-tek.jp DTP4N60/DTP4N60F/DTU4N60/DTL4N60

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case I D , Drain Current (A) T C , Case Temperature (°C) 0.0 2.5 3.0 3.5 4.0 5.0 25 1501251007550 91114_09 1.0 2.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % R D V GS R g D.U.T. 10 V V DS V DD V DS 90 % 10 % V GS t d(on) t r t d(off) t f 0.1 0.1 1 10 P DM t t t , Rectangular Pulse Duration (s) Thermal Response (Z thJC Notes: 1. Duty Factor, D = t 2. Peak T j = P DM x Z thJC + T C Single Pulse (Thermal Response) 0 − 0.5 0.2 0.1 0.05 0.02 0.01 91114_11 www.din-tek.jp DTP4N60/DTP4N60F/DTU4N60/DTL4N60

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit R g I AS 0.01 Ω t p D.U.T. L V DS - V DD 10 V Vary t p to obtain required I AS I AS V DS V DD V DS t p 1200 200 400 600 800 1000 25 1501251007550 Starting T J , Junction Temperature (°C) E AS , Single Pulse Energy (mJ) Bottom Top I D 1.8 A 2.9 A 4 A V DD = 50 V 91114_12c Q GS Q GD Q G V G Charge 10 V D.U.T. 3 mA V GS V DS I G I D 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. www.din-tek.jp DTP4N60/DTP4N60F/DTU4N60/DTL4N60

• M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM M L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471

Package Information

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TO-220 FULLPAK (HIGH VOLTAGE) Notes 1. To be used only for process drawing. 2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All dimensions include burrs and plating thickness. 5. No chipping or package damage. E b n L e Ø P D c u V A MILLIMETERS INCHES A 4.570 4.830 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 www.din-tek.jp

• Dimension L3 is for reference only. D b C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347

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Note: Dimension L3 is for reference only. b e L D c A E /C0084/C0079/C0262/C0050/C0053/C0049/C0065/C0065/C0032/C0040/C0068/C0080/C0065/C0075/C0041 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083 /C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e

2.28 BSC

0.090 BSC

L 8.89 9.53 0.350 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 www.GD\\VHPLMS www.din-tek.jp

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